Related papers: All-optical band engineering of gapped Dirac mater…
We demonstrated theoretically that the renormalization of the electron energy spectrum near the Dirac point of graphene by a strong high-frequency electromagnetic field (dressing field) drastically depends on polarization of the field.…
We study low-frequency linearly-polarized laser-dressing in materials with valley (graphene and hexagonal-Boron-Nitride), and topological (Dirac- and Weyl-semimetals), properties. In Dirac-like linearly-dispersing bands, the laser…
We propose a scheme to trap and filter electrons, valley dependently, on a scale beyond the diffraction limit, in a gapped Dirac system using a circularly polarized light beam and a microscale metallic resonator. The main mechanism allowing…
The subject of the present paper is a detailed theoretical investigation of the energy spectrum and bandgaps, as well as topological and collective properties and linear response, in $d$-wave altermagnets in the presence of an off-resonance…
We investigate the optical response of the silicene and similar materials, such as germanene, in the presence of an electrically tunable band gap for variable doping. The interplay of spin orbit coupling, due to the buckled structure of…
We study the optical properties of semiconducting transition metal dichalcogenide monolayers under the influence of strong out-of-plane magnetic fields, using the effective massive Dirac model. We pay attention to the role of spin-orbit…
We suggest the tried approach of impurity band engineering to produce flat bands and additional nodes in Dirac materials. We show that surface impurities give rise to nearly flat impurity bands close to the Dirac point. The hybridization of…
We develop a theory of optical transitions in Coulomb impurity-doped two-dimensional transition metal dichalcogenide monolayers and study the transitions from the spin-resolved valence band to the (Coulomb) donor and acceptor impurities…
We study theoretically the effect of spin-orbit coupling and sublattice asymmetry in graphene on the spin polarization of photoelectrons. We show that sublattice asymmetry in graphene not only opens a gap in the band structure but in case…
Electromagnetic dressing by a high-frequency field drastically modifies the electronic transport properties on Dirac systems. Here its effects on the energy spectrum of graphene with two possible phases of Kekul\'e distortion (namely, Kek-Y…
It is shown theoretically that the renormalization of the electron energy spectrum of bilayer graphene with a strong high-frequency electromagnetic field (dressing field) results in the Lifshitz transition - the abrupt change in the…
We analyze mass renormalization in massive Dirac-like systems in (2+1) dimensions arising from electron-phonon interactions at finite temperatures, employing the large-$N$ expansion. Our model combines the low-energy description of charge…
The manipulation and movement of Dirac points in the Brillouin zone by the electron-electron interaction is considered within leading order perturbation theory. At the merging point, an infinitesimal interaction is shown to cause opening of…
Electronic properties of the graphene layer sandwiched between two hexagonal boron nitride sheets have been studied using the first-principles calculations and the minimal tight-binding model. It is shown that for the ABC-stacked structure…
We analyze the energy spectrum of graphene in the presence of spin-orbit coupling and a unidirectionally periodic Zeeman field, focusing on the stability and location of Dirac points it may support. It is found that the Dirac points at the…
We analyze the valley selection rules for optical transitions from impurity states to the conduction band in two-dimensional Dirac materials, taking a monolayer of MoS2 as an example. We employ the analytical model of a shallow impurity…
Strongly coupling materials to cavity fields can affect their electronic properties altering the phases of matter. We study the monolayer graphene whose electrons are coupled to both left and right circularly polarized photons, and…
We study the effect of strain on the band engineering in gapped graphene subject to external sources. By applying the Floquet theory, we determine the effective Hamiltonian of electron dressed by a linearly, circularly and an elliptically…
Electronic analogue of generalized Goos-H\"{a}nchen shifts is investigated in the monolayer graphene superlattice with one-dimensional periodic potentials of square barriers. It is found that the lateral shifts for the electron beam…
We report calculations of the electronic structure of silicene and the stability of its weakly buckled honeycomb lattice in an external electric field oriented perpendicular to the monolayer of Si atoms. We find that the electric field…