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Materials which can undergo slow diffusive transformations as well as fast displacive transformations are studied using the phase-field method. The model captures the essential features of the time-temperature-transformation (TTT) diagrams,…

Materials Science · Physics 2007-05-23 Mathieu Bouville , Rajeev Ahluwalia

We analyze deep inelastic scattering at small Bjorken x, using the approximate conformal invariance of QCD at high energies. Hard pomeron exchanges are resummed eikonally, restoring unitarity at large values of the phase shift in the dual…

High Energy Physics - Phenomenology · Physics 2009-03-19 Lorenzo Cornalba , Miguel S. Costa

The electronic and structural properties of atomically thin materials can be controllably tuned by assembling them with an interlayer twist. During this process, constituent layers spontaneously rearrange themselves in search of a lowest…

We present a theoretical model of split-gate quantum wires that are fabricated from GaAs-AlGaAs heterostructures. The model is built on the physical properties of donors and of semiconductor surfaces, and considerations of equilibrium in…

Condensed Matter · Physics 2009-10-28 Yinlong Sun , George Kirczenow , Andrew. S. Sachrajda , Yan Feng

We first report a detailed transmission electron microscopy study of dislocation networks (DNs) formed at shallowly buried interfaces obtained by bonding two GaAs crystals between which we establish in a controlled manner a twist and a tilt…

Selective optical excitation of a substrate lattice can drive phase changes across hetero-interfaces. This phenomenon is a non-equilibrium analogue of static strain control in heterostructures and may lead to new applications in optically…

Quantum Dots are very attractive nanostructures from an application point of view due to their unique optical properties. Optical properties and Valence Band states character was numerically investigated from the effect of nanostructure…

Mesoscale and Nanoscale Physics · Physics 2023-07-18 M. Lazarev

Interesting emergent behavior in quantum materials arises when the interaction of electrons with the lattice leads to partial localization and ordering of charge at low temperatures. The triangular lattice of some transition metal…

Strongly Correlated Electrons · Physics 2023-01-16 E. S. Bozin , M. Abeykoon , S. Conradson , G. Baldinozzi , P. Sutar , D. Mihailovic

The formation of dislocation-free three-dimensional islands during the heteroepitaxial growth of lattice-mismatched materials has been observed experimentally for several material systems. The equilibrium shape of the islands is governed by…

Materials Science · Physics 2008-02-03 E. Pehlke , N. Moll , M. Scheffler

We provide a formulation of generalised vector dominance (GVD) for low-x deep-inelastic scattering that explicitly incorporates the ${\gamma}^{\ast} \to q{\bar q}$ transition and a QCD-inspired ansatz for the $(q{\bar q})p$…

High Energy Physics - Phenomenology · Physics 2011-09-13 G. Cvetic , D. Schildknecht , A. Shoshi

The high lattice mismatched SiC/Si(001) interface was investigated by means of combined classical and ab initio molecular dynamics. Among the several configurations analyzed, a dislocation network pinned at the interface was found to be the…

Materials Science · Physics 2007-09-12 Giancarlo Cicero , Laurent Pizzagalli , Alessandra Catellani

Geometric phase analysis (GPA) is a widely used technique for extracting displacement and strain fields from scanning probe images. Here, we demonstrate that GPA should be implemented with caution when several fundamental lattices…

Mesoscale and Nanoscale Physics · Physics 2024-05-16 Árpád Pásztor , Ishita Pushkarna , Christoph Renner

We demonstrate insights into the three-dimensional structure of defects in graphene, in particular grain boundaries, obtained via a new approach from two transmission electron microscopy images recorded at different angles. The structure is…

We present a study on the influence of strain-relieving InAlAs buffer layers on metamorphic InAs/InGaAs quantum wells grown by molecular beam epitaxy on GaAs. Residual strain in the buffer layer, the InGaAs barrier and the InAs wells were…

Materials Science · Physics 2022-07-12 A. Benali , P. Rajak , R. Ciancio , J. R. Plaisier , S. Heun , G. Biasiol

Van der Waals heteroepitaxy allows deterministic control over lattice mismatch or azimuthal orientation between atomic layers to produce long wavelength superlattices. The resulting electronic phases depend critically on the superlattice…

Anisotropic lattice deformation plays an important role in the quantum mechanics of solid state physics. The possibility of mediating the competition and cooperation among different order parameters by applying in situ strain/stress on…

Materials Science · Physics 2024-05-30 Han Zhang , Joshua J. Sanchez , Jiun-Haw Chu , Jian Liu

We report on the optical spectroscopy of a single InAs/GaAs quantum dot (QD) doped with a single Mn atom in a longitudinal magnetic field of a few Tesla. Our findings show that the Mn impurity is a neutral acceptor state A^0 whose effective…

Materials Science · Physics 2009-11-13 A. Kudelski , A. Lemaître , A. Miard , P. Voisin , T. C. M. Graham , R. J. Warburton , O. Krebs

Optical properties of heterostructures composed of layered 2D materials, such as transition metal dichalcogenides (TMDs) and graphene, are broadly explored. Of particular interest are light-induced energy transfer mechanisms in these…

Materials Science · Physics 2024-09-17 Amir Kleiner , Daniel Hernangómez-Pérez , Sivan Refaely-Abramson

Electron quantum path interferences in strongly laser-driven aligned molecules and their dependence on the molecular alignment is an essential open problem in strong-field molecular physics. Here, we demonstrate an approach which provides…

Strain heterogeneity at the microstructural level plays a vital role in the deformation and fracture behaviour of dual or multi-phase materials. In the present work, the strain heterogeneity, localization and partitioning arising at the…