Related papers: Nano patterns self-aligned to Ga dimer rows on GaA…
Illumination of colloid sphere monolayers by circularly polarized beams enables the fabrication of concave patterns consisting of circular nanohole miniarrays that can be transferred into convex metal nanoparticle patterns via a lift-off…
We present a model for the interplay between the fundamental phenomena responsible for the formation of nanostructures by metalorganic vapour phase epitaxy on patterned (001)/(111)B GaAs substrates. Experiments have demonstrated that…
The core-level and valence band electronic structure of the well-defined near-surface layer of n-GaAs (100) has been studied by synchrotron-based high-resolution photoelectron spectroscopy before and after modification of the layer by an…
Radiation-tolerant semiconductors have traditionally been engineered by the principle of suppressing defect accumulation and amorphization, based on the assumption that radiation damage is inherently stochastic. Here we show that, in…
We report a new approach for progressive and well-controlled downsizing of nanostructures below the 10 nm scale. Low energetic ion beam (Ar+) is used for gentle surface erosion, progressively shrinking the dimensions with ~ 1 nm accuracy.…
An ion beam based dry etching method has been developed for progressive reduction of dimensions of prefabricated nanostructures. The method has been successfully applied to aluminum nanowires and aluminum single electron transistors (SET).…
We propose a new class of semiconducting graphene-based nanostructures: hydrogenated graphene nanoripples (HGNRs), based on continuum-mechanics analysis and first principles calculations. They are formed via a two-step combinatorial…
Employing graphites having distinctly different mean grain sizes, we study the effects of polycrystallinity on the pattern formation by ion-beam-sputtering. The grains influence the growth of the ripples in highly anisotropic fashion; Both…
We present the first experimental demonstration of zero backscattering from nanoparticles at op- tical frequencies as originally discussed by Kerker et. al. [M. Kerker, D. Wang, and C. Giles, J. Opt. Soc. A 73, 765 (1983)]. GaAs pillars…
The peculiarities of electric current in high-resistance materials, such as semiconductors or semimetals, irradiated by ion beams are considered. It is shown that after ion--beam irradiation an unusual electric current may arise directed…
A novel approach to the fabrication of GaNxAs1-x quantum dots and wires via ion beam patterning is presented. Photomodulated reflectance spectra confirm that N can be released from the As sublattice of an MBE-grown GaNxAs1-x film by…
Atomic Force Microscopy and Grazing incidence X-ray diffraction measurements have revealed the presence of ripples aligned along the $[1\bar{1}0]$ direction on the surface of (Ga,Mn)As layers grown on GaAs(001) substrates and buffer layers,…
We theoretically demonstrate negative refraction and sub-wavelength resolution below the diffraction limit in the UV and extreme UV ranges using semiconductors. The metal-like re-sponse of typical semiconductors such as GaAs or GaP makes it…
Focused ion beam milling allows manipulation of the shape and size of nanostructures to create geometries potentially useful for opto-electronics, thermoelectrics, and quantum computing. We focus on using the ion beam to control the…
The reshaping of amorphous SiOx nanowires (a-SiOx NWs) as purely induced by uniform electron beam (e-beam) irradiation was in-situ studied at room temperature in transmission electron microscope. It was observed that the axially straight NW…
A new scheme for the two-dimensional cooling of ion beams in storage rings is suggested in which ions interact with a counterpropagating broad-band laser beam. The interaction region in the direction of the ion movement is much less then…
We account for lateral orderings of III-V nanostructures resulting from a GaAs/InAs/InGaAs/GaAs sequence grown on GaAs by metallorganic vapour phase epitaxy at two different temperatures. For both samples, the ordering is induced by the…
Nanoprobe X-ray diffraction (nXRD) using focused synchrotron radiation is a powerful technique to study the structural properties of individual semiconductor nanowires. However, when performing the experiment under ambient conditions, the…
Superconducting devices are prone to reduced performance caused by impurities and defects along the edges of their wires, which can lead to local current crowding. In this study, we explored the use of helium ion irradiation to modify the…
Controlling light emission from quantum emitters has important applications ranging from solid-state lighting and displays to nanoscale single-photon sources. Optical antennas have emerged as promising tools to achieve such control right at…