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Introducing an isolated intermediate band (IB) into a wide band gap semiconductor can potentially improve the optical absorption of the material beyond the Shockley-Queisser limitation for solar cells. Here, we present a systematic study of…

Materials Science · Physics 2018-05-24 Tingting Wang , Xiaoguang Li , Wenjie Li , Li Huang , Ya Cheng , Jun Cui , Hailin Luo , Guohua Zhong

When the sulfur element is hyperdoped into crystalline silicon to a supersaturated density of 1020 cm-3, it can enhance the sub-bandgap light absorption of silicon from 0 to 70%, with the antireflection of surface dome structures. On the…

Materials Science · Physics 2015-06-19 Ke-Fan Wang , Shengchun Qu , Yuanxu Wang , Zhanguo Wang

We show that new silicon crystalline phases, observed in the experiment with the laser-induced microexplosions inside silicon crystals (Rapp et al. // Nat. Commun. 6, 7555 (2015)), are all superstructures of a disordered high-symmetry phase…

Soft Condensed Matter · Physics 2020-06-15 Vladimir E. Dmitrienko , Viacheslav A. Chizhikov

Silicon materials play a key role in many technologically relevant fields, ranging from the electronic to the photovoltaic industry. A systematic search for silicon allotropes was performed by employing a modified ab initio minima hopping…

Diamond silicon (Si) is the leading material in current solar cell market. However, diamond Si is an indirect band gap semiconductor with a large energy difference (2.4 eV) between the direct gap and the indirect gap, which makes it an…

Materials Science · Physics 2013-03-18 H. J. Xiang , Bing Huang , Erjun Kan , Su-Huai Wei , X. G. Gong

With few systems of technological interest having been studied as extensively as elemental silicon, there currently exists a wide disparity between the number of predicted low-energy silicon polymorphs and those, which have been…

Materials Science · Physics 2017-11-08 Eric Jones , Vladan Stevanovic

Silicon is the most popular material used in electronic devices. However, its poor optical properties owing to its indirect band gap nature limit its usage in optoelectronic devices. Here we present the discovery of super-stable…

Materials Science · Physics 2015-04-17 Young Jun Oh , In-Ho Lee , Sunghyun Kim , Jooyoung Lee , K. J. Chang

Hyperdoping has emerged as a promising method for designing semiconductors with unique optical and electronic properties, although such properties currently lack a clear microscopic explanation. Combining computational and experimental…

We study the nature of the electronic states in the intermediate band formed by interstitial titanium in silicon. Our single-site description combines effects of electronic correlations, captured by dynamical mean-field theory, and…

Strongly Correlated Electrons · Physics 2021-11-17 A. Östlin , L. Chioncel

In the framework of the two-band model of a doped semiconductor the self-consistent equations describing the transition into the excitonic insulator state are obtained for the 2D case. It is found that due to the exciton-electron…

Condensed Matter · Physics 2009-10-22 Michael N. Kiselev

Topological phases usually are unreachable in molecular solids, which are characteristic of weakly dispersed energy bands with a large gap, in contrast to topological materials. In this work, however, we propose that nontrivial electronic…

Materials Science · Physics 2022-12-16 Tonghua Yu , Ryotaro Arita , Motoaki Hirayama

We observe an insulator-to-metal (I-M) transition in crystalline silicon doped with sulfur to non- equilibrium concentrations using ion implantation followed by pulsed laser melting and rapid resolidification. This I-M transition is due to…

Materials Science · Physics 2015-05-27 Mark T. Winkler , Daniel Recht , Meng-Ju Sher , Aurore J. Said , Eric Mazur , Michael J. Aziz

A key to understand how electrons behave in crystalline solids is the band structure that connects the energy of electron waves to their wavenumber (k). Even in the phase of matter with only short-range order (liquid or amorphous solid),…

Strongly Correlated Electrons · Physics 2025-07-11 Sae Hee Ryu , Minjae Huh , Do Yun Park , Chris Jozwiak , Eli Rotenberg , Aaron Bostwick , Keun Su Kim

Silicene, the two-dimensional allotrope of silicon, is predicted to exist in a low-buckled honeycomb lattice, characterized by semimetallic electronic bands with graphenelike energy-momentum dispersions around the Fermi level (represented…

Materials Science · Physics 2018-01-10 A. Sindona , A. Cupolillo , F. Alessandro , M. Pisarra , D. C. Coello Fiallos , S. M. Osman , L. S. Caputi

Restructuring of electronic spectrum in a buckled silicene monolayer under some applied voltage between its two sublattices and in presence of certain impurity atoms is considered. A special attention is given to formation of localized…

Disordered Systems and Neural Networks · Physics 2016-01-20 Yuriy G. Pogorelov , Vadim M. Loktev

Photo-excited quantum materials can be driven into thermally inaccessible metastable states that exhibit structural, charge, spin, topological and superconducting orders. Metastable states typically emerge on timescales set by the intrinsic…

Strongly Correlated Electrons · Physics 2025-07-24 Xinwei Li , Iliya Esin , Youngjoon Han , Yincheng Liu , Hengdi Zhao , Honglie Ning , Cora Barrett , Jun-Yi Shan , Kyle Seyler , Gang Cao , Gil Refael , David Hsieh

Molecular electronics on silicon has distinct advantages over its metallic counterpart. We describe a theoretical formalism for transport through semiconductor-molecule heterostructures, combining a semi-empirical treatment of the bulk…

Mesoscale and Nanoscale Physics · Physics 2015-06-24 T. Rakshit , G-C. Liang , A. W. Ghosh , S. Datta

We obtain the phase-diagram of the half-filled honeycomb Hubbard model with density matrix embedding theory, to address recent controversy at intermediate couplings. We use clusters from 2-12 sites and lattices at the thermodynamic limit.…

Strongly Correlated Electrons · Physics 2015-06-18 Qiaoni Chen , George H. Booth , Sandeep Sharma , Gerald Knizia , Garnet Kin-Lic Chan

Topological insulators are bulk semiconductors that manifest in-gap massless Dirac surface states due to the topological bulk-boundary correspondence principle [1-3]. These surface states have been a subject of tremendous ongoing interest,…

We find that electron states at the bottom of the conduction bands of covalent semiconductors are distributed mainly in the interstitial channels and that this floating nature leads to the band-gap variation and the anisotropic effective…

Materials Science · Physics 2015-06-19 Yu-ichiro Matsushita , Atsushi Oshiyama
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