Related papers: A highly pixelated CdZnTe detector based on \texti…
This study investigates the charging-up effect on the Topmetal-II- chip in Gas Micro-Pixel Detectors(GMPD). It is found that this effect differs from the charging-up typically observed in gas detector multiplier devices and increases the…
Compton telescopes based on semiconductor technologies are being developed to explore the gamma-ray universe in an energy band 0.1--20 MeV, which is not well covered by the present or near-future gamma-ray telescopes. The key feature of…
Gamma-ray and fast-neutron imaging was performed with a novel liquid xenon (LXe) scintillation detector read out by a Gaseous Photomultiplier (GPM). The 100 mm diameter detector prototype comprised a capillary-filled LXe…
We study the use of a thermoelectric junction as a thermal radiation detector in the calorimetric regime, where single radiation bursts can be separated in time domain. We focus especially on the case of a large thermoelectric figure of…
Tellurium (Te) is an intrinsically p-type doped narrow bandgap semiconductor with excellent electrical conductivity and low thermal conductivity. Bulk trigonal Te has been theoretically predicted and experimentally demonstrated to be an…
A study of 3D pixel sensors of cell size 50 {\mu}m x 50 {\mu}m fabricated at IMB-CNM using double-sided n-on-p 3D technology is presented. Sensors were bump-bonded to the ROC4SENS readout chip. For the first time in such a small-pitch…
We developed CdTe double-sided strip detectors (DSDs or cross strip detectors) and evaluated their spectral and imaging performance for hard X-rays and gamma-rays. Though the double-sided strip configuration is suitable for imagers with a…
Depleted p-channel field effect transistor detectors with repetitive-non-destructive readout (RNDR-DEPFETs) achieve a deep sub-electron noise by averaging several independent measurements of one single event. During the repetitive readout…
Measuring the depth of interaction in thick Cadmium-Zinc-Telluride (CZT) detectors allows improved imaging and spectroscopy for hard X-ray imaging above 100 keV. The Energetic X-ray Imaging Survey Telescope (EXIST) will employ relatively…
An innovative X-ray imaging sensor with intrinsic digital characteristics is presented. It is based on Chromatic Photon Counting technology. The detector is able to count individually the incident X-ray photons and to separate them…
A coupled dielectric-metal metasurface (CDMM) consisting of amorphous silicon (a-$\textit{Si}$) rings and subwavelength holes in $\textit{Au}$ layer separated by a $\textit{SiO}_{2}$ layer is presented. The design parameters of the CDMM is…
Fast pixelated detectors incorporating direct electron detection (DED) technology are increasingly being regarded as universal detectors for scanning transmission electron microscopy (STEM), capable of imaging under multiple modes of…
Nontrivial low-energy excitations of crystalline solids have insightfully strengthened understanding of elementary particles in quantum field theory. Usually, topological quasiparticles are mainly focused on fermions in topological…
We studied the effects of bulk and surface conductivity on the performance of high-resistivity CdZnTe (CZT) pixel detectors with Pt contacts. We emphasize the difference in mechanisms of the bulk and surface conductivity as indicated by…
We report on the development of an innovative CdTe detector plane (DPIX) optimized for the detection and localization of gamma-ray bursts in the X-ray band (below 100 keV). DPIX is part of an R&D program funded by the French Space Agency…
We demonstrate a zero-bias ultraviolet (UV) detector using zinc oxide (ZnO) thin films as the active semiconductor layer, specifically for application in cryogenic conditions. The zero-bias device utilizes the piezoelectric potential…
The radiation hardness of passive CMOS pixel sensors fabricated in 150 nm LFoundry technology is investigated. CMOS process lines are especially of interest for large-scale silicon detectors as they offer high production throughput at…
The Fine Pixel CCD (FPCCD) is one of the candidate sensor technologies for the ILC vertex detector. The vertex detector is located near the interaction point, thus high radiation tolerance is required. Charge transfer efficiency of CCD is…
We present a combined experimental and theoretical approach for the determination of the low-temperature valence band offset (VBO) at CdSe/ZnTe heterojunctions with underlying zincblende crystal structure. On the experimental side, the…
Graded composition CdxZn1-xTe films were prepared by growing several alternate layers of CdTe and ZnTe by the Isothermal Close Space Sublimation technique. The thickness of both kinds of layers was modified along the structure to produce an…