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Computer simulations with Synopsys' Sentaurus TCAD of opto-electrical characteristics of separate-confinement heterostructure laser based on AlGaAs are used as an example to study the role of the width and depth of Quantum Well (QW) active…
The threshold properties of photonic crystal quantum dot lasers operating in the slow-light regime are investigated experimentally and theoretically. Measurements show that, in contrast to conventional lasers, the threshold gain attains a…
A detailed rate-equation-based model is developed to study carrier transport effects on optical and electrical characteristics of the Multiple Quantum Well Heterojunction Bipolar Transistor Laser in time-domain. Simulation results extracted…
Optical and electrical characteristics of AlGaAs lasers with separate confinement heterostructures are modeled by using Synopsys's Sentaurus TCAD, and open source software. The results for cases of 2-QW (2 Quantum Wells) and 3-QW structures…
Robust laser delivery and stabilization are key components in atom-based quantum technologies, such as quantum computing. Moving these technologies towards product-like deployment requires scalable, compact, cost-effective, and upgradable…
An optical transistor capable of simultaneous amplification and switching is theoretically proposed via cascaded second-order nonlinear interactions in a resonant structure. Two distinct operational schemes are analyzed. A single frequency…
We derive threshold equations for self-organization of laser driven atoms in an optical cavity. Our analysis includes probing with either a traveling wave or a retro reflected lattice. These two scenarios lead to qualitatively different…
We investigated the carrier and light trapping in GaInAs/AlGaAs single quantum well laser structures by means of time resolved photoluminescence and Raman spectroscopy. The influence of the shape and depth of the confinement potential and…
We have performed first-principles calculations of Si/SiO$_2$ superlattices in order to examine their electronic states, confinement and optical transitions, using linearized-augmented-plane-wave techniques and density-functional theory.…
The ongoing miniaturization of semiconductor lasers has enabled ultra-low threshold devices and even provided a path to approach thresholdless lasing with linear input-output characteristics. Such nanoscale lasers have initiated a discourse…
Quantum cascade lasers made of nanowire axial heterostructures are proposed. The dissipative quantum dynamics of their carriers is theoretically investigated using non-equilibrium Green functions. Their transport and gain properties are…
The development of the semiconductor quantum cascade laser (QCL) [1] has enabled bright coherent sources operating at frequencies between the optical (>100 THz) and electronic (<0.5 THz) ranges opening this frequency region for fundamental…
Self-consistent computations of the potential profile in complex semiconductor heterostructures can be successfully applied for comprehensive simulation of the gain and the absorption spectra, for the analysis of the capture, escape,…
Using the effective mass and rectangular potential approximations, the theory of electron dynamic conductivity is developed for the plane multilayer resonance tunnel structure placed into a constant electric field within the model of open…
We studied numerically and experimentally the effects of structural disorder on the performance of ultraviolet photonic crystal slab lasers. Optical gain selectively amplifies the high-quality modes of the passive system. For these modes,…
Nanolasers based on emerging dielectric cavities with deep sub-wavelength confinement of light offer a large light-matter coupling rate and a near-unity spontaneous emission factor, $\beta$. These features call for reconsidering the…
In this paper, we present a large signal and switching analysis for the Heterojunction Bipolar Transistor Laser (TL) to reveal its optical and electrical behavior under high current injection conditions. Utilizing appropriate models for…
The development prospects of a scintillator-photodiode type detector with an improved energy resolution attaining few per cent, R from 1 to 2%, are considered. The main resolution components have been analyzed theoretically, their…
An experimental study of the delayed threshold phenomenon in a Vertical Extended Cavity Semiconductor Emitting Laser is carried out. Under modulation of the pump power, the laser intensity exhibits a hysteresis behavior in the vicinity of…
In a recent Letter [Appl. Phys. Lett. 82, 1015 (2003)], Williams et al. reported the development of a terahertz quantum cascade laser operating at 3.4 THz or 14.2 meV. We have calculated and analyzed the gain spectra of the quantum cascade…