Related papers: Straintronic magneto-tunneling-junction based tern…
Spintronic devices have recently attracted a lot of attention in the field of unconventional computing due to their non-volatility for short and long term memory, non-linear fast response and relatively small footprint. Here we report how…
Ensuring high performance, while meeting the power budget is a challenging task as the world is moving towards next-generation computing. Researchers and designers are in search of new solutions for efficient computation. Spintronics…
We investigated the low temperature performance of CoFeB/MgO based perpendicular magnetic tunnel junctions (pMTJs) by characterizing their quasi-static switching voltage, high speed pulse write error rate and endurance down to 9 K. pMTJ…
Solid state ionic conductors are good candidates for the next generation of nonvolatile computer memory elements. Such devices have to show reproducible resistance switching at reasonable voltage and current values even if scaled down to…
This paper reviews the recent developments on building nanoelectronics for our future information processing paradigm using multiferroic composites. With appropriate choice of materials, when a tiny voltage of few tens of millivolts is…
Magnetic tunnel junctions (MTJs) are crucial components in high-performance spintronic devices. Traditional MTJs rely on ferromagnetic (FM) materials but significant improvements in speed and packing density could be enabled by exploiting…
Conventional computing paradigm struggles to fulfill the rapidly growing demands from emerging applications, especially those for machine intelligence, because much of the power and energy is consumed by constant data transfers between…
Superlattices may play an important role in next generation electronic and spintronic devices if the key-challenge of the reading and writing data can be solved. This challenge emerges from the coupling of low dimensional individual layers…
We propose the use of resonant tunneling as a route to enhance the spin-transfer torque switching characteristics of magnetic tunnel junctions. The proposed device structure is a resonant tunneling magnetic tunnel junction based on a…
There is a growing demand for highly-performant memories and memristive technologies for use in in-memory computing. Magnetic tunnel junctions (MTJs) have thus far addressed this need in the field of spintronics. Despite their low write…
This paper describes a robust, modular, and physics- based circuit framework to model conventional and emerging Magnetic Tunnel Junction (MTJ) devices. Magnetization dynamics are described by the stochastic Landau-Lifshitz-Gilbert (sLLG)…
The primary impediment to continued improvement of traditional charge-based electronic devices in accordance with Moore's law is the excessive energy dissipation that takes place in the devices during switching of bits. One very promising…
Perpendicular magnetic tunnel junctions are one of the building blocks for spintronic memories, which allow fast nonvolatile data access, offering substantial potentials to revolutionize the mainstream computing architecture. However,…
This paper presents a novel resistive-only Binary and Ternary Content Addressable Memory (B/TCAM) cell that consists of two Complementary Resistive Switches (CRSs). The operation of such a cell relies on a logic$\rightarrow$ON state…
Since it is undesirable to require an external magnetic field for on-chip memory applications, we investigate the use of a Rashba effective field alternatively for assisting the electric-field-induced switching operation of a three terminal…
Reversible straintronic switching of a nanomagnet's magnetization between two stable or metastable states promises ultra-energy-efficient non-volatile memory. Here, we report strain-induced magnetization switching in ~300 nm sized FeGa…
The large-scale fabrication of three-terminal magnetic tunnel junctions (MTJs) with high yield is becoming increasingly crucial, especially with the growing interest in spin-orbit torque (SOT) magnetic random access memory (MRAM) as the…
Recent research has indicated that introducing impurities that increase the resistivity of Pt can enhance the efficiency of the spin Hall torque it generates. Here we directly demonstrate the usefulness of this strategy by fabricating…
Manipulation of tunneling spin-polarized electrons via a ferroelectric interlayer sandwiched between two ferromagnetic electrodes, dubbed Multiferroic Tunnel Junctions (MFTJs), can be achieved not only by the magnetic alignments of two…
The desire to perform information processing, computation, communication, signal generation and related tasks, while dissipating as little energy as possible, has inspired many ideas and paradigms. One of the most powerful among them is the…