Related papers: Engineering Quantum Confinement in Semiconducting …
We present transport measurements of a tunable silicon metal-oxide-semiconductor double quantum dot device with lateral geometry. Experimentally extracted gate-to-dot capacitances show that the device is largely symmetric under the gate…
In this work, the performance of Tunnel Field-Effect Transistors (TFETs) based on two-dimensional Transition Metal Dichalcogenide (TMD) materials is investigated by atomistic quantum transport simulations. One of the major challenges of…
The designer approach has become a new paradigm in accessing novel quantum phases of matter. Moreover, the realization of exotic states such as topological insulators, superconductors and quantum spin liquids often poses challenging or even…
Transistor miniaturization requires controlling gate leakage through ultrathin dielectrics and minimizing source/drain contact resistance. Although two-dimensional (2D) semiconductors offer excellent electrostatic control, their interfaces…
Recent experimental progress in coupling nanoscale conductors to superconducting microwave cavities has opened up for transport investigations of the deep quantum limit of light-matter interactions, with tunneling electrons strongly coupled…
Semiconductor heterostructures are the fundamental platform for many important device applications such as lasers, light-emitting diodes, solar cells and high-electron-mobility transistors. Analogous to traditional heterostructures, layered…
Excitons -- bound electron-hole pairs -- play a central role in light-matter interaction phenomena, and are crucial for wide-ranging applications from light harvesting and generation to quantum information processing. A long-standing…
Two-dimensional (2D) transition metal dichalcogenides (TMDCs) have been the subject of sustained research interest due to their extraordinary electronic and optical properties. They also exhibit a wide range of structural phases because of…
Electronic structure and transport characteristics of coupled CdS and ZnSe quantum dots are studied using density functional theory and non equilibrium Greens function method respectively. Our investigations show that in these novel coupled…
We describe in detail a set of ideas for implementing qubits, quantum gates and quantum gate networks in a semiconductor heterostructure device. Our proposal is based on an extension of the technology used for surface acoustic wave (SAW)…
The discovery of a two-dimensional electron gas (2DEG) at the interface between insulating oxides has led to a well-deserved level of excitement due to possible applications as "in-plane" all-oxide nanoelectronics. Here we expand the range…
Accurate determination of carrier transport properties in two-dimensional (2D) materials is critical for designing high-performance nano-electronic devices and quantum information platforms. While first-principles calculations effectively…
Combining the capabilities of gate defined quantum transport devices in GaAs-based heterostructures and of optically addressed self-assembled quantum dots could open broad perspectives for new devices and functionalities. For example,…
Strongly interacting electrons in layered materials give rise to a plethora of emergent phenomena, such as unconventional superconductivity. heavy fermions, and spin textures with non-trivial topology. Similar effects can also be observed…
The epitaxial growth of germanium on silicon leads to the self-assembly of SiGe nanocrystals via a process that allows the size, composition and position of the nanocrystals to be controlled. This level of control, combined with an inherent…
When floating on a two-dimensional (2D) surface of superfluid $^{4}$He, electrons arrange themselves in 2D crystalline structure known as Wigner crystal. In channels, the boundaries interfere the crystalline order and in case of very narrow…
Van der Waals semiconductor heterostructures could be a platform to harness hot photoexcited carriers in the next generation of optoelectronic and photovoltaic devices. The internal quantum efficiency of hot-carrier devices is determined by…
In the present work, we have investigated the performances of L shaped Vertical broken bandgapheterostructureInSb InAsn-channel tunnel field effect transistors TFETs of 4 nm thin channel structures with the gate lengths of 20nm. We have…
Strong coupling between electronic and mechanical degrees of freedom is a basic requirement for the operation of any nanoelectromechanical device. In this Review we consider such devices and in particular investigate the properties of small…
Quantum devices, which rely on quantum mechanical effects for their operation, may offer advantages, such as reduced dimensions, increased speed, and energy efficiency, compared to conventional devices. However, quantum phenomena are…