Related papers: Spin-polarized quantum transport properties throug…
Coherent spin-dependent electronic transport is investigated in a molecular junction made of polymeric chain attached to ferromagnetic electrodes (Ni and Co, respectively). Molecular system is described by a simple Huckel model, while the…
In a recent paper (JPCM 29, 445302 (2017)) we have studied the effects of mechanical strain and magnetic field on the electronic transport properties in graphene. In this article we extended our work to Weyl semimetals (WSM). We show that…
Efficient injection of spin-polarized electrons into the conduction band of silicon is limited by the formation of a silicide at the ferromagnetic metal (FM)/silicon interface. In the present work, this "magnetically-dead" silicide (where…
Experiments have shown that the tunneling current in a Co/Al$_2$O$_3$ magnetic tunneling junction (MTJ) is positively spin polarized, opposite to what is intuitively expected from standard tunneling theory which gives the spin polarization…
The universal oscillation of the tunnel magnetoresistance (TMR) ratio as a function of the insulating barrier thickness in crystalline magnetic tunnel junctions (MTJs) is a long-standing unsolved problem in condensed matter physics. To…
We theoretically study the electron transport properties in a ferromagnetic/normal/ferromagnetic tunnel junction, which is deposited on the top of a topological surface. The conductance at the parallel (\textbf{P}) configuration can be much…
Magnetic tunnel junctions (MTJs) with conventional bulk ferromagnets separated by a nonmagnetic insulating layer are key building blocks in spintronics for magnetic sensors and memory. A radically different approach of using atomically-thin…
Motivated by recent low-temperature magnetoresistance measurements in twisted bilayer graphene aligned with hexagonal Boron Nitride substrate, we perform a systematic study of possible symmetry breaking orders in this device at a filling of…
In this work, we explore the strain and curvature effects on the electronic properties of a curved graphene structure, called the graphene wormhole. The electron dynamics is described by a massless Dirac fermion containing…
Antiferromagnets (AFMs) exhibit spin arrangements with no net magnetization, positioning them as promising candidates for spintronics applications. While electrical manipulation of the single-crystal AFMs, composed of periodic spin…
We study spin-orbit-torque-driven ferromagnetic resonance (FMR) in ferromagnetic (FM) bilayers, consisting of Co and permalloy (Py), sandwiched between Pt and MgO layers. We find that the FM layer in contact with the Pt layers dominantly…
The bilayer heterostructures composed of an ultrathin ferromagnetic metal (FM) and a material hosting strong spin-orbit (SO) coupling are principal resource for SO torque and spin-to-charge conversion nonequilibrium effects in spintronics.…
Theory of electrical spin injection from a ferromagnetic (FM) metal into a normal (N) conductor is presented. We show that tunnel contacts (T) can dramatically increase spin injection and solve the problem of the mismatch in the…
Monolayer black phosphorus (MBP) is an interesting emerging electronic material with a direct band gap and relatively high carrier mobility. In this work we report a theoretical investigation of nonequilibrium spin injection and…
In a recent paper [R. Soto-Garrido and E. Mu\~noz, J. Phys. Condens. Matter 30, 195302 (2018)], we studied the electronic transport properties in Weyl semimetals (WSMs) submitted to the combined effects of torsional mechanical strain and…
We study the electric-field tunable electronic properties of phosphorene thin films, using the framework of density functional theory. We show that phosphorene thin films offer a versatile material platform to study two dimensional Dirac…
My research is dedicated to the electronic properties of functional oxides. My activity specifically focuses on ferroelectric tunnel junctions in which an ultrathin layer of ferroelectric material is intercalated between two metallic…
We report the observation of tunneling anisotropic magnetoresistance effect (TAMR) in the epitaxial metal-semiconductor system Fe/GaAs/Au. The observed two-fold anisotropy of the resistance can be switched by reversing the bias voltage,…
The spin current can result in a spin-transfer torque in the normal-metal(NM)|ferromagnetic-insulator(FMI) or normal-metal(NM)|ferromagnetic-metal(FMM) bilayer. In the earlier study on this issue, the spin relaxations were ignored or…
Hexagonal boron nitride (hBN) is a prototypical high-quality two-dimensional insulator and an ideal material to study tunneling phenomena, as it can be easily integrated in vertical van der Waals devices. For spintronic devices, its…