Related papers: A model study of present-day Hall-effect circulato…

The potential barrier between source and gate in HEMTs and between source and channel in MOSFET controls the current output and the velocity injection of electrons in the channel [1], [2]. In non self aligned structures the electric field…

A mean field calculation of the $T\to 0$ limit of the Hall conductance of electron-doped cuprates such as $Pr_{2-x}Ce_xCuO_{4+\delta}$ is presented. The data are found to be qualitatively consistent with the reconstruction of the Fermi…

We report a magneto-induced topological phase transition in inverted InAs/GaSb bilayers from a quantum spin Hall insulator to a normal insulator. We utilize a dual-gated Corbino device in which the degree of band inversion, or equivalently…

This study examines the anomalous Hall effect (AHE) in the Heusler series \ce{Mn3Z} (Z=Ga, Ge, Sn), with a particular emphasis on the manipulation of non-collinear antiferromagnetic structures to enhance AHE. By employing density-functional…

We present a theoretical and experimental study of superconducting ring resonators as an initial step toward their implementation in superconducting electronics and quantum technologies, with promising applications including superconducting…

We have investigated the spatial distribution of the electron temperature generated in a two-dimensional electron system (2DES) subjected to a perpendicular magnetic field. We measure thermoelectric voltages between Ohmic contacts located…

Metamaterials can exhibit exotic nonreciprocal properties, yet corresponding fundamental limits and design blueprints achieving them are largely unexplored. Here, we derive comprehensive bounds on the effective nonreciprocal properties of…

Devices exhibiting the integer quantum Hall effect can be modeled by one-electron Schroedinger operators describing the planar motion of an electron in a perpendicular, constant magnetic field, and under the influence of an electrostatic…

The topological magnetoelectric effect (TME) in three-dimensional topological insulators (TIs), described by $\Delta P = \frac{e^2}{2h} N_{\rm Ch}^{(2)} \Delta B$, serves as a condensed-matter realization of the four-dimensional quantum…

We obtain analytic formulas for the frequency-dependent spin-Hall conductivity of a two-dimensional electron gas (2DEG) in the presence of impurities, linear spin-orbit Rashba interaction, and external magnetic field perpendicular to the…

The anomalous Hall effect (AHE) is studied on the surface of a 3D magnetic topological insulator. By applying a modified semi-classical framework, all three contributions to the AHE, the intrinsic Berry phase curvature effect, the side-jump…

We collect and review works which treat two-dimensional electron gases in quantum wells (mostly GaAs/GaAlAs heterostructures) in the presence of quantizing magnetic fields as open systems in contact with outside reservoirs. If a reservoir…

We consider the bilocal conductivity tensor, the two-probe conductance and its fluctuations for a disordered phase-coherent two-dimensional system of non-interacting electrons in the presence of a magnetic field, including correctly the…

We report the first observation of the spin Hall conductivity spectrum in GaAs at room temperature. Our terahertz polarimetry with a precision of several $\mu$rads resolves the Faraday rotation of terahertz pulses arising from the inverse…

We report an experimental study of electron transport properties of MnSe/(Bi,Sb)2Te3 heterostructures, in which MnSe is an antiferromagnetic insulator, and (Bi,Sb)2Te3 is a three-dimensional topological insulator (TI). Strong magnetic…

There is considerable experimental evidence for the existence in Quantum Hall systems of an approximate emergent discrete symmetry, $\Gamma_0(2) \subset SL(2,Z)$. The evidence consists of the robustness of the tests of a suite a predictions…

We have fabricated AlGaAs/GaAs heterostructure devices in which the conduction channel can be populated with either electrons or holes simply by changing the polarity of a gate bias. The heterostructures are entirely undoped, and carriers…

Anomalous Hall Effect (AHE) response in magnetic systems is typically proportional to an out-of-plane magnetization component because of the restriction imposed by system symmetries, which demands that the magnetization, applied electric…

Extraordinary Hall effect (EHE) in bilayer F/S(N) was investigated theoretically. The conductivity tensor $\sigma_{\alpha\beta}$ is calculated in the Kubo formalism with Green functions found as the solutions of the Gorkov equations. We…

Superconducting quantum processors are a compelling platform for analog quantum simulation due to the precision control, fast operation, and site-resolved readout inherent to the hardware. Arrays of coupled superconducting qubits natively…