Related papers: Charge puddles in a completely compensated topolog…
At present, topological insulators are the most efficient thermoelectric materials at room temperature. However, at non-zero temperatures, it seems to arise a conflict between having time-reversal symmetry, which implies minimal entropy,…
Thermoelectric (TE) devices have been attracting increasing attention because of their ability to convert heat directly to electricity. To date, improving the TE figure of merit remains the key challenge. The advent of the topological…
We present the experimental observation of a drastically enhanced thermal Hall effect in the topological insulator material TlBi$_{0.15}$Sb$_{0.85}$Te$_2$. Although heat transport is dominated by phonons, moderate magnetic fields generate a…
An acoustic topological insulator (TI) is synthesized using topology optimization, a free material inverse design method. The TI appears spontaneously from the optimization process without imposing requirements on the existence of pseudo…
To harness the true potential of topological insulators as quantum materials for information processing, it is imperative to maximise topological surface state conduction, while simulateneously improving their quantum coherence. However,…
We reanalyze some of the critical transport experiments and provide a coherent understanding of the current generation of topological insulators (TIs). Currently TI transport studies abound with widely varying claims of the surface and bulk…
Using high-throughput automation of ab-initio impurity embedding simulations, we created a database of $3d$ and $4d$ transition metal defects embedded into the prototypical topological insulator (TI) Bi$_2$Te$_3$. We simulate both single…
Topological insulators are materials with a bulk excitation gap generated by the spin orbit interaction, and which are different from conventional insulators. This distinction is characterized by Z_2 topological invariants, which…
The interplay between quantum interference, electron-electron interaction (EEI), and disorder is one of the central themes of condensed matter physics. Such interplay can cause high-order magnetoconductance (MC) corrections in…
As a methodology for controlling the carrier transport of topological insulators (TI's), a flexible tuning in carrier number on the surface states (SS's) of three dimensional TI's by surface modifications using organic molecules is…
The electronic structure of WTe2 bulk and layers are investigated by using the first principles calculations. The perfect electron-hole (n-p) charge compensation and high carrier mobilities are found in WTe2 bulk, which may result in the…
Magnetic topological insulators (MTIs) are among the prominent platforms for the next generation of high-speed and low-power spintronic devices. However, unlike their non-magnetic counterparts, where the surface spin-momentum locking…
We show that topological defects in quadrupole insulators do not host quantized fractional charges, contrary to what their Wannier representation indicates. In particular, we test the charge quantization hypothesis based on the Wannier…
Topological insulators (TIs) have attracted much attention due to their spin-polarized surface and edge states, whose origin in symmetry gives them intriguing quantum-mechanical properties. Robust control over the chemical potential of TI…
We found that non-magnetic defects in two-dimensional topological insulators induce bound states of two kinds for each spin orientation: electron- and hole-like states. Depending on the sign of the defect potential these states can be also…
We study the quantization of the excess charge on $N$ localized (ultra-screened) impurities in $d$-dimensional crystalline insulating systems. Solving Dyson's equation, we demonstrate that such charges are topological, by expressing them as…
Electronic topological insulators are one of the breakthroughs of the 21st century condensed matter physics. So far, the search for a light counterpart of an electronic topological insulator has remained elusive. This is due to the…
Topological insulator (TI) materials are exciting candidates for integration into next-generation memory and logic devices because of their potential for efficient, low-energy-consumption switching of magnetization. Specifically, the family…
The thermoelectric response of 80-nm-thick strained HgTe films of a three-dimensional topological insulator (3D TI) has been studied experimentally. An ambipolar thermopower is observed where the Fermi energy moves from conducting to the…
Interfaces between exfoliated topological insulator Bi2Se3 and several transition metals deposited by sputtering were studied by XPS, SIMS, UPS and contact I-V measurements. Chemically clean interfaces can be achieved when coating Bi2Se3…