Related papers: First-principles study on magnetic tunneling junct…
We study spin-dependent transport properties in magnetic tunneling junctions (MTJs) with semiconductor barriers, Fe/CuInSe$_2$/Fe(001) and Fe/CuGaSe$_2$/Fe(001). By analyzing their transmittances at zero bias voltage on the basis of the…
We investigated the spin-dependent transport properties of Fe/MgAl2O4/Fe(001) magnetic tunneling junctions (MTJs) on the basis of first-principles calculations of the electronic structures and the ballistic conductance. The calculated…
We theoretically study the tunnel magnetoresistance (TMR) effect in (111)-oriented magnetic tunnel junctions (MTJs) with SrTiO$_{3}$ barriers, Co/SrTiO$_{3}$/Co(111) and Ni/SrTiO$_{3}$/Ni(111). Our analysis combining the first-principles…
Magnetic tunnel junctions (MTJs) have attracted strong research interest within the last decades due to their potential use as nonvolatile memory such as MRAM as well as for magnetic logic applications. Half-metallic magnets (HMMs) have…
We investigate the spin-dependent transport of GaMnAs-based magnetic tunnel junctions (MTJs) containing a paramagnetic AlMnAs barrier with various thicknesses. The barrier height of AlMnAs with respect to the Fermi level of GaMnAs is…
We investigate bias voltage effects on the spin-dependent transport properties of Fe/MgAl${}_2$O${}_4$/Fe(001) magnetic tunneling junctions (MTJs) by comparing them with those of Fe/MgO/Fe(001) MTJs. By means of the nonequilibrium Green's…
Magnetic tunnel junctions (MTJs) with conventional bulk ferromagnets separated by a nonmagnetic insulating layer are key building blocks in spintronics for magnetic sensors and memory. A radically different approach of using atomically-thin…
It has been reported in experiments that capping layers which enhance the perpendicular magnetic anisotropy (PMA) of magnetic tunnel junctions (MTJs) induce great impact on the tunnel magnetoresistance (TMR). To explore the essential…
The magnetic tunnel junction is a cornerstone of spintronic devices and circuits, providing the main way to convert between magnetic and electrical information. In state-of-the-art magnetic tunnel junctions, magnesium oxide is used as the…
Hexagonal boron nitride ($h$-BN), with its strong in-plane bonding and good lattice match to hcp and fcc metals, offers a promising alternative barrier material for magnetic tunnel junctions (MTJs). Here, we investigate spin-dependent…
Giant tunnel magnetoresistance (TMR) ratios of 417% at room temperature (RT) and 914% at 3 K were demonstrated in epitaxial Fe/MgO/Fe(001) exchanged-biased spin-valve magnetic tunnel junctions (MTJs) by tuning growth conditions for each…
Two-dimensional van der Waals (vdW) ferromagnetic/semiconductor heterojunctions represent an ideal platform for studying and exploiting tunneling magnetoresistance (TMR) effects due to the versatile band structure of semiconductors and…
Magnetic tunnel junctions (MTJs), that consist of two ferromagnetic electrodes separated by an insulating barrier layer, have non-trivial fundamental properties associated with spin-dependent tunneling. Especially interesting are fully…
Spinel MgAl2O4 and family oxides are emerging barrier materials useful for magnetic tunnel junctions (MTJs). We report large tunnel magnetoresistance (TMR) ratios up to 429% at room temperature (RT) and 1,034% at 10 K in a…
In quasi-magnetic tunnel junctions (QMTJs) with a EuS spin filter tunnel barrier between Al and Co electrodes, we observed large magnetoresistance (MR). The bias dependence shows an abrupt increase of MR ratio in high bias voltage, which is…
Through Bayesian optimization and the least absolute shrinkage and selection operator (LASSO) technique combined with first-principles calculations, we investigated the tunnel magnetoresistance (TMR) effect of…
GaMnAs-based magnetic tunnel junction (MTJ) devices are characterized by in-plane and perpendicular-toplane magnetotransport at low temperatures. Perpendicular-to-plane transport reveals the typical tunneling magnetotransport (TMR) signal.…
The optimal Co concentration in Fe$_{1-x}$Co$_{x}$/MgO magnetic tunnel junctions (MTJs) that maximizes tunneling magnetoresistance (TMR) is still under investigation. We perform a first-principles transport study on MTJs using disordered…
Epitaxial Fe/magnesium gallium spinel oxide (MgGa2O4)/Fe(001) magnetic tunnel junctions (MTJs) were fabricated by magnetron sputtering. Tunnel magnetoresistance (TMR) ratio up to 121% at room temperature (196% at 4 K) was observed,…
We investigate the thermoelectric properties of Fe/MgO/Fe(001) magnetic tunnel junctions (MTJs) by means of the linear-response theory combined with a first-principles-based Landauer-B\"uttiker approach. We find that the Seebeck coefficient…