Related papers: Effect of Ionized Impurity Screening on Spin Decoh…
We argue that in the ensemble Monte Carlo approach, the spin decoherence caused by electron-electron interactions in n-type bulk GaAs at room temperature, according to Dyakonov-Perel theory, is mainly induced by the electron density while…
We study spin relaxation in n-type bulk GaAs, due to the Dyakonov--Perel mechanism, using ensemble Monte Carlo methods. Our results confirm that spin relaxation time increases with the electronic density in the regime of moderate electronic…
In order to explore the spin accumulation, evaluating the spin galvanic and spin Hall effect, we utilize the semi-classical Boltzmann equation based on input from the relativistic Korringa-Kohn-Rostoker Green's function method, within the…
We show that by computing the electron-impurity scattering rate at the first order via Fermi's golden rule, and assuming that the localized impurity potential is of Yukawa form, one obtains a wave vector transfer distribution which is…
We investigate the Kondo effect in two-dimensional disordered electron systems using a finite-temperature quantum Monte Carlo method. Depending on the position of a magnetic impurity, the local moment is screened or unscreened by the spin…
Single-site and cluster dynamical mean-field methods are used to estimate the response of a doped Mott insulator to a charged impurity. The effect of correlations on the Thomas-Fermi screening properties is determined. The charge density,…
We study the effect of the impurity density on lifetimes and relaxation lengths of electron spins in the presence of a static electric field in a n-type GaAs bulk. The transport of electrons and the spin dynamics are simulated by using a…
The influence of temperature and transport conditions on the electron spin relaxation in lightly doped n-type GaAs semiconductors is investigated. A Monte Carlo approach is used to simulate electron transport, including the evolution of…
We perform a full microscopic investigation on the spin relaxation in $n$-type (001) GaAs quantum wells with Al$_{0.4}$Ga$_{0.6}$As barrier due to the D'yakonov-perel' mechanism from nearly 20 K to the room temperature by constructing and…
A first-principles calculation of the impurity screening in Si and Ge nanocrystals is presented. We show that isocoric screening gives results in agreement with both the linear response and the point-charge approximations. Based on the…
This paper investigates the mobility of electrons scattering from the coupled system of electrons and longitudinal optical (LO) phonons in n-type GaAs. The Boltzmann equation is solved exactly for low electric fields by an iterative method,…
Screening effects are important to understand various aspects of ion-solid interactions and, in particular, play a crucial role in the stopping of ions in solids. In this paper the phase shifts and scattering amplitudes for the…
The Kondo effect, an eminent manifestation of many-body physics in condensed matter, is traditionally explained as exchange scattering of conduction electrons on a spinful impurity in a metal. The resulting screening of the impurity's local…
The screening of a test charge by partially degenerate non-ideal free electrons at conditions related to warm dense matter and dense plasmas is investigated using linear response theory and the local field correction based on ab inito…
We study the problem of an impurity in fully polarized (spin-up) low density neutron matter with the help of an accurate quantum Monte Carlo method in conjunction with a realistic nucleon-nucleon interaction derived from chiral effective…
We combine extensive precision measurements of the optically detected spin dynamics and magneto-transport measurements in a contiguous set of n-doped bulk GaAs structures in order to unambiguously unravel the intriguing but complex…
We study the spin decoherence in n-type bulk GaAs for moderate electronic densities at room temperature using Ensemble Monte Carlo method. We demonstrate that the third-body rejection method devised by Ridley can be successfully adapted to…
Utilizing time-resolved Kerr rotation techniques, we have investigated the spin dynamics of a high mobility, low density two dimensional electron gas in a GaAs/Al0:35Ga0:65As heterostructure in dependence on temperature from 1.5 K to 30 K.…
The electron spin relaxation in $n$-type and intrinsic GaAs$_{1-x}$Bi$_x$ with Bi composition $0\le x \le 0.1$ is investigated from the microscopic kinetic spin Bloch equation approach. The incorporation of Bi is shown to markedly decrease…
Based on a Monte Carlo method, we investigate the influence of transport conditions on the electron spin relaxation in GaAs. The decay of initial electron spin polarization is calculated as a function of distance under the presence of…