Related papers: Ising spin model using Spin-Hall Effect (SHE) indu…
We report the first electrical manipulation and detection of the mesoscopic intrinsic spin-Hall effect (ISHE) in semiconductors through non-local electrical measurement in nano-scale H-shaped structures built on high mobility HgTe/HgCdTe…
The spin Hall effect (SHE) is normally discussed in terms of a spin current, which is ill-defined in strongly spin-orbit-coupled systems because of spin non-conservation. In this work we propose an alternative view of SHE phenomena by…
Large charge-to-spin conversion (spin Hall angle) and spin Hall conductivity are prerequisites for development of next generation power efficient spintronic devices. In this context, heavy metals (e.g. Pt, W etc.), topological insulators,…
We propose an electrically driven spin injector into normal metals and semiconductors, which is based on a magnetic tunnel junction (MTJ) subjected to a microwave voltage. Efficient functioning of such an injector is provided by…
In this communication we report the existence of a dynamic ``spin-reversal'' transition in an Ising system perturbed by a pulsed external magnetic field. The transition is achieved by tuning the strength ($h_p$) and/or the duration ($\Delta…
The bulk and boundary magnetizations are calculated for the critical Ising model on a randomly triangulated disk in the presence of a boundary magnetic field h. In the continuum limit this model corresponds to a c = 1/2 conformal field…
Conventionally, Selective Harmonic Elimination (SHE) method in 2-level inverters, finds best switching angles to reach first voltage harmonic to reference level and eliminate other harmonics, simultaneously. Considering Induction Motor (IM)…
Spin filtering and its back-action spin transfer torque (STT) are key ingredients of latest spintronic devices based on magnetic tunnel junctions (MTJs). Resonant tunneling (RT), implemented by design or occurring as parasitic effects, is…
Spin Hall effect converts charge current to spin current, which can exert spin-torque to switch the magnetization of a nanomagnet. Recently, it is shown that the ratio of spin current to charge current using spin Hall effect can be made…
This paper proposes a novel spiking artificial neuron design based on a combined spin valve/magnetic tunnel junction (SV/MTJ). Traditional hardware used in artificial intelligence and machine learning faces significant challenges related to…
We report that by measuring current-induced hysteresis loop shift versus in-plane bias magnetic field, the spin Hall effect (SHE) contribution of the current-induced effective field per current density, $\chi_{SHE}$, can be estimated for Pt…
Charge-spin interconversion in magnetic materials is investigated by using first-principles calculations. In addition to the conventional spin Hall effect (SHE) that requires mutual orthogonality of the charge current, spin-flow direction,…
This research concerns design optimization problems involving numerous design parameters and large computational models. These problems generally consist in non-convex constrained optimization problems in large and sometimes complex search…
The control of spin-dependent properties by voltage, not involving magnetization switching, has significant advantages for low-power spintronics. Here, we predict that the interfacial crystal Hall effect (ICHE) can serve for this purpose.…
Magnetoresistance (MR) provides a crucial tool for experimentally studying spin torques. While MR is well established in the device geometry of the spin Hall effect (SHE), as exemplified by the magnet/heavy-metal heterostructures, its role…
In this study the magnetization phenomenon has been investigated as a behavior of interacting elementary moments ensemble, with the help of Ising model [1] in the frame of non-extensive statistical mechanics. To investigate the physical…
The spin Hall effect (SHE) can generate a pure spin current by an electric current, which is promisingly used to electrically control magnetization. To reduce power consumption of this control, a giant spin Hall angle (SHA) in the SHE is…
The writing energy for reversing the magnetization of the free layer in a magnetic tunnel junction (MTJ) is a key figure of merit for comparing the performances of magnetic random access memories with competing technologies. Magnetization…
Superparamagnetic tunnel junctions (SMTJs) are promising sources for the randomness required by some compact and energy-efficient computing schemes. Coupling SMTJs gives rise to collective behavior that could be useful for cognitive…
Recent research has indicated that introducing impurities that increase the resistivity of Pt can enhance the efficiency of the spin Hall torque it generates. Here we directly demonstrate the usefulness of this strategy by fabricating…