Related papers: Characterization of spin-orbit fields in InGaAs qu…
We show that the bulk-inversion-asymmetry-type strain-induced spin-orbit coupling can be used to effectively modify the Dresselhaus spin splitting in (001) GaAs quantum wells with small well width and the resulting spin lifetime can be…
We investigate theoretically the coherent longitudinal and transversal spin relaxation of photoexcited electrons in quantum wells in quantized magnetic fields. We find the relaxation time for typical quantum well parameters between 100 and…
We perform a full microscopic investigation on the spin relaxation in $n$-type (001) GaAs quantum wells with Al$_{0.4}$Ga$_{0.6}$As barrier due to the D'yakonov-perel' mechanism from nearly 20 K to the room temperature by constructing and…
We have observed the Zeeman-split excited state of a spin-1/2 multi-electron Si/SiGe depletion quantum dot and measured its spin relaxation time T1 in magnetic fields up to 2 T. Using a new step-and-reach technique, we have experimentally…
A theory for longitudinal (T1) and transverse (T2) electron spin coherence times in zincblende semiconductor quantum wells is developed based on a non-perturbative nanostructure model solved in a fourteen-band restricted basis set.…
InAs quantum well heterostructures are of considerable interest for mesoscopic device applications such as scanning probe and magnetic recording sensors, which require the channel to be close to the surface. Here we report on…
Electron spins in an InGaAs semiconductor quantum well are used as a magnetometer of magnetic stray-fields from patterned Fe stripes. Using time-resolved Faraday rotation, the coherent precession of quantum-well spins in the inhomogeneous…
In this contribution, we investigated the spin coherence of high-mobility dense two-dimensional electron gases confined in multilayer systems. The dynamics of optically-induced spin polarization was experimentally studied employing the…
We have studied the spin dynamics of a dense two-dimensional electron gas confined in a GaAs/AlGaAs triple quantum well by using time-resolved Kerr rotation and resonant spin amplification. Strong anisotropy of the spin relaxation time up…
We address the temperature influence on the precessional motion of electron spins under transverse magnetic field, studied in a GaAs/AlGaAs triple quantum wells, using pump-probe Kerr rotation. In the presence of an applied in-plane…
The theory of spin relaxation of conduction electrons is developed for zinc-blende-type quantum wells grown on (110)-oriented substrate. It is shown that, in asymmetric structures, the relaxation of electron spin initially oriented along…
Optically pumped nuclear magnetic resonance (OPNMR) measurements were performed in two different electron-doped multiple quantum well samples near the fractional quantum Hall effect ground state nu=1/3. Below 0.5K, the spectra provide…
The spin diffusion/transport in $n$-type (001) GaAs quantum well at high temperatures ($\ge120$ K) is studied by setting up and numerically solving the kinetic spin Bloch equations together with the Poisson equation self-consistently. All…
The influence of the Rashba spin-orbit coupling on the electron spin dynamics is investigated for a ballistic semiconductor quantum wire with a finite width. We monitor the spin evolution using the time-dependent Schr\"odinger equation. The…
The longest spin lifetimes in bulk n-GaAs exceed 100 ns for doping concentrations near the metal-insulator transition (J.M. Kikkawa, D.D. Awschalom, Phys. Rev. Lett. 80, 4313 (1998)). The respective electronic states have yet not been…
We study the spin-orbit interaction (SOI) in InAs/ GaSb and InAs quantum wells. We show through temperature- and gate-dependent magnetotransport measurements of weak antilocalization that the dominant spin-orbit relaxation mechanism in our…
InSb$_{1-x}$As$_{x}$ is a promising material system for exploration of topological superconductivity in hybrid superconductor/semiconductor devices due to large effective g-factor and enhanced spin-orbit coupling when compared to binary…
We use time-resolved Kerr rotation to demonstrate the optical and electronic tuning of both the electronic and local moment (Mn) spin dynamics in electrically gated parabolic quantum wells derived from II-VI diluted magnetic semiconductors.…
We present a method of obtaining information about spin lifetimes in quantum dots from measurements of electrical transport. The dot is under resonant microwave irradiation and at temperatures comparable to or larger than the Zeeman energy.…
We investigate theoretically the Rashba spin-orbit interaction in InAs/GaSb quantum wells(QWs). We find that the Rashba spin-splitting (RSS) depends sensitively on the thickness of the InAs layer. The RSS exhibits nonlinear behavior for…