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AlScN thin films were grown via metalorganic chemical vapor deposition (MOCVD), showing controllable incorporation of scandium (Sc) into the AlN lattices. Systematic variation of growth parameters demonstrated an obvious influence on Sc…
The integration of two-dimensional $MoS_{2}$ with $GaN$ recently attracted significant interest for future electronic/optoelectronic applications. However, the reported studies have been mainly carried out using heteroepitaxial $GaN$…
Optical lattice loaded with cold atoms can exhibit a tunable photonic band gap for a weak probe field under the conditions of electromagnetically induced transparency. This system possesses a number of advantageous properties, including…
Using first-principles calculations combined with a semi-empirical van der Waals dispersion correction, we have investigated structural parameters, mixing enthalpies, and band gaps of buckled and planar few-layer In$_x$Ga$_{1-x}$N alloys.…
In this study, we highlight the potential of strain engineering in graphene/hBN (hexagonal Boron nitride) 2D heterostructures, enabling their use as wide-range light absorbers with significant implications for optoelectronic applications.…
The hybrid metal-dielectric nanostructures (HMDN) are promising candidates to address the ohmic loss by conventional nanostructures in photovoltaic applications by strong confinement and high scattering directivity. In this study, we…
Dilute nitride bismide GaNBiAs is a potential semiconductor alloy for near- and mid-infrared applications, particularly in 1.55 $\mu$m optical communication systems. Incorporating dilute amounts of Bismuth (Bi) into GaAs reduces the…
The attachment of semiconducting nanoparticles to carbon nanotubes is one of the most challenging subjects in nanotechnology. Successful high coverage attachment and control over the charge transfer mechanism and photo-current generation…
The optical and electrical properties of optically-thin one-dimensional (1D) Ag nanogratings and two-dimensional (2D) Ag nanogrids are studied, and their use as transparent electrodes in organic photovoltaics are explored. A large broadband…
Growing energy storage demands on lithium-ion batteries necessitate exploration of new electrochemical materials as next-generation battery electrode materials. In this work, we investigate the previously unexplored electrochemical…
The electronic band structure of complex nanostructured semiconductors has a considerable effect on the final electronic and optical properties of the material and, ultimately, on the functionality of the devices incorporating them. Valence…
Band gap tuning and dielectric properties of small organic ligands adsorbed on bidimensional germanium monolayers (germanene) have been investigated using first-principles calculations. We show that the adsorption of these small groups…
Zinc Oxide (ZnO) semiconductor is ideal candidates for ultra-violet (UV) photodetector due to its promising optoelectronic properties. Photodetectors based on ZnO nanostructures show very high photoconductivity under UV light, but they are…
The study uses AACVD technology with nitrogen carrier gas to make AZO thin films through which it determines structural, optical, and morphological changes from 0 to 20 percent aluminum doping. The depositions took place at 400 degrees…
Effect of ambient gases on photoluminescence (PL) and electrical conductivity of films prepared using ZnO nanoparticles (NPs) have been investigated. It is observed that NPs of size below 20 nm kept inside a chamber exhibit complete…
Novel materials with large electro-optic (EO) coefficients are essential for developing ultra-compact broadband modulators and enabling effective quantum transduction. Compared to lithium niobate, the most widely used nonlinear optical…
GaN based high electron mobility transistors show promise in numerous device applications which elicits the need for accurate models of bulk, surface, and interface electronic properties. We detail here a hybrid density functional theory…
In this paper, we study band-to-band and intersubband characteristics of GaN/AlN heterostructures (planar and nanowires) structurally designed to absorb in the short-wavelength infrared region, particularly at 1.55 microns. We compare the…
Electronic band structure and optical properties of zinc monochalcogenides with zinc-blende- and wurtzite-type structures were studied using the ab initio density functional method within the LDA, GGA, and LDA+U approaches. Calculations of…
Complex van der Waals heterostructures from layered molecular stacks are promising optoelectronic materials offering means to efficient, modular charge separation and collection layers. The effect of stacking in the electrodynamics of such…