Related papers: Enhanced visible light absorption in ZnO/GaN heter…
Adsorption of small ligands on semiconductor surfaces is a possible route to modify these surfaces so that they can be used in biosensing and optoelectronic devices. In this work we perform density-functional theory calculations of…
This study investigates optical and electrical properties of thin melanin films self-organized grown from water solutions of eumelanin extracted from edible plants. The melanin films exhibit the characteristics of a transparent low…
In this paper, we present the effects of high-energy Ni++ ion irradiation on the structural and optical properties of GaN films. Three different irradiation doses of 1013, 1014, and 1015 ions/cm2 were used while keeping the ion energy at…
This work studies the effect of four different types of buffer layers on the structural and optical properties of InGaN layers grown on Si(111) substrates and their correlation with electrical characteristics. The vertical electrical…
Recently synthesized two-dimensional graphene-like material referred to as graphenylene is a semiconductor with a narrow direct bandgap that holds great promise for nanoelectronic applications. The significant bandgap increase can be…
Gallium arsenide (GaAs) is the widest used second generation semiconductor with a direct band gap and increasingly used as nanofilms. However, the magnetic properties of GaAs nanofilms have never been studied. Here we find by comprehensive…
The ideal band gap for a photovoltaic active layer for the solar spectrum is around 1.3 eV. However oxides with such values are rare. One of the most studied oxides to date as a photovoltaic active layer is the cuprous oxide Cu2O. Its band…
This study presents a comprehensive simulation-based optimization of gallium nitride (GaN)-based metal-semiconductor-metal (MSM) photodetectors designed for ultraviolet (UV) applications. The proposed device architecture incorporates a…
Reversible control of the photoluminescence of ZnO occurring in the visible range, has been achieved by application of a few volts (< 5V) to a device consisting of nanostructured ZnO film sandwiched between Indium Tin Oxide electrode and…
In this manuscript, we report the results of optical properties of SnS thin films, deposited on FTO coated glass substrates at room temperature by thermal evaporation technique. In addition, the effect of film thickness on the optical…
The electronic structure of heterointerfaces play a pivotal role in their device functionality. Recently, highly crystalline ultrathin films of superconducting NbN have been integrated by molecular beam epitaxy with the semiconducting GaN.…
Topological insulator films are promising materials for optoelectronics due to a strong optical absorption and a thickness dependent band gap of the topological surface states. They are superior candidates for photodetector applications in…
Orthorhombic II-IV nitride semiconductors offer an expanded and more tunable material set with unique properties, while maintaining close compatibility with the wurtzite crystal structure of the III-nitrides. In particular, MgSiN2, a II-IV…
The ordered structure of MgO-ZnO alloy system is a versatile tunable optical material promising for diverse optoelectronic applications. However, isovalent and isostructural alloy compositions of MgO-ZnO are generally unstable at ambient…
Point defects in Ga- and Al-doped ZnO thin films are studied by means of first principles electronic structure calculations. Candidate defects are identified to explain recently observed differences in electrical and spectroscopical…
The optical absorption of nanoscale thickness semiconductor films on top of light-trapping structures based on optical interference effects combined with spectrum-splitting structures is theoretically investigated. Nearly perfect absorption…
A theoretical study of Al(1-x)Ga(x)N, based on full-potential linearized augmented plane wave method, is used to investigate the variations in the bandgap, optical properties and non-linear behavior of the compound with the variation of Ga…
A functionally graded Al-doped ZnO structure is presented which combines conductivity, visible transparency and light scattering with mechanical flexibility. The nano and meso-architecture, constituted by a hierarchical, large surface area,…
This work presents a cost-effective alternative technology for the formation of nanostructured semiconductor materials for tunable light emitting devices. CdS and ZnS semiconducting colloid nanoparticles coated with organic shell,…
Transition metal aluminum nitrides are a technologically important class of multifunctional ceramics, however, the HfAlN system remains largely unexplored. We investigate phase stability, nanostructure design, and mechanical behavior of…