Related papers: Practical Demonstration of a Memristive Fuse
A memristor is an electrical element, which has been conjectured in 1971 to complete the lumped circuit theory. Currently, researchers use memristors emulators through diodes and other passive (or active) elements to study circuits with…
The new emerging non-volatile memory (NVM) devices known as memristors could be the promising candidate for future digital architecture, owing to their nanoscale size and its ability to integrate with the exciting CMOS technology. In this…
Emerging non-volatile memories (NVMs) have currently attracted great interest for their potential applications in advanced low-power information storage and processing technologies. Conventional NVMs, such as magnetic random access memory…
Different real-world cognitive tasks evolve on different relevant timescales. Processing these tasks requires memory mechanisms able to match their specific time constants. In particular, the working memory utilizes mechanisms that span…
Compact models of memristors are essential for simulating large-scale neuromorphic systems, yet they often do not include description of complex dynamics like volatile relaxation and synaptic plasticity. We introduce a modular,…
Spin-torque memristors were proposed in 2009, which could provide fast, low-power and infinite memristive behavior for large-density non-volatile memory and neuromorphic computing. However, the strict requirements of combining high…
Computation-in-Memory (CiM) is attracting attention as a technology that can perform MAC calculations required for AI accelerators, at high speed with low power consumption. However, there is a problem regarding power consumption and…
Usually, resistive switching (RS) devices show digital RS memory (sharp SET and RESET process), which is most suitable for digital data storage applications. Some RS devices also manifest ideal memristive behavior or analog memory…
Controlled bipolar resistive switching (BRS) has been observed in nanostructured CoFe2O4 films using Al(aluminum)/CoFe2O4/FTO(fluorine-doped tin oxide) device. The fabricated device shows electroforming-free uniform BRS with two clearly…
Functional Electrical Stimulation (FES) systems are successful in restoring motor function and supporting paralyzed users. Commercially available FES products are open loop, meaning that the system is unable to adapt to changing conditions…
As data-intensive applications increasingly strain conventional computing systems, processing-in-memory (PIM) has emerged as a promising paradigm to alleviate the memory wall by minimizing data transfer between memory and processing units.…
In-memory computing is an emerging non-von Neumann computing paradigm where certain computational tasks are performed in memory by exploiting the physical attributes of the memory devices. Memristive devices such as phase-change memory…
We have measured the transition process from the high to low resistivity states, i.e., the reset process of resistive switching based memristors based on Ni/HfO2/Si-n+ structures, and have also developed an analytical model for their…
Reading several ReRAMs simultaneously in a neuromorphic circuit increases power consumption and limits scalability. Applying small inference read pulses is a vain attempt when offset voltages of the read-out circuit are decisively more.…
Memristive systems were proposed in 1976 by Leon Chua and Sung Mo Kang as a model for 2-terminal passive nonlinear dynamical systems which exhibit memory effects. Such systems were originally shown to be relevant to the modeling of action…
A simple and unambiguous test has been recently suggested [J. Phys. D: Applied Physics, 52, 01LT01 (2018)] to check experimentally if a resistor with memory is indeed a memristor, namely a resistor whose resistance depends only on the…
Memristors, initially introduced in the 1970s, have received increased attention upon successful synthesis in 2008. Considerable work has been done on modeling and applications in specific areas, however, very little is known on the…
The stochastic resonance phenomenon has been studied experimentally and theoretically for a state-of-art metal-oxide memristive device based on yttria-stabilized zirconium dioxide and tantalum pentoxide, which exhibits bipolar filamentary…
Heterogeneous systems with analog CMOS circuits integrated with nanoscale memristive devices enable efficient deployment of neural networks on neuromorphic hardware. CMOS Neuron with low footprint can emulate slow temporal dynamics by…
Reconfigurable Intelligent Surface (RIS) is a promising solution to reconfigure the wireless environment in a controllable way. To compensate for the double-fading attenuation in the RIS-aided link, a large number of passive reflecting…