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Related papers: Pseudodoping of Metallic Two-Dimensional Materials

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How to electrically control magnetic properties of a magnetic material is promising towards spintronic applications, where the investigation of carrier doping effects on antiferromagnetic (AFM) materials remains challenging due to their…

Recent ARPES measurements of single-layer 1H-TaS2 grown on Au(111) suggest strong electron doping from the substrate. In addition, STM/STS measurements on this system show suppression of the charge-density-wave (CDW) instability that occurs…

Materials Science · Physics 2017-06-21 Oliver R. Albertini , Amy Y. Liu , Matteo Calandra

We investigate strong-coupling properties of a two-dimensional ultracold Fermi gas in the normal phase. In the three-dimensional case, it has been shown that the so-called pseudogap phenomena can be well described by a (non-self-consistent)…

Quantum Gases · Physics 2016-10-31 Morio Matsumoto , Ryo Hanai , Daisuke Inotani , Yoji Ohashi

A comparative study of the electrical and optical properties has been done on 3d-doped TiO$_2$. Ti$_{1-x}$M$_x$O$_2$ (M= Sc, V, Cr, Mn, Fe, Co, Ni, Cu, Zn) powder and its corresponding pellets, with doping concentration $x= 0.05$. The…

Materials Science · Physics 2022-10-24 Shashi Pandey , Alok Shukla , Anurag Tripathi

Doping plays a key role in functionalizing semiconductor devices, yet traditional chemical approaches relying on foreign-atom incorporation suffer from doping-asymmetry, pronounced lattice disorder and constrained spatial resolution. Here,…

Materials Science · Physics 2025-05-12 Bo Zhang , Hui Xia , Zhengdong Huang , Yaqian Liu , Jun Kang , Liaoxin Sun , Tianxin Li , Su-Huai Wei , Wei Lu

Photo-doping of Mott insulators or correlated metals can create an unusual metallic state which simultaneously hosts hole-like and electron-like particles. We study the dynamics of this state up to long times, as it passes its kinetic…

Strongly Correlated Electrons · Physics 2021-05-26 Nagamalleswararao Dasari , Jiajun Li , Philipp Werner , Martin Eckstein

Doping asymmetry is a notable phenomenon with semiconductors and a particularly longstanding challenge limiting the applications of most wide-band-gap semiconductors, which are inherent of spontaneous heavy n- or p-type doping because of…

Materials Science · Physics 2023-07-14 Kai Liu , Zhibin Yi , Guangfu Luo

We investigate the thermoelectric propeties of the electron-doped FeAs$_2$ both experimentally and theoretically. Electrons are doped by partially substituting Se for As, which leads to a metallic behavior in the resistivity. A Seebeck…

Materials Science · Physics 2013-09-06 Hidetomo Usui , Kazuhiko Kuroki , Seiya Nakano , Kazutaka Kudo , Minoru Nohara

Bi2Sr2CaCu2O{8 + \delta} crystals with varying hole concentrations (0.12 < p < 0.23) were studied to investigate the effects of doping on the symmetry and magnitude of the superconducting gap. Electronic Raman scattering experiments that…

Superconductivity · Physics 2009-10-31 K. C. Hewitt , J. C. Irwin

We have studied the structural and electronic properties of Mg(1-x)Al(x)B2 within the Virtual Crystal Approximation (VCA) by means of first-principles total-energy calculations. Results for the lattice parameters, the electronic band…

Superconductivity · Physics 2009-11-07 O. de la Pena , A. Aguayo , R. de Coss

A superstructure can elicit versatile new properties of materials by breaking their original geometrical symmetries. It is an important topic in the layered graphene-like two-dimensional transition-metal dichalcogenides (TMDs), but its…

A combined experimental and theoretical study of doping individual Fe atoms into Bi2Se3 is presented. It is shown through a scanning tunneling microscopy study that single Fe atoms initially located at hollow sites on top of the surface…

This work investigates how site-specific doping can enhance the thermoelectric performance of tetragonal Cu$_{2}$S using Density functional Theory and Projected Atomic Orbital Framework for Electronic Transport. We address the gap in…

Materials Science · Physics 2025-01-29 Sonam Phuntsho

Influence of two type of spin structures on the form of the Fermi surface (FS) and a photoemission intensity map is studied for t-t'-U Hubbard model. Mean field calculations are done for the stripe phase and for the spiral spin structure.…

Strongly Correlated Electrons · Physics 2015-06-24 A A Ovchinnikov , M Ya Ovchinnikova

Electronic interactions in multiorbital systems lead to non-trivial features in the optical spectrum. In iron superconductors the Drude weight is strongly suppressed with hole-doping. We discuss why the common association of the…

Strongly Correlated Electrons · Physics 2014-09-22 M. J. Calderón , L. de' Medici , B. Valenzuela , E. Bascones

We report $^{75}$As NMR measurements in BaFe$_2$As$_2$ doped with Ni. Like Co, Ni doping suppresses the antiferromagnetic and structural phase transitions and gives rise to superconductivity for sufficiently large Ni doping. The spin…

Strongly Correlated Electrons · Physics 2010-11-08 A. P. Dioguardi , N. apRoberts-Warren , A. C. Shockley , S. L. Bud'ko , N. Ni , P. C. Canfield , N. J. Curro

Heusler alloys containing Co and Mn are amongst the most heavily studied half-metallic ferromagnets for future applications in spintronics. Using state-of-the-art electronic structure calculations, we investigate the effect of doping and…

Materials Science · Physics 2009-11-11 I. Galanakis , K. Ozdogan , E. Sasioglu , B. Aktas

In metal/degenerately doped silicon bilayer structure, the interfacial flexoelectric effect due to strain gradient leads to charge carrier transfer from metal layer to the silicon layer. This excess charge carrier concentration is called…

The effect of Fe doping in the Mn site on the magnetic, transport and structural properties of polycrystalline La1/2Ca1/2MnO3 was studied. Doping with low Fe concentration (< 10%) strongly affects electrical transport and magnetization.…

Materials Science · Physics 2016-08-31 P. Levy , L. Granja , E. Indelicato , D. Vega , G. Polla , F. Parisi

Two common difficulties in the design of topological quantum materials are that the desired features lie too far from the Fermi level and are spread over a too-large energy range. Doping-induced states at the Fermi level provide a solution,…

Mesoscale and Nanoscale Physics · Physics 2025-01-31 Moritz M. Hirschmann , Johannes Mitscherling