Related papers: Spin-polarized quasiparticle tunneling in spin-fil…
Two-dimensional (2D) crystals, such as graphene, hexagonal boron nitride and transitional metal dichalcogenides, have attracted tremendous amount of attention over the past decade due to their extraordinary thermal, electrical and optical…
Spin polarization of the tunnel conductivity has been studied for Fe/GaAs junctions with Schottky barriers. It is shown that band matching of resonant interface states within the Schottky barrier defines the sign of spin polarization of…
We undertook an ab-initio study of hexagonal boron nitride (hBN) sandwiched between Ni(111) layers to examine the interface of this material structure. We considered Ni(111)/hBN/Ni(111) with a slab with three Ni atomic layers to determine…
Spin-selective tunneling of holes in SiGe nanocrystals contacted by normal-metal leads is reported. The spin selectivity arises from an interplay of the orbital effect of the magnetic field with the strong spin-orbit interaction present in…
We propose the use of resonant tunneling as a route to enhance the spin-transfer torque switching characteristics of magnetic tunnel junctions. The proposed device structure is a resonant tunneling magnetic tunnel junction based on a…
We demonstrate that due to their spin-orbit interaction carbon nanotube cross-junctions have attractive spin projective properties for transport. First, we show that the junction can be used as a versatile spin filter as a function of a…
We propose a device acting as a spin valve which is based on a double quantum dot structure with parallel topology. Using the exact analytical solution for the noninteracting case we argue that, at a certain constellation of system…
We have experimentally and theoretically investigated the spin injection/detection polarization in a Si-based ferromagnetic tunnel junction with an amorphous MgO layer, and demonstrated that the experimental features of the spin…
In the quest for reliable and power-efficient memristive devices, ferroelectric tunnel junctions are being investigated as potential candidates. CMOS-compatible ferroelectric hafnium oxides are at the forefront. However, in epitaxial tunnel…
A vertical resonant tunneling diode (RTD) based on the paramagnetic Zn1-x-yMnyCdxSe system has been fabricated with a pillar diameter down to ~ 6 micron. The diode exhibits high quality resonant tunneling characteristics through the…
There is currently much interest in materials and structures that provide coupled ferroelectric and ferromagnetic responses, with a long-term goal of developing new memories and spintronic logic elements. Within the field there is a focus…
Nanopillar spin valve devices are typically comprised of two ferromagnetic layers: a reference layer and a free layer whose magnetic orientation can be changed by both an external magnetic field and through the introduction of…
We present a design-scheme for ultra-low power neuromorphic hardware using emerging spin-devices. We propose device models for 'neuron', based on lateral spin valves and domain wall magnets that can operate at ultra-low terminal voltage of…
We point out in this short communique, that be it a s-wave or d-wave superconductor, in a non equalibrium situation(i.e. in presence of excess unpolarised/polarised quasi-particles maintained by an injection current) the superconducting gap…
We use self-consistent quantum transport theory to investigate the influence of electron-electron interactions on interlayer transport in semiconductor electron bilayers in the absence of an external magnetic field. We conclude that, even…
An important consequence of the discovery of giant magnetoresistance in metallic magnetic multilayers is a broad interest in spin dependent effects in electronic transport through magnetic nanostructures. An example of such systems are…
Antiferromagnetic spintronics offers the potential for higher-frequency operations and improved insensitivity to magnetic fields compared to ferromagnetic spintronics. However, previous electrical techniques to detect antiferromagnetic…
The study of superconductor-ferromagnet interfaces has generated great interest in the last decades, leading to the observation of spin-aligned triplet supercurrents and 0-pi transitions in Josephson junctions where two superconductors are…
The difference in the density of states for up- and down-spin electrons in a ferromagnet (F) results in spin-dependent scattering of electrons at a ferromagnet / nonmagnetic (F/N) interface. In a F/N/F spin-valve, this causes a…
We propose and theoretically analyze a novel metal-oxide-semiconductor field-effect-transistor (MOSFET) type of spin transistor (hereafter referred to as a spin MOSFET) consisting of a MOS gate structure and half-metallic-ferromagnet (HMF)…