Related papers: Monte Carlo analysis of a lateral IBIC experiment …
The Ion Beam Induced Charge Collection (IBIC) technique was used to map the charge collection efficiency (CCE) of a 4H-SiC photodetector with coplanar interdigitated Schottky barrier electrodes and a common ohmic contact on the back side.…
We report findings on the Ion Beam Induced Charge (IBIC) characterization of a 4H-SiC Schottky barrier diode (SBD), in terms of the modification of the Charge Collection Efficiency (CCE) distribution induced by 20 MeV C ions irradiations…
In order to evaluate the charge collection efficiency (CCE) profile of single-crystal diamond devices based on a p type/intrinsic/metal configuration, a lateral Ion Beam Induced Charge (IBIC) analysis was performed over their cleaved cross…
In a multi-electrode device, the motion of free charge carriers generated by ionizing radiation induces currents on all the electrodes surrounding the active region [1]. The amount of charge induced in each sensitive electrode is a function…
This paper describes both an experimental methodology based on the Ion Beam Induced Charge (IBIC) technique and the relevant interpretative model, which were adopted to characterize the electronic features of power diodes. IBIC spectra were…
The ion beam-induced charge (IBIC) analysis of a commercial silicon photodiode configured as a Position Sensitive Detector (PSD) for energetic charged particles is the subject of this report. Although the photodiode is designed for…
The Ion Beam Induced Charge (IBIC) technique is widely used to characterize the electronic properties of semiconductor materials and devices. Its main advantage over other charge collection microscopies stems in the use of MeV ion probes,…
The acronym IBIC (Ion Beam Induced Charge) was coined in early 1990's to indicate a scanning microscopy technique which uses MeV ion beams as probes to image the basic electronic properties of semiconductor materials and devices. Since…
In this work, a single crystal CVD diamond film with a novel three-dimensional (3D) interdigitated electrode geometry has been fabricated with the Reactive Ion Etching (RIE) technique in order to increase the charge collection efficiency…
Deep Ion Beam Lithography (DIBL) has been used for the direct writing of buried graphitic regions in monocrystalline diamond with micrometric resolution. Aiming at the development and the characterization of a fully ion-beam-micromachined…
Due to the increased commercial availability, wide-bandgap semiconductors and their radiation hardness have recently received increased interest from the particle physics community. 4H-Silicon Carbide (SiC), especially, is an attractive…
We present a numerically exact study of charge transport and its fluctuations through a molecular junction driven out of equilibrium by a bias voltage, using the Inchworm quantum Monte Carlo (iQMC) method. After showing how the technique…
Silicon carbide (SiC) is a wide band gap semiconductor and an attractive candidate for applications in harsh environments such as space, fusion, or future high luminosity colliders. Due to the large band gap, the leakage currents in SiC…
We present a new algorithm for radiative transfer-based on a statistical Monte Carlo approach-that does not suffer from teleportation effects, on the one hand, and yields smooth results, on the other hand. Implicit Monte Carlo (IMC)…
Electron beam induced current (EBIC) is a powerful technique which measures the charge collection efficiency of photovoltaics with sub-micron spatial resolution. The exciting electron beam results in a high generation rate density of…
We present direct imaging measurements of charge transport across a 1 cm x 1 cm x 4 mm-thick crystal of high purity silicon ($\sim$15 k$\Omega$-cm) at temperatures of 5 K and 500 mK. We use these data to measure the lateral diffusion of…
Path integral Monte Carlo (PIMC) simulations are used to calculate the momentum distribution of the homogeneous electron gas at finite temperature. This is done by calculating the off-diagonal elements of the real-space density matrix,…
The high field charge injection and transport properties in reinforced silicone dielectrics were investigated by measuring the time-dependent space charge distribution and the current under dc conditions up to the breakdown field, and were…
We report on a new capability added to our general relativistic radiation-magnetohydrodynamics code, Cosmos++: an implicit Monte Carlo (IMC) treatment for radiation transport. The method is based on a Fleck-type implicit discretization of…
In this work, we will present a physical model and measurements of the transport of small charge packets in the bulk of thick high resistivity CCD before being collected by the pixel potential wells. A new technique to measure the lateral…