Related papers: Strain-induced spin resonance shifts in silicon de…
Electrically addressing spin systems is predicted to be a key component in developing scalable semiconductor-based quantum processing architectures, to enable fast spin qubit manipulation and long-distance entanglement via microwave…
It is shown that coherent spin motion of electron-hole pairs localized in band gap states of silicon can influence charge carrier recombination. Based on this effect, a readout concept for silicon based solid-state spin--quantum computers…
We demonstrate that the spin of optically addressable point defects can be coherently driven with AC electric fields. Based on magnetic-dipole forbidden spin transitions, this scheme enables spatially confined spin control, the imaging of…
The size of silicon transistors used in microelectronic devices is shrinking to the level where quantum effects become important. While this presents a significant challenge for the further scaling of microprocessors, it provides the…
Vanadium in silicon carbide is a promising spin photon interface candidate with optical transitions in the telecom range and a long lived electron spin, hosted in an advanced semiconductor platform. In this detailed investigation of the…
We report on electron spin resonance spectroscopy measurements using a superconducting flux qubit with a sensing volume of 6 fl. The qubit is read out using a frequency-tunable Josephson bifurcation amplifier, which leads to an inferred…
In magnetic materials, skyrmions are nanoscale regions where the orientation of electron spin changes in a vortex-type manner. Here we show that spin-orbit coupling in a focused vector beam results in a skyrmion-like photonic spin…
We consider electronic current transport through a ballistic one-dimensional quantum wire connected to two ferromagnetic leads. We study the effects of the spin-dependence of interfacial phase shifts (SDIPS) acquired by electrons upon…
Silicon is undoubtedly one of the most promising semiconductor materials for spin-based information processing devices. Its highly advanced fabrication technology facilitates the transition from individual devices to large-scale processors,…
Silicon vacancy (VSi) centers in 4H silicon carbide have emerged as a highly promising platform for semiconductor-based quantum technologies, combining excellent spin and optical properties with an industrial-grade, CMOS-compatible…
A theoretical spin-based scheme for performing a variety of quantum computations is presented. It makes use of an array of multiple identical computer vectors of phosphorus-doped silicon where the nuclei serve as logical qubits and the…
Decoherence of a shallow donor electron spin in silicon caused by electron-lattice interaction is studied. We find that there are two time scales associated with the evolution of the electron spin density matrix: the fast but incomplete…
We report electron spin resonance (ESR) measurements on a large-area silicon MOSFET. An ESR signal at g-factor 1.9999(1), and with a linewidth of 0.6 G, is observed and found to arise from two-dimensional (2D) electrons at the Si/SiO2…
Mechanical resonators operating in the high-frequency regime have become a versatile platform for fundamental and applied quantum research. Their exceptional properties, such as low mass and high quality factor, make them also very…
A theory for the relation between the spin polarization and luminescence in silicon is presented. The theory provides intuitive relations for phonon-assisted optical transitions between the conduction and valence band edges. It is shown…
Spin defects in silicon carbide have exceptional electron spin coherence with a near-infrared spin-photon interface in a material amenable to modern semiconductor fabrication. Leveraging these advantages, we successfully integrate highly…
Spin-dependent transport is investigated in ballistic regime through the interface between a ferromagnet and a spin spiral. We show that spin-dependent interferences lead to a new type of diffraction called "spin-diffraction". It is shown…
Spin fluctuations are a leading candidate for the pairing mechanism in high temperature superconductors, supported by the common appearance of a distinct resonance in the spin susceptibility across the cuprates, iron-based superconductors…
Electron spins in semiconductor quantum dots are good candidates of quantum bits for quantum information processing. Basic operations of the qubit have been realized in recent years: initialization, manipulation of single spins, two qubit…
We explore the effects of stress on silicon donor bound exciton ($\mathrm{D^0X}$) transitions in bulk silicon and in microfabricated silicon devices. We first study $\mathrm{D^0X}$ transitions in an isotopically purified silicon-28 bulk…