Related papers: A gate-variable spin current demultiplexer based o…
The tuning of electrical circuit resonance with a variable capacitor, or varactor, finds wide application with the most important being wireless telecommunication. We demonstrate an electromechanical graphene varactor, a variable capacitor…
We theoretically investigate the spin-dependent transport for the system of an armchair-edge graphene nanoribbon (AGNR) between two ferromagnetic (FM) leads with arbitrary polarization directions at low temperatures, where a magnetic…
We investigate the electronic transport in graphene nanoelectromechanical resonators (GrNEMS), known also as graphene nanodrums or nanomembranes. We demonstrate that these devices, despite small values of out-of-plane strain, between $0.1$…
A diode, a device allowing unidirectional signal transmission, is a fundamental element of logic structures and lies in the heart of modern information systems. Spin wave or magnon, representing a collective quasi-particle excitation of the…
Spin relaxation, dephasing and diffusion are at the heart of spin-based information technology. Accurate theoretical approaches to simulate spin lifetimes ($\tau_s$), determining how fast the spin polarization and phase information will be…
The damping of spin waves parametrically excited in the magnetic insulator Yttrium Iron Garnet (YIG) is controlled by a dc current passed through an adjacent normal-metal film. The experiment is performed on a macroscopically sized…
We calculate the spin relaxation time of mobile electrons due to spin precession between random impurity scattering (D'yakonov-Perel' mechanism) in electrically gated bilayer graphene analytically and numerically. Due to the trigonal…
A two-dimensional gas of massless Dirac fermions (MDFs) is a very useful model to describe low-energy electrons in monolayer graphene. Because the MDF current operator is directly proportional to the (sublattice) pseudospin operator, the…
We theoretically propose the long-range spin transport mediated by the gapless surface states of topological Dirac semimetal (TDSM). Low-dissipation spin current is a building block of next-generation spintronics devices. While conduction…
The observation of micron size spin relaxation makes graphene a promising material for applications in spintronics requiring long distance spin communication. However, spin dependent scatterings at the contact/graphene interfaces affect the…
Graphene based transistors relying on a conventional structure cannot switch properly because of the absence of an energy gap in graphene. To overcome this limitation, a barristor device was proposed, whose operation is based on the…
We use an aluminium single electron transistor with a magnetic gate to directly quantify the chemical potential anisotropy of GaMnAs materials. Uniaxial and cubic contributions to the chemical potential anisotropy are determined from field…
We treat the spin injection and extraction via a ferromagnetic metal/semiconductor Schottky barrier as a quantum scattering problem. This enables the theory to explain a number of phenomena involving spin-dependent current through the…
Organic and carbon-based materials are attractive for spintronics because their small spin-orbit coupling and low hyperfine interaction is expected to give rise to large spin-relaxation times. However, the corresponding spin-relaxation…
Exploiting 2D materials for spintronic applications can potentially realize next-generation devices featuring low-power consumption and quantum operation capability. The magnetic exchange field (MEF) induced by an adjacent magnetic…
Further development of the field of all-electric spintronics requires the successful integration of spin transport channels with spin injector/generator elements. While with the advent of graphene and related 2D materials high performance…
Electron fully spin-polarized edge states in graphene emerged at the interfaces of a nonuniform magnetic field are studied numerically in a tight-binding model, with both the orbital and Zeeman-splitting effects of magnetic field…
We show that graphene with Mn adatoms trapped at single vacancies feature spin-dependent Seebeck effect, thus enabling the use of this material for spin caloritronics. A gate potential can be used to tune its thermoelectric properties in a…
Graphene is hailed as an ideal material for spintronics due to weak intrinsic spin-orbit interaction that facilitates lateral spin transport and tunability of its electronic properties, including a possibility to induce magnetism in…
We show within a local self-consistent mean-field treatment that a random distribution of magnetic adatoms can open a robust gap in the electronic spectrum of graphene. The electronic gap results from the interplay between the nature of the…