Related papers: A gate-variable spin current demultiplexer based o…
After the first unequivocal demonstration of spin transport in graphene (Tombros et al., 2007), surprisingly at room temperature, it was quickly realized that this novel material was relevant for both fundamental spintronics and future…
We investigate spin transport through ferromagnetic graphene vertical heterostructures where a sandwiched tunneling layer is either a normal or ferroelectric insulator. We show that the spin-polarization of the tunneling current is…
Graphene-based Josephson junctions played an important role in various quantum devices from their inception. Magnetic tunnel junctions or vertical devices were also made out of graphene by exposing the graphene layer to localised pattern of…
We report on graphene-passivated ferromagnetic electrodes (GPFE) for spin devices. GPFE are shown to act as spin-polarized oxidation-resistant electrodes. The direct coating of nickel with few layer graphene through a readily scalable…
Through First-Principles real-time Density-Matrix (FPDM) dynamics simulations, we investigate spin relaxation due to electron-phonon and electron-impurity scatterings with spin-orbit coupling in two-dimensional Dirac materials - silicene…
This is a review on graphene quantum dots and their use as a host for spin qubits. We discuss the advantages but also the challenges to use graphene quantum dots for spin qubits as compared to the more standard materials like GaAs. We start…
A new spin based logic device is proposed. It is comprised of a common free ferromagnetic layer separated by a tunnel junction from three inputs and one output with separate fixed layers. It has the functionality of a majority gate and is…
A theory of the proximity effects of the exchange splitting in a ferromagnetic metal on a two dimensional electron gas (2DEG) in a semiconductor is presented. The resulting spin-dependent energy and lifetime in the 2DEG create a marked…
We investigate spin and charge transport in both single and bilayer graphene non-local spin-valve devices. Similar to previous studies on bilayer graphene, we observe an inverse dependence of the spin lifetime on the carrier mobility in our…
Graphene and bilayer graphene quantum dots are promising hosts for spin qubits with long coherence times. Although recent technological improvements make it possible to confine single electrons electrostatically in bilayer graphene quantum…
Strain engineering is a promising approach for suppressing the OFF-state conductance in graphene-based devices that arises from Klein tunnelling. In this work, we derive a comprehensive tight-binding Hamiltonian for strained graphene that…
we have fabricated transparent electronic devices based on graphene materials with thickness down to one single atomic layer by the transfer printing method. The resulting printed graphene devices retain high field effect mobility and have…
The gate-controllable complex conductivity of graphene offers unprecedented opportunities for reconfigurable plasmonics at THz and mid-IR frequencies. However, the requirement of a gating electrode close to graphene and the single `control…
The demonstration of the generation and control of a pure spin current (without net charge flow) by electric fields and/or temperature gradient has been an essential leap in the quest for low-power consumption electronics. The key issue of…
Spin-orbit effects [1-4] have the potential of radically changing the field of spintronics by allowing transfer of spin angular momentum to a whole new class of materials. In a seminal letter to Nature [5], Kajiwara et al. showed that by…
Spin-based logic devices could operate at very high speed with very low energy consumption and hold significant promise for quantum information processing and metrology. Here, an in-house developed, experimentally verified, ensemble…
A graphene field effect transistor, where the active area is made of monolayer large-area graphene, is simulated including a full 2D Poisson equation and a drift-diffusion model with mobilities deduced by a direct numerical solution of the…
Electron transport in graphene is along the sheet but junction devices are often made by stacking different sheets together in a "side-contact" geometry which causes the current to flow perpendicular to the sheets within the device. Such…
We propose a new method to use gapped graphene as barrier to confine electrons in gapless graphene and form a good quantum dot, which can be realized on an oxygen-terminated $SiO_{2}$ substrate partly H-passivated. In particular, we use…
Spin transport electronics - spintronics - focuses on utilizing electron spin as a state variable for quantum and classical information processing and storage. Some insulating materials, such as diamond, offer defect centers whose…