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We report a transport, thermodynamic, and spectroscopic study of the recently identified topological semiconductor ZrTe$_5$ with a focus on elucidating the connections between its band structure and unusual thermoelectric properties. Using…

Materials Science · Physics 2023-03-22 Junbo Zhu , Changmin Lee , Fahad Mahmood , Takehito Suzuki , Shiang Fang , Nuh Gedik , Joseph G. Checkelsky

The topological edge states of two-dimensional topological insulators with large energy gap furnish ideal conduction channels for dissipationless current transport. Transition metal tellurides XTe5 (X=Zr, Hf) are theoretically predicted to…

Topological insulators (TIs) are an important family of quantum materials that exhibit a Dirac point (DP) in the surface band structure but have a finite band gap in bulk. A large degree of spin-orbit interaction and low bandgap is a…

Materials Science · Physics 2024-02-22 Thomas K. Reid , S. Pamir Alpay , Alexander V. Balatsky , Sanjeev K. Nayak

Topological insulators are characterized by spin-momentum-locked massless surface states which are robust under various perturbations. Manipulating such surface states is a topic of vigorous research, as a possible route for the realization…

Topological insulators (TIs) are a class of materials characterized by an insulting bulk and high mobility topologically protected surface states, making them promising candidates for future optoelectronic and quantum devices. Although…

The first experimental evidence is presented of the topological insulator state in PbBi$_{2}$Te$_{4}$. A single surface Dirac cone is observed by angle-resolved photoemission spectroscopy (ARPES) with synchrotron radiation. Topological…

We discuss the ultrafast evolution of the surface electronic structure of the topological insulator Bi$_2$Te$_3$ following a femtosecond laser excitation. Using time and angle resolved photoelectron spectroscopy, we provide a direct…

When electrons are subject to a large external magnetic field, the conventional charge quantum Hall effect \cite{Klitzing,Tsui} dictates that an electronic excitation gap is generated in the sample bulk, but metallic conduction is permitted…

Mesoscale and Nanoscale Physics · Physics 2009-10-14 D. Hsieh , D. Qian , L. Wray , Y. Xia , Y. S. Hor , R. J. Cava , M. Z. Hasan

We report a systematic angle-resolved photoemission spectroscopy on topological insulator (TI) TlBi1-xSbxTe2 which is bulk insulating at 0.5 < x < 0.9 and undergoes a metal-insulator-metal transition with the Sb content x. We found that…

Mesoscale and Nanoscale Physics · Physics 2016-06-28 Chi Xuan Trang , Zhiwei Wang , Keiko Yamada , Seigo Souma , Takafumi Sato , Takashi Takahashi , Kouji Segawa , Yoichi Ando

As one of the most important n-type thermoelectric (TE) materials, Bi2Te3 has been studied for decades, with efforts to enhance the thermoelectric performance based on element doping, band engineering, etc. In this study, we report a novel…

Tensile strained bulk HgTe is a three-dimensional topological insulator. Because of the energetic position of its surface state Dirac points relative to its small bulk gap, the electronic properties of the relatively thin MBE-grown films…

Mesoscale and Nanoscale Physics · Physics 2018-04-06 Jihang Zhu , Chao Lei , Allan H. MacDonald

In this Letter we present scanning tunneling microscopy density-of-states measurements and electronic structure calculations of the topological insulator Bi2Se3. The measurements show significant background states in addition to the…

Mesoscale and Nanoscale Physics · Physics 2015-06-11 Megan Romanowich , Mal-Soon Lee , Duck-Young Chung , Jung-Hwan Song , S. D. Mahanti , Mercouri G. Kanatzidis , Stuart H. Tessmer

Based on first-principles calculations, we show that stoichiometric TaSe3, synthesized in space group P21/m, belongs to a three-dimensional (3D) strong topological insulator (TI) phase with Z2 invariants (1;100). The calculated surface…

Materials Science · Physics 2018-11-07 Simin Nie , Lingyi Xing , Rongying Jin , Weiwei Xie , Zhijun Wang , Fritz B. Prinz

Materials with strong spin-orbit coupling have attracted attention following the prediction and subsequent discovery of strong two- and three-dimensional topological insulators in which a topological property of the bulk band structure of…

Recent theoretical calculations and experimental results suggest that the strongly correlated material SmB$_{6}$ may be a realization of a topological Kondo insulator. We have performed an angle-resolved photoemission spectroscopy study on…

Strongly Correlated Electrons · Physics 2013-09-11 N. Xu , X. Shi , P. K. Biswas , C. E. Matt , R. S. Dhaka , Y. Huang , N. C. Plumb , M. Radovic , J. H. Dil , E. Pomjakushina , A. Amato , Z. Salman , D. McK. Paul , J. Mesot , H. Ding , M. Shi

Topological insulators represent a new quantum state of matter which is characterized by peculiar edge or surface states that show up due to a topological character of the bulk wave functions. This review presents a pedagogical account on…

Materials Science · Physics 2013-09-04 Yoichi Ando

ZrTe5 is a highly tunable, high-mobility topological material that hosts a rich variety of quantum phenomena, making it a promising platform for next-generation quantum technologies. Despite intensive research efforts, experimental studies…

We have performed angle-resolved photoemission spectroscopy on Tl0.5Bi2Te3, a possible topological superconductor derived from Bi2Te3. We found that the bulk Fermi surface consists of multiple three-dimensional hole pockets surrounding the…

Superconductivity · Physics 2016-06-28 C. X. Trang , Z. Wang , D. Takane , K. Nakayama , S. Souma , T. Sato , T. Takahashi , A. A. Taskin , Yoichi Ando

Recently, log-periodic quantum oscillations have been detected in topological materials zirconium pentatelluride (ZrTe5) and hafnium pentatelluride (HfTe5), displaying intriguing discrete scale invariance (DSI) characteristic. In condensed…

Topological insulator (TI) materials such as Bi2Te3 and Bi2Se3 have attracted strong recent interests. Large scale, high quality TI thin films are important for developing TI-based device applications. In this work, structural and…