Related papers: Antiferromagnetic multi-level memory cell
Manipulation of tunneling spin-polarized electrons via a ferroelectric interlayer sandwiched between two ferromagnetic electrodes, dubbed Multiferroic Tunnel Junctions (MFTJs), can be achieved not only by the magnetic alignments of two…
Antiferromagnets have been generating intense interest in the spintronics community, owing to their intrinsic appealing properties like zero stray field and ultrafast spin dynamics. While the control of antiferromagnetic (AFM) orders has…
Memristors are emerging as key electronic components that retain resistance states without power. Their non-volatile nature and ability to mimic synaptic behavior make them ideal for next-generation memory technologies and neuromorphic…
Spiking artificial neurons emulate the voltage spikes of biological neurons, and constitute the building blocks of a new class of energy efficient, neuromorphic computing systems. Antiferromagnetic materials can, in theory, be used to…
Two-dimensional (2D) multiferroic materials with controllable magnetism have promising prospects in miniaturized quantum device applications, such as high-density data storage and spintronic devices. Here, using first-principles…
Magnons, bosonic quasiparticles carrying angular momentum, can flow through insulators for information transmission with minimal power dissipation. However, it remains challenging to develop a magnon-based logic due to the lack of efficient…
The majority of recent works devoted to spin nematic phases deal with either frustrated magnets or with those described by Hamiltonians with large non-Heisenberg terms. We show in the present study that nonfrustrated antiferromagnets (AFs)…
Recent results in electric-field control of magnetism have paved the way for the design of alternative magnetic and spintronic devices with enhanced functionalities and low power consumption. Among the diversity of reported magnetoelectric…
Due to the advent of antiferromagnetic (AF) spintronics there is a burgeoning interest in AF materials for a wide range of potential and actual applications. Generally, AFs are characterized via the ordering at the Neel temperature (TN)…
Spin-electronic devices are poised to become part of mainstream microelectronic technology .Downsizing them, however, faces the intrinsic difficulty that as ferromagnets become smaller, it becomes more difficult to stabilize their magnetic…
It has been shown that the combining of the electrical effect on the exchange bias field with giant magneto-resistance effect of the graphene/ferromagnet hybrid structures reveals a new non-volatile magnetic random access memory device…
Femtosecond laser control of antiferromagnetic order is a cornerstone for future memory and logic devices operating at terahertz clock rates. The advent of altermagnets -- antiferromagnets with unconventional spin-group symmetries --…
Antiferromagnetic materials hold potential for use in spintronic devices with fast operation frequencies and field robustness. Despite the rapid progress in proof-of-principle functionality in recent years, there has been a notable lack of…
Altermagnets are a recently discovered class of magnetic materials that combine a collinear, zero-magnetization spin structure, characteristic of antiferromagnets, with spin-split electronic bands, a hallmark of ferromagnets. This unique…
In digital circuits, a Flip-Flop (FF) is a circuit element that has two stable states which can be used to store and remember state information. The state of the circuit can be changed by applying signals to the control input. FFs are the…
Louis Neel pointed out in his Nobel lecture that while abundant and interesting from a theoretical viewpoint, antiferromagnets did not seem to have any applications. Indeed, the alternating directions of magnetic moments on individual atoms…
Magnetic skyrmions are topological quasiparticles potentially useful for memory and computing devices. Antiferromagnetic (AF) skyrmions present no transverse deflection, making them suitable candidates for data storage applications. After…
Altermagnets (AMs) are an emergent class of magnetic materials that combine properties of ferromagnets and antiferromagnets, exhibiting spin-polarized Fermi surfaces and zero net magnetic moment due to combined time-reversal and crystal…
For a long time, there have been no efficient ways of controlling antiferromagnets. Quite a strong magnetic field was required to manipulate the magnetic moments because of a high molecular field and a small magnetic susceptibility. It was…
A number of rare-earth monopnictides have topologically non-trivial band structures together with magnetism and strong electronic correlations. In order to examine whether the antiferromagnetic (AFM) semimetal YbAs ($T\rm_N$ = 0.5 K)…