Related papers: Gate-Tuned Thermoelectric Power in Black Phosphoru…
In contrast to monolayer graphene, in bilayer graphene (BLG) one can induce a tunable bandgap by applying an external electric field, which makes it suitable for field effect applications. Extrinsic doping of BLGs enriches the electronic…
Black phosphorus (P) has emerged as a layered semiconductor with a unique crystal structure featuring corrugated atomic layers and strong in-plane anisotropy in its physical properties. Here, we demonstrate that the crystal orientation and…
We investigated the out-of-plane magnetoresistance of pressurized black phosphorus (BP) with a longitudinal field configuration. Despite the absence of the Lorentz force in the present configuration, we observed a significant enhancement of…
First principle calculations are performed to investigate the effect of polar order strength on the thermoelectric (TE) properties of GeTe alloy in its rhombohedral structure. The variation in the polarization state using various…
The optical reflectivity of Pb$_{0.865}$Sn$_{0.135}$Se and Pb$_{0.75}$Sn$_{0.25}$Se solid solutions was measured in the THz spectral region energetically corresponding to bulk optical phonon excitations and in the temperature range from 40…
We present comparative theoretical investigation of thermoelectric power and Hall effect in the Hubbard model for correlated metal and Mott insulator (considered as prototype cuprate superconductor) for different concentrations of current…
An experimental setup was developed for the measurement of the thermoelectric power (TEP, Seebeck coefficient) in the temperature range from 2 to 350 K and magnetic fields up to 140 kOe. The system was built to fit in a commercial cryostat…
We report the fabrication and the electrical characterization of back-gated field effect transistors with black phosphorus channel. We show that the hysteresis of the transfer characteristic, due to intrinsic defects, can be exploited to…
We review the basic optical, electronic, optoelectronic, thermoelectric and mechanical properties of few-layer black phosphorus (BP), a layered semiconductor that can be exfoliated from bulk BP, the most stable allotrope of phosphorus. The…
Thermoelectric devices at the nanoscale offer promising routes for on-chip refrigeration and waste-heat recovery, yet most semiconductor-based implementations suffer from limited tunability and narrow operational ranges. We introduce a…
Black Phosphorus (bP) has emerged as an interesting addition to the category of two-dimensional materials. Surface-science studies on this material are of great interest, but they are hampered by bP's high reactivity to oxygen and water, a…
The operation of an integrated two-dimensional complementary metal-oxide-semiconductor inverter with well-matched input/output voltages is reported. The circuit combines a few-layer MoS2 n-MOSFET and a black phosphorus (BP) p-MOSFET…
Controlling the bandgap through local-strain engineering is an exciting avenue for tailoring optoelectronic materials. Two-dimensional crystals are particularly suited for this purpose because they can withstand unprecedented…
As a high mobility two-dimensional semiconductor with strong structural and electronic anisotropy, atomically thin black phosphorus (BP) provides a new playground for investigating the quantum Hall (QH) effect, including outstanding…
Black Phosphorus (BP) has gained renewed attention due to its singular anisotropic electronic and optical properties that might be exploited for a wide range of technological applications. In this respect, the thermal properties are…
We report sharp peaks in the differential conductance of a single-electron transistor (SET) at low temperature, for gate voltages at which charge fluctuations are suppressed. For odd numbers of electrons we observe the expected Kondo peak…
The electronic structure and thermoelectric properties of ZrRuTe-based Half-Heusler compounds are studied using density functional theory (DFT) and Boltzmann transport formalism. Based on rigorous computations of electron relaxation time…
Ferroelectric field-effect transistors employ a ferroelectric material as a gate insulator, the polarization state of which can be detected using the channel conductance of the device. As a result, the devices are of potential to use in…
The incorporation of electrically tunable materials into photonic structures such as waveguides and metasurfaces enables dynamic control of light propagation by an applied potential. While many materials have been shown to exhibit…
We study the thermoelectric properties of three-dimensional topological insulators with many holes (or pores) in the bulk. We show that at high density of these holes the thermoelectric figure of merit ZT can be large due to the…