We investigated the out-of-plane magnetoresistance of pressurized black phosphorus (BP) with a longitudinal field configuration. Despite the absence of the Lorentz force in the present configuration, we observed a significant enhancement of magnetoresistance marked with a clear onset field in both the semiconducting (1.1 GPa) and semimetallic (1.3 GPa) phases. The insulating behavior observed near the semiconductor-semimetal transitio pressure is possibly associated with emergence of an excitonic phase, which has been suggested in a recent theoretical study. BP under finely tuned pressure can be a candidate to realize the field-induced electronic phase transition in a moderate magnetic field below 9 T.
@article{arxiv.2512.16252,
title = {Magnetic-field-induced insulating behavior in black phosphorus under pressure},
author = {Kazuto Akiba and Yuzuki Sega and Yuichi Akahama and Yuta Seo and Tomoki Machida and Masashi Tokunaga},
journal= {arXiv preprint arXiv:2512.16252},
year = {2025}
}
Comments
6 pages, 3 figures, proceedings of 1000-Tesla Science Workshop