Related papers: Low-energy electron-irradiation effect on transpor…
The influence of electron-electron scattering on the distribution function and transport characteristics of intrinsic monolayer graphene is investigated via an ensemble Monte Carlo simulation. Due to the linear dispersion relation in the…
We report the thermal conductance G of Au/Ti/graphene/SiO2 interfaces (graphene layers 1 < n < 10) typical of graphene transistor contacts. We find G ~ 25 MW m-2 K-1 at room temperature, four times smaller than the thermal conductance of a…
We report the 1/f noise characteristics at low-frequency in graphene field-effect transistors that utilized a high-k dielectric tantalum oxide encapsulated layer (a few nanometers thick) placed by atomic layer deposition on Si3N4. A…
Graphene has been extensively studied for a variety of electronic and optoelectronic applications. The reported contact resistance between metal and graphene, or rather its specific contact resistance (R{_C}), ranges from a few tens of…
We present exact results for the electronic transport properties of graphene sheets connected to two metallic electrodes. Our results, obtained by transfer-matrix methods, are valid for all sheet widths and lengths. In the limit of large…
Contamination of graphene due to residues from nanofabrication often introduces background doping and reduces charge carrier mobility. For samples of high electronic quality, post-lithography cleaning treatments are therefore needed. We…
We evaluate the electronic transmission and conductance in bilayer graphene through a finite number of potential barriers. Further, we evaluate the dispersion relation in a bilayer graphene superlattice with a periodic potential applied to…
We report a naturally-occurring two-dimensional material (graphene that can be viewed as a gigantic flat fullerene molecule, describe its electronic properties and demonstrate all-metallic field-effect transistor, which uniquely exhibits…
Electronic and transport properties of bilayer heterostructure under light irradiation are of fundamental interest to improve functionality of optoelectronic devices. We theoretically study the modification of transport properties of…
We have measured the impact of atomic hydrogen adsorption on the electronic transport properties of graphene sheets as a function of hydrogen coverage and initial, pre-hydrogenation field-effect mobility. Our results are compatible with…
A novel nanoelectronic device is constructed by graphyne that is robustly connected between graphene electrodes, where graphyne is composed of hexagonal carbon rings and carbon chains. Owing to similarities between the bond lengths and unit…
Minimal conductivity of a single undoped graphene layer is known to be of the order of the conductance quantum, independent of the electron velocity. We show that this universality does not survive electron-electron interaction which…
We separate localization and interaction effects in epitaxial graphene devices grown on the C-face of a 4H-SiC substrate by analyzing the low temperature conductivities. Weak localization and antilocalization are extracted at low magnetic…
Thermionic emission from monolayer graphene grown on representative transition metals, Ir and Ru, is characterized by low-energy electron microscopy (LEEM). Work functions were determined from the temperature dependence of the emission…
The authors report micro-Raman investigation of changes in the single and bilayer graphene crystal lattice induced by the low and medium energy electron-beam irradiation (5 and 20 keV). It was found that the radiation exposures results in…
The impact of the intrinsic time-dependent fluctuations in the electrical resistance at the graphene-metal interface or the contact noise, on the performance of graphene field effect transistors, can be as adverse as the contact resistance…
We report the first experimental study of the quantum interference correction to the conductivity of bilayer graphene. Low-field, positive magnetoconductivity due to the weak localisation effect is investigated at different carrier…
Graphene field-effect transistors are integrated with solution-processed multilayer hybrid organic-inorganic self-assembled nanodielectrics (SANDs). The resulting devices exhibit low-operating voltage (2 V), negligible hysteresis, current…
The transport properties of a bilayer graphene are studied theoretically within a self-consistent Born approximation. The electronic spectrum is composed of $k$-linear dispersion in the low-energy region and $k$-square dispersion as in an…
Energy relaxation of hot Dirac fermions in bilayer epitaxial graphene is experimentally investigated by magnetotransport measurements on Shubnikov-de Haas oscillations and weak localization. The hot-electron energy loss rate is found to…