Related papers: Interference-based molecular transistors
An unresolved challenge facing electronics at a few-nm scale is that resistive channels start leaking due to quantum tunneling. This affects the performance of nanoscale transistors, with single-molecule devices displaying particularly low…
As the dimensions of a conductor approach the nano-scale, quantum effects will begin to dominate its behavior. This entails the exciting possibility of controlling the conductance of a device by direct manipulation of the electron wave…
We give a detailed discussion of the Quantum Interference Effect Transistor (QuIET), a proposed device which exploits interference between electron paths through aromatic molecules to modulate current flow. In the off state, perfect…
Using first-principles calculations we analyze the electronic transport properties of a recently proposed anthraquinone based electrochemical switch. Robust conductance on/off ratios of several orders of magnitude are observed due to…
We propose a new type of molecular transistor, the Quantum Interference Effect Transistor (QuIET), based on tunable current suppression due to quantum interference. We show that any aromatic hydrocarbon ring has two-lead configurations for…
We study the transport through a molecular junction exhibiting interference effects. We show that these effects can still be observed in the presence of molecular vibrations if Coulomb repulsion is taken into account. In the Kondo regime,…
Quantum interference can profoundly affect charge transport in single molecules, but experiments can usually measure only the conductance at the Fermi energy. Because in general the most pronounced features of the quantum interference are…
Fundamental physical properties limiting the performance of spin field effect transistors are compared to those of ordinary (charge-based) field effect transistors. Instead of raising and lowering a barrier to current flow these spin…
Molecular electronics offers unique scientific and technological possibilities, resulting from both the nanometre scale of the devices and their reproducible chemical complexity. Two fundamental yet different effects, with no classical…
It is well known that conventional Field Effect Transistors (FET's) require a change in the channel potential of at least 60 mV at 300K to effect a change in the current by a factor of ten, and this minimum subthreshold slope S puts a lower…
This paper addresses the question of whether a ``rigid molecule'' (one which does not deform in an external field) used as the conducting channel in a standard three-terminal MOSFET configuration can offer any performance advantage relative…
The appealing feature of molecular electronics is the possibility of exploiting functionality built within a single molecule. This functionality can be employed, for example, for sensing or switching purposes. Thus, ideally, the associated…
Since the concepts for the implementation of data storage and logic gates used in conventional electronics cannot be simply downscaled to the level of single molecule devices, new architectural paradigms are needed, where quantum…
Transistors, regardless of their size, rely on electrical gates to control the conductance between source and drain contacts. In atomic-scale transistors, this conductance is exquisitely sensitive to single electrons hopping via individual…
We develop a theoretical model for how organic molecules can control the electronic and transport properties of an underlying transistor channel to whose surface they are chemically bonded. The influence arises from a combination of…
In contrast to silicon-based transistors, single molecule junctions can be gated by simple mechanical means. Specifically, charge can be transferred between the junction's electrodes and its molecular bridge when the interelectrode distance…
This work explores the consequences of introducing a piezoelectric gate barrier in a normal field-effect transistor. Because of the positive feedback of strain and piezoelectric charge, internal charge amplification occurs in such an…
Here we propose and analyze the behavior of a FET--like switching device, the Mott transition field effect transistor, operating on a novel principle, the Mott metal--insulator transition. The device has FET-like characteristics with a low…
Destructive quantum interference in single molecule electronics is an intriguing phe- nomenon; however, distinguishing quantum interference effects from generically low transmission is not trivial. In this paper, we discuss how quantum…
An atomtronic transistor circuit is used to realize a driven matterwave oscillator. The transistor consists of Source and Drain regions separated by a narrow Gate well. Quasi-steady-state behavior is determined from a thermodynamic model,…