Related papers: Strain-controlled spin splitting in the conduction…
The discovery of collinear symmetric-compensated altermagnets (AM) with intrinsic spin splitting provides a route towards energy-efficient and ultrafast device applications. Here, using first-principles calculations and symmetry analysis,…
We study the electronic band structure in the K/K' valleys of the Brillouin zone of monolayer WSe2 and MoSe2 by optical reflection and photoluminescence spectroscopy on dual-gated field-effect devices. Our experiment reveals the distinct…
The strain effects on the spin-orbit induced splitting of the valence band maximum and conduction band minimum in monolayer MoS2 and the gap in graphene are calculated using first-principles calculations. The dependence of these splittings…
Understanding the origin of splitting of valance band is important since it governs the unique spin and valley physics in few-layer MoS2. With first principle methods, we explore the effects of spin-orbit coupling and layer's coupling on…
We study electron transport in monolayer molybdenum disulfide MoS$_2$ subjected to a magnetic barrier. Our analysis employs a full-band continuum model to capture the relevant physical phenomena. We focus on how electron energy, magnetic…
In this paper, spin properties of monolayer MX (M=Ga, In and X=S, Se, Te) in the presence of strain are studied. Density functional theory is used to investigate spin properties. The strain changes modification of bandgap due to spin-orbit…
Spatial, momentum and energy separation of electronic spins in condensed matter systems guides the development of novel devices where spin-polarized current is generated and manipulated. Recent attention on a set of previously overlooked…
Manipulation of spin-polarized electronic states of two-dimensional (2D) materials under ambient conditions is necessary for developing new quantum devices with small physical dimensions. Here, we explore spin-dependent electronic…
In this work, the electrical and spin properties of monolayer MoSi2X4 (X= N, P, As, and Sb) under vertical strain are investigated. The band structures state that MoSi2N4 is an indirect semiconductor, whereas other compounds are direct…
Material systems that exhibit tunable spin-selective conductivity are key components of spintronic technologies. Here we demonstrate a novel type of spin-selective transport, based on the unusual Landau level (LL) sequence observed in…
We report scanning tunneling microscopy (STM) and spectroscopy (STS) measurements of monolayer and bilayer WSe$_2$. We measure a band gap of 2.21 $\pm$ 0.08 eV in monolayer WSe$_2$, which is much larger than the energy of the…
We first derive the energy dispersion of bilayer MoS$_{2}$ in the presence of a perpendicular electric field $E_z$. We show that the band gap and layer splitting can be controlled by the field $E_z$. Away from the $k$ point, the intrinsic…
The new two-dimensional materials, MoSi$_2$N$_4$ and WSi$_2$N$_4$ are experimentally synthesized successfully and various similar structures are predicted theoretically. Here, we report the electronic properties with a special focus on the…
Using \textit{ab initio} methodology, we reveal a strain-mediated approach to precisely tune the magnetoelectric coupling and spin-driven emergent polarization of NiX$_2$ (X = I, Br) monolayers. In the absence of strain, these systems…
In this work, the electrical properties of monolayer InSb in the presence of biaxial strain using density functional theory are investigated. Here, we first explore the band structure of InSb with and without spin-orbit coupling (SOC)…
It has been generally accepted that the spin-orbit coupling effect in noncentrosymmetric materials leads to the band splitting and non-trivial spin polarization in the momentum space. However, in some cases, zero net spin polarization in…
Transition metal dichalcogenides have attracted much attention recently due to their potential applications in spintronics and photonics as a result of the indirect to direct band gap transition and the emergence of the spin-valley coupling…
Wrinkles and nanobubbles are an integral and often unavoidable part of integrating 2D van der Waals semiconductors into actual device architectures. Despite their ubiquitous nature, quantitative correlation between such spatially…
Exchange coupling between localized spins and band or topological states accounts for giant magnetotransport and magnetooptical effects as well as determines spin-spin interactions in magnetic insulators and semiconductors. However, even in…
We present a theory for two recent experiments in bulk strained semiconductors \cite{kato1, kato2} and show that a new, previously overlooked, strain spin-orbit coupling term may play a fundamental role. We propose simple experiments that…