Related papers: Strain-controlled spin splitting in the conduction…
We study the conduction band spin splitting that arises in transition metal dichalcogenide (TMD) semiconductor monolayers such as MoS$_2$, MoSe$_2$, WS$_2$ and WSe$_2$ due to the combination of spin-orbit coupling and lack of inversion…
Magnetism-driven nonrelativistic spin splitting (NRSS) provides a pathway toward efficient, spin-orbit-free spintronics. In centrosymmetric two-dimensional antiferromagnets, spin-polarized transport is symmetry-forbidden due to the combined…
Two-dimensional (2D) graphene and graphene-related materials (GRMs) show great promise for future electronic devices. Nevertheless, GRMs result distinct properties under the influence of the substrate that serves as support through uneven…
We propose a straightforward and effective approach for quantifying the band inversion induced by spin-orbit coupling in band insulators. In this approach we define a quantity as a function of wavevector in the Brillouin zone measuring the…
We show that the efficiency of manipulating electron spin in semiconductor quantum wells can be enhanced by tuning the strain strength. The effect combining intrinsic and strain-induced spin splitting varies for different systems, which…
Strain engineering has emerged as a powerful tool to modify the optical and electronic properties of two-dimensional crystals. Here we perform a systematic study of strained semiconducting transition metal dichalcogenides. The effect of…
Time reversal dictates that nonmagnetic, centrosymmetric crystals cannot be spin-polarized as a whole. However, it has been recently shown that the electronic structure in these crystals can in fact show regions of high spin-polarization,…
Since the lattices of ABA-stacked graphene multilayers with an even number of layers, as well as that of monolayer graphene, satisfy spatial-inversion symmetry, their electronic bands must be spin degenerate in the presence of…
Crystalline two-dimensional (2D) semiconductors often combine high elasticity and in-plane strength, making them ideal for strain-induced tuning of electronic characteristics, akin to strategies used in silicon electronics. However,…
We present in-depth measurements of the electronic band structure of the transition-metal dichalcogenides (TMDs) MoS2 and WS2 using angle-resolved photoemission spectroscopy, with focus on the energy splittings in their valence bands at the…
The recent work on stanene as quantum spin Hall insulators made us investigate bilayer stanene using first principle calculations. With an aim of improving and developing new properties, via modulating the stacking order (and angle) of the…
The strong spin-orbit coupling and the broken inversion symmetry in monolayer transition metal dichalcogenides (TMDs) results in spin-valley coupled band structures. Such a band structure leads to novel applications in the fields of…
A WSe$_2$ monolayer shows many interesting properties due to its spin-orbit coupling induced spin splitting in bands around the Fermi level and the spin-valley configuration. The orientation of the spin polarization in the relevant bands is…
We use a combined ab-initio calculations and k.p theory based approach to derive a low-energy effective Hamiltonian for monolayer MoS2 at the K point of the Brillouin zone. It captures the features which are present in first-principles…
We investigate the impact of mechanical strains and a perpendicular electric field on the electronic and magnetic ground-state properties of two-dimensional monolayer CrI$_3$ using density functional theory. We propose a minimal spin model…
Momentum-resolved spin-polarized bands are a key ingredient in many proposed spintronic devices, but their existence often relies on lattice commensurability or strong spin-orbit coupling. By a large-scale DFT calculation (up to 4212…
We present a comprehensive theoretical study of strain-engineered quantum transport in monolayer tungsten diselenide (WSe$_2$) in the presence of an electrostatic scalar potential. By incorporating strain effects within a low-energy Dirac…
Electrical control of spin polarization is very desirable in spintronics, since electric field can be easily applied locally in contrast with magnetic field. Here, we propose a new concept of bipolar magnetic semiconductor (BMS) in which…
We report a strain-induced direct-to-indirect band gap transition in mechanically deformed WS2 monolayers (MLs). The necessary amount of strain is attained by proton irradiation of bulk WS2 and the ensuing formation of one-ML-thick,…
The spin-dependent conductance and spin-polarization of a MoS2 quantum dot are studied in presence (absent) of an external electric field perpendicular to the molybdenum plane. It is shown that in absence of the electric field, the…