Related papers: Valley blockade in a silicon double quantum dot
Quasi-static transport measurements are employed on a laterally defined tunnel-coupled double quantum dot. A nearby quantum point contact allows us to track the charge as added to the device. If charged with only up to one electron, the…
We have investigated the transport characteristics of an electron pump consisting of an asymmetric double quantum dot at zero bias voltage which is subject to electromagnetic radiation. Depending on the energies of the intermediate states…
We report the demonstration of a low-disorder silicon metal-oxide-semiconductor (Si MOS) quantum dot containing a tunable number of electrons from zero to N=27. The observed evolution of addition energies with parallel magnetic field…
Strong electron and spin correlations in a double-quantum-dot (DQD) can give rise to different quantum states. We observe a continuous transition from a Kondo state exhibiting a single-peak Kondo resonance to another exhibiting a double…
Research on Si quantum dot spin qubits is motivated by the long spin coherence times measured in Si, yet the orbital spectrum of Si dots is increased as a result of the valley degree of freedom. The valley degeneracy may be lifted by the…
We describe the mechanism of charge-spin transformation in a double quantum dot (DQD) with even occupation, where a time dependent gate voltage v(t) is applied to one of its two valleys, whereas the other one is coupled to the source and…
Device stability is essential for quantum information technologies, where reliable control of electronic states is crucial. Diamond valleytronics offers a promising platform by exploiting the valley degree of freedom to store and manipulate…
We present measurements of transport through two tunnel-coupled quantum dots of different sizes connected in series in a strong, variable, perpendicular magnetic field. Double dot conductance was measured both as a function of magnetic…
Surface-gated quantum dots (QDs) in semiconductor heterostructures represent a highly attractive platform for quantum computation and simulation. However, in this implementation, the barriers through which the QD is tunnel-coupled to source…
It is shown that the resonance Kondo tunneling through a double quantum dot (DQD) with even occupation and singlet ground state may arise at a strong bias, which compensates the energy of singlet/triplet excitation. Using the…
Silicon quantum dot qubits must contend with low-lying valley excited states which are sensitive functions of the quantum well heterostructure and disorder; quantifying and maximizing the energies of these states are critical to improving…
We experimentally study the transport features of electrons in a spin-diode structure consisting of a single semiconductor quantum dot (QD) weakly coupled to one nonmagnetic (NM) and one ferromagnetic (FM) lead, in which the QD has an…
The energies of valley-orbit states in silicon quantum dots are determined by an as yet poorly understood interplay between interface roughness, orbital confinement, and electron interactions. Here, we report measurements of one- and…
We study the spin-polarized transport through a triple quantum dot molecule weakly coupled to ferromagnetic leads. The analysis is performed by means of the real-time diagrammatic technique including up to the second order of perturbation…
Spatial confinement and manipulation of charged carriers in semiconducting nanostructures are essential for realizing quantum electronic devices. Gate-defined nanostructures made of two-dimensional (2D) semiconducting transition metal…
Electron spin qubits in silicon, whether in quantum dots or in donor atoms, have long been considered attractive qubits for the implementation of a quantum computer due to the semiconductor vacuum character of silicon and its compatibility…
Recent experimental observations of current blockades in 2-D material quantum-dot platforms have opened new avenues for spin and valley-qubit processing. Motivated by experimental results, we construct a model capturing the delicate…
Exchange coupling is a key ingredient for spin-based quantum technologies since it can be used to entangle spin qubits and create logical spin qubits. However, the influence of the electronic valley degree of freedom in silicon on exchange…
We perform an excited state spectroscopy analysis of a silicon corner dot in a nanowire field-effect transistor to assess the electric field tunability of the valley splitting. First, we demonstrate a back-gate-controlled transition between…
Electron spins in silicon quantum dots are excellent qubits because they have long coherence times, high gate fidelities, and are compatible with advanced semiconductor manufacturing techniques. The valley degree of freedom, which results…