Related papers: Thermal Design of Power Electronic Circuits
The optimal design of power converters requires accurate knowledge of the dissipation elements of its system to achieve the desired performance and security requirements. Calorimetric methods have surpassed classical electrical methods for…
Thermal FEM (Finite Element Method) simulations can be used to predict the thermal behavior of power semiconductors in application. Most power semiconductors are made of silicon. Silicon thermal material properties are significantly…
This paper presents and evaluates a novel method for generating power losses on transistors avoiding high currents. These could heat up the circuit tracks, affecting the accurate thermal modeling of the system. The proposed procedure is…
In a hard switched MOSFET based converter, turn-on energy losses is predominant in the total switching loss. At higher junction temperature the turn-on energy loss further increases due to the reverse recovery effect of the complementary…
Power electronics converters are key enablers in the global energy transition for power generation, industrial and mobility applications; they convert electrical power in a controlled, reliable and efficient manner. The semiconductor…
Compared with silicon (Si) power devices, Silicon carbide (SiC) devices have the advantages of fast switching speed and low on-resistance. However, the effects of non-ideal characteristics of SiC MOSFETs and stray parameters (especially…
Thermal management of power electronics and Electronic Control Units is crucial in times of increasing power densities and limited assembly space. Electric and autonomous vehicles are a prominent application field. Thermal Interface…
This manuscript reports a semiconductor-sensitized thermal cell (STC) that converts ambient heat into electrical power while simultaneously reducing its own temperature under isothermal conditions. Using a printable…
Control of thermal emission is important in a number of applications from thermal energy harvesting and management and sensing of gas and chemical to thermal camouflage. Semiconductor-based devices can be engineered to enable electrical…
Thermoelectric devices convert temperature gradients into electrical power and vice versa, thus enabling energy scavenging from waste heat, sensing and cooling. Yet, many of these attractive applications are hindered by the limited…
A number of current approaches to quantum and neuromorphic computing use superconductors as the basis of their platform or as a measurement component, and will need to operate at cryogenic temperatures. Semiconductor systems are typically…
We will describe the thermal performance of power semiconductor module, which consists of hetero-junction bipolar transistors (HBTs), for mobile communication systems. We calculate the thermal resistance between the HBT fingers and the…
Temperature rise of qubits due to heating is a critical issue in large-scale quantum computers based on quantum-dot (QD) arrays. This leads to shorter coherence times, induced readout errors, and increased charge noise. Here, we propose a…
Power electronics systems, widely used in various applications such as industrial automation, electric cars, and renewable energy, have the primary function of converting and controlling electrical power to the desired type of load. Despite…
A theory of transverse electron transport coupled with heat transfer in semiconductor thin films is developed conceptually modeling structures of modern electronics. The transverse currents generate Joule heat with positive feedback through…
Heating of semiconductor devices limits their performance and lifetime, which must be addressed by thermal management starting at the heat source. It is a common assumption that the heat source and the resulting heat spot locally coincide,…
An equation based reduced order model applicable to generalized heat equation and thermal simulations of power electronics systems developed in commercial CFD tools, is presented in this work. The model considers the physics of heat…
Thermal transient measurement based on source-drain voltage is a standard method to characterize thermal properties of silicon semiconductors but is doubtful to be directly applied to silicon carbide (SiC) devices. To evaluate its…
We demonstrate the capabilities of a high temperature measurement set-up recently developed at our institute. It is dedicated to the characterization of semiconductor devices and test structures in the temperature range from room…
Silicon microelectronics, consisting of complementary metal oxide semiconductor (CMOS) technology, have changed nearly all aspects of human life from communication to transportation, entertainment, and healthcare. Despite the widespread and…