Related papers: Impurity-driven intervalley spin-flip scattering-i…

Using long-distance lateral devices, spin transport near the interface of Si and its native oxide (SiO2) is studied by spin-valve measurements in an in-plane magnetic field and spin precession measurements in a perpendicular magnetic field…

Using time-resolved Faraday rotation, the drift-induced spin-orbit Field of a two-dimensional electron gas in an InGaAs quantum well is measured. Including measurements of the electron mobility, the Dresselhaus and Rashba coefficients are…

We revisit the problem of diffusive proximity systems involving superconductors and normal metals (or ferromagnets) with magnetic disorder. On the length scales much larger than its correlation length, the effect of sufficiently weak…

We report spin valve behavior in an organic nanowire consisting of three layers - cobalt, Alq3 and nickel - all nominally 50 nm in diameter. Based on the data, we conclude that the dominant spin relaxation mechanism in Alq3 is the…

A pulsed technique for electrons in 2D systems, in some ways analogous to spin echo in nuclear magnetic resonance, is discussed. We show that a sequence of optical below-band gap pulses can be used to suppress the electron spin relaxation…

We report a large and unexpected suppression of the free electron spin relaxation in lightly-doped n-GaAs bulk crystals. The spin relaxation rate shows weak mobility dependence and saturates at a level 30 times less then that predicted by…

We study the linear response spin Hall conductivity of a two-dimensional electron gas (2DEG) in the presence of the Rashba spin orbit interaction in the diffusive transport regime. When defect scattering is modeled by isotropic short-range…

We study all of the leading-order contributions to spin relaxation of \textit{conduction} electrons in silicon due to the electron-phonon interaction. Using group theory, $k\cdot p$ perturbation method and rigid-ion model, we derive an…

We study a spin S=M/2--Kondo system coupled to electrons in an arbitrary nonequilibrium situation above Kondo temperature. Coupling to hot electrons leads to an increased inverse lifetime of pseudo particles, related to the Korringa width.…

We analyze new spin effects in current-carrying state of superconductor-2D electron gas-superconductor (S-2DEG-S) device with spin-polarized nuclei in 2DEG region. The hyperfine interaction of 2D electrons with nuclear spins, described by…

We report an enhancement of the electron spin relaxation time (T1) in a (110) InAs/GaSb superlattice by more than an order of magnitude (25 times) relative to the corresponding (001) structure. The spin dynamics were measured using…

Experimental evidence of electron spin precession during travel through the phosphorus-doped Si channel of an all-electrical device simultaneously indicates two distinct processes: (i) short timescales (~50ps) due to purely conduction-band…

Developing a microscopic understanding of spin decoherence is essential to advancing quantum technologies. Electron spin decoherence due to atomic vibrations (phonons) plays a special role as it sets an intrinsic limit to the performance of…

We comment on the conclusion by Ma et al. [Appl. Phys. Lett. {\bf 94}, 241112 (2009)] that the Elliott-Yafet mechanism is more important than the D'yakonov-Perel' mechanism at high carrier density in intrinsic bulk CdTe at room temperature.…

In a heavily doped semiconductor with weak spin-orbital interaction the Dyakonov-Perel spin relaxation rate is known to be proportional to the Drude conductivity. We argue that in the case of weak spin-orbital interaction this…

It is proposed that the observed small (100 ps) spin relaxation time in graphene is due to resonant scattering by local magnetic moments. At resonances, magnetic moments behave as spin hot spots: the spin-flip scattering rates are as large…

Transition metal dichalcogenides (TMDs) combine interesting optical and spintronic properties in an atomically-thin material, where the light polarization can be used to control the spin and valley degrees-of-freedom for the development of…

We show that pure spin Hall current, flowing out of a four-terminal phase-coherent two-dimensional electron gas (2DEG) within inversion asymmetric semiconductor heterostructure, contains contributions from both the extrinsic mechanisms…

We develop the theory of single-electron silicon spin qubit relaxation in the presence of a magnetic field gradient. Such field gradients are routinely generated by on-chip micromagnets to allow for electrically controlled quantum gates on…

We investigate the dynamic behavior of spin reversal events in the dilute Ising model, focusing on the influence of static disorder introduced by pinned spins. Our Monte Carlo simulations reveal that in a homogeneous, defect-free system,…