Related papers: Observation of quantum Hall effect in a microstrai…
The quantum Hall effect is generally understood for free electron gases, in which topologically protected edge states between Landau levels (LLs) form conducting channels at the edge of the sample. In periodic crystals, the LLs are…
We examine the quantum phase diagram of the fractional quantum Hall effect (FQHE) in the lowest two Landau levels in half-filled bilayer structures as a function of tunneling strength and layer separation, i.e., we revisit the lowest Landau…
The anomalous Hall effect (AHE), conventionally associated with time-reversal symmetry breaking in ferromagnetic materials, has recently been observed in nonmagnetic topological materials, raising questions about its origin. We unravel the…
Because of their complex Fermi surfaces, the identification of the physical phenomena contributing to electronic scattering in the Fe-based superconductors is a difficult task. Here, we report on the electrical resistivity,…
The Hall effect is investigated in thin-film samples of iron-chalcogenide superconductors in detail. The Hall coefficient (RH) of FeTe and Fe(Se1-xTex) exhibits a similar positive value around 300 K, indicating that the high-temperature…
Quantum Hall effect (QHE) is the basis of modern resistance metrology. In Quantum Hall Array Resistance Standards (QHARS), several individual QHE elements, each one having the same QHE resistance (typically half of the von Klitzing…
The quantum anomalous Hall (QAH) effect is conventionally understood to exist only in Chern insulators, while a recent study has shown that ferromagnetic metals can also host the QAH effect. Between insulators and metals, we demonstrate…
It is shown that the observed Quantum Hall Effect in epitaxial layers of heavily doped n-type GaAs with thickness (50-140 nm) larger the mean free path of the conduction electrons (15-30 nm) and, therefore, with a three-dimensional…
Thermodynamic and transport properties are reported on single crystals of the hexagonal antiferromagnet Mn$_3$Sn grown by the Sn flux technique. Magnetization measurements reveal two magnetic phase transitions at $T_1$ = 275 K and $T_2$ =…
We use numerical simulations to predict peculiar magnetotransport fingerprints in polycrystalline graphene, driven by the presence of grain boundaries of varying size and orientation. The formation of Landau levels is shown to be restricted…
The Hall effect is a powerful tool for investigating carrier type and density. For single-band materials, the Hall coefficient is traditionally expressed simply by $R_H^{-1} = -en$, where $e$ is the charge of the carrier, and $n$ is the…
The low-field quantum Hall effect is investigated on a two-dimensional electron system in an AlGaAs/GaAs heterostructure. Magneto-oscillations following the semiclassical Shubnikov-de Haas formula are observed even when the emergence of the…
Quantum Hall effect (QHE) devices based on epitaxial graphene films grown on SiC were fabricated and studied for development of the QHE resistance standard. The graphene-metal contacting area in the Hall devices has been improved and…
Granular metals offer tailorable electronic properties and play crucial roles in device and sensor applications. We have fabricated a series of nonmagnetic granular CoSi2 thin films and studied the Hall effect and transport properties. We…
A novel model of complex quantum harmonic oscillator is found to account for the observed Fractional quantum Hall effect (FQHE). The sequences of the observed FQHE conductivity and charge are explained. The two sequences are found to…
Quantum anomalous Hall (QAH) effect in magnetic topological insulator (TI) is a novel transport phenomenon in which the Hall resistance reaches the quantum plateau in the absence of external magnetic field. Recently, this exotic effect has…
The quantum Hall effect is a remarkable manifestation of quantized transport in a two-dimensional electron gas. Given its technological relevance, it is important to understand its development in realistic nanoscale devices. In this work we…
The quantum anomalous Hall effect (QAHE) and magnetic Weyl semimetals (WSMs) are topological states induced by intrinsic magnetic moments and spin-orbit coupling. Their similarity suggests the possibility of achieving the QAHE by…
We show that for the case of a many valley host semiconductor an edge channel (EC) related non-local behaviour can persist also in the 3D-regime where the quantum Hall effect (QHE) is already quenched. We demonstrate that the QHE is…
In this paper we investigate a possibility for the existence of an analog of the Quantum Hall Effect for neutral particles with a permanent magnetic moment $\mu$ in the presence of crossed inhomogeneous magnetic and electric fields. We…