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Device passivation through ultraclean hexagonal BN encapsulation is proven one of the most effective ways for constructing high-quality devices with atomically thin semiconductors that preserves the ultraclean interface quality and…
We report analytic results on quantum capacitance (C$_{q}$) measurements and their optical tuning in dual-gated device with potassium-doped multi-layered black phosphorous (BP) as the channel material. The two-dimensional (2D) layered BP is…
Low carrier mobility and high electrical contact resistance are two major obstacles prohibiting explorations of quantum transport in TMDCs. Here, we demonstrate an effective method to establish low-temperature Ohmic contacts in boron…
Black phosphorus (BP) is an emerging two-dimensional semiconducting material with great potential for nanoelectronic and nanophotonic applications, especially owing to its unique anisotropic electrical and optical properties. Many…
High-performance infrared photodetection underpins various applications spanning surveillance, environmental monitoring, optical communications and biomedical imaging. However, conventional bulk detectors remain limited by poor spectral…
Hexagonal boron nitride (BN), one of the very few layered insulators, plays a crucial role in 2D materials research. In particular, BN grown with a high pressure technique has proven to be an excellent substrate material for graphene and…
Ballistic device performance of monolayer black phosphorous (BP) field-effect transistors (FET) is investigated in this work. Due to the anisotropic effect mass of the carriers, the ON-state current is dependent on the transport direction.…
Black phosphorus (BP), an emerging two-dimensional (2D) material with intriguing optical properties, forms a promising building block in optics and photonics devices. In this work, we propose a simple structure composed of BP sandwiched by…
Black phosphorus (BP) has recently emerged as an alternative 2D semiconductor owing to its fascinating electronic properties such as tunable bandgap and high charge carrier mobility. The structural investigation of few-layer BP, such as…
The presence of finite bandgap and high mobility in semiconductor few-layer black phosphorus offers an attractive prospect for using this material in future two-dimensional electronic devices. Here we demonstrate for the first time fully…
Black phosphorus (P) has emerged as a layered semiconductor with a unique crystal structure featuring corrugated atomic layers and strong in-plane anisotropy in its physical properties. Here, we demonstrate that the crystal orientation and…
Black phosphorus is a very promising material for telecommunication due to its direct bandgap and strong resonant absorption in near-infrared wavelength range. However, ultrafast nonlinear photonic applications relying on the ultrafast…
Hexagonal boron nitride (h-BN) has received great interest in recent years as a wide bandgap analog of graphene-derived systems. However, the thermal transport properties of h-BN, which can be critical for device reliability and…
We study the mechanical and electronic properties of heterobilayers composed of black phosphorus (BP) on hexagonal boron nitride (hBN) and of blue phosphorus (\Pblue) on hBN by means of ab-intio density functional theory. Emphasis is put on…
Phosphorus atomic chains, the utmost-narrow nanostructures of black phosphorus (BP), are highly relevant to the in-depth development of BP into one-dimensional (1D) regime. In this contribution, we report a top-down route to prepare atomic…
The incorporation of electrically tunable materials into photonic structures such as waveguides and metasurfaces enables dynamic control of light propagation by an applied potential. While many materials have been shown to exhibit…
Atomically thin layered black phosphorous (BP) has recently appeared as an alternative to the transitional metal di chalcogenides for future channel material in a MOS transistor due to its lower carrier effective mass. Investigation of the…
Monolayer black phosphorus (MBP) is an interesting emerging electronic material with a direct band gap and relatively high carrier mobility. In this work we report a theoretical investigation of nonequilibrium spin injection and…
The intrinsic carrier transport dynamics in phosphorene is theoretically examined. Utilizing a density functional theory treatment, the low-field mobility and the saturation velocity are characterized for both electrons and holes in the…
The quantum Hall (QH) effect in two-dimensional electron systems (2DESs) is conventionally observed at liquid-helium temperatures, where lattice vibrations are strongly suppressed and bulk carrier scattering is dominated by disorder.…