Related papers: Proposal for a spin MOSFET based on spin gapless s…
Current understanding of spin injection tells us that a metal ferromagnet can inject spin into a semiconductor with 100% efficiency if either the ferromagnet is an ideal half metal with 100% spin polarization, or there exists a suitable…
Room temperature operation of a spin exclusive or (XOR) gate was demonstrated in lateral spin valve devices with nondegenerate silicon (Si) channels. The spin XOR gate is a fundamental part of the magnetic logic gate (MLG) that enables…
We report a new class of large-gap quantum spin Hall insulators in two-dimensional transition metal dichalcogenides, namely, MX$_2$ with M=(Mo, W) and X=(S, Se, and Te), whose topological electronic properties are highly tunable by external…
It is shown that spin Hall effect creates uniform spin polarization of electrons in semiconductor with a linear in the momentum spin splitting of conduction band. In turn, the profile of the non-uniform spin polarization accumulated at the…
An analysis of a novel magnetic field sensor based on a graphene spin capacitor is presented. The proposed device consists of graphene nanoribbons on top of an insulator material connected to a ferromagnetic source/drain. The time evolution…
In this paper, a two-dimensional analytical model of a laterally graded-channel triple-metal double-gate Junctionless Field Effect Transistor with hetero dielectric gate oxide stack consisting of SiO$_2$ and HfO$_2$ is derived. The model…
The continued evolution of CMOS technology demands materials and architectures that emphasize low power consumption, particularly for computations involving large scale data processing and multivariable optimization. Ferroelectric materials…
We study theoretically the spin transport in a nonmagnetic metal connected to ferromagnetic injector and detector electrodes. We derive a general expression for the spin accumulation signal which covers from the metallic to the tunneling…
We propose a semiconductor structure that can rotate the electron spin without using ferromagnetic contacts, tunneling barriers, external radiation etc. The structure consists of a strongly curved one-dimensional ballistic wire with…
We show that spin polarization of electron density in nonmagnetic degenerate semiconductors can achieve 100%. This effect is realized in ferromagnet-semiconductor $FM-n^{+}$-$n$ junctions even at moderate spin selectivity of the $FM-n^{+}$…
We report electrical spin injection from a ferromagnetic metal contact into a semiconductor light emitting diode structure with an injection efficiency of 30% which persists to room temperature. The Schottky barrier formed at the Fe/AlGaAs…
The wave nature of electrons in semiconductor nanostructures results in spatial interference effects similar to those exhibited by coherent light. The presence of spin-orbit coupling renders interference in spin space and in real space…
Two-dimensional (2D) materials, such as molybdenum disulfide (MoS2), have been shown to exhibit excellent electrical and optical properties. The semiconducting nature of MoS2 allows it to overcome the shortcomings of zero-bandgap graphene,…
Spintronics, a technology harnessing electron spin for information transmission, offers a promising avenue to surpass the limitations of conventional electronic devices. While the spin directly interacts with the magnetic field, its control…
Vertical field effect transistors (VFETs) show many advantages such as high switching speed, low operating voltage, low power consumption, and miniaturization over lateral FETs. However, VFET still faces the main challenges of high…
By applying density functional theory calculations, we predict that the groundstate of bilayer silicene at certain interlayer distances can be antiferromagnetic. At small electron or hole doping, it becomes half metallic under applied…
We propose a simple analytical model of a metal-oxide-semiconductor field-effect transistor with a lateral resonant gate based on the coupled electromechanical equations, which are self-consistently solved in time. All charge densities…
We show that spin polarization of electrons in nonmagnetic semiconductors near specially tailored ferromagnet-semiconductor junctions can achieve 100%. This effect is realized even at moderate spin injection coefficients of the contact when…
We investigate the spin-polarization of the ferromagnetic semiconductor (Ga,Mn)As by point contact Andreev reflection spectroscopy. The conductance spectra are analyzed using a recent theoretical model that accounts for momentum- and…
In this paper, we propose a novel S/D engineering for dual-gated Bilayer Graphene (BLG) Field Effect Transistor (FET) using doped semiconductors (with a bandgap) as source and drain to obtain unipolar complementary transistors. To simulate…