Related papers: Pauli spin blockade in CMOS double quantum dot dev…
We report on a flexible 300 mm process that optimally combines optical and electron beam lithography to fabricate silicon spin qubits. It enables on-the-fly layout design modifications while allowing devices with either n- or p-type ohmic…
Qubits based on quantum dots have excellent prospects for scalable quantum technology due to their inherent compatibility with standard semiconductor manufacturing. While early on it was recognized that holes may offer a multitude of…
Semiconductor spin qubits have emerged as a promising platform for quantum computing, following a significant improvement in their control fidelities over recent years. Increasing the qubit count remains challenging, beginning with the…
Recent breakthroughs in the transport spectroscopy of 2-D material quantum-dot platforms have engendered a fervent interest in spin-valley qubits. In this context, Pauli blockades in double quantum dot structures form an important basis for…
We study single electron transport across a single Bi dopant in a Silicon Nanotransistor to assess how the strong hyperfine coupling with the Bi nuclear spin $I=9/2$ affects the transport characteristics of the device. In the sequential…
We report the realization of an array of four tunnel coupled quantum dots in the single electron regime, which is the first required step toward a scalable solid state spin qubit architecture. We achieve an efficient tunability of the…
One of the main advantages of silicon spin qubits over other solid-state qubits is their inherent scalability and compatibility with the 300 mm CMOS fabrication technology that is already widely used in the semiconductor industry, whilst…
Recent experimental observations of current blockades in 2-D material quantum-dot platforms have opened new avenues for spin and valley-qubit processing. Motivated by experimental results, we construct a model capturing the delicate…
We propose a novel scheme to efficiently polarize and manipulate the electron spin in a quantum dot. This scheme is based on the spin-orbit interaction and it possesses following advantages: (1) The direction and the strength of the spin…
The highest superconducting transition temperatures in the cuprates are achieved in bilayer and trilayer systems, highlighting the importance of intralayer interactions for high Tc. It has been argued that interlayer hybridization vanishes…
We studied the spin-dependent quantum transport properties using a simple modelling of a Datta-Das spin transistor. We refine previous results by accounting the propagation medium changes of opacity felt by itinerant electrons, when the…
Holes confined in quantum dots have gained considerable interest in the past few years due to their potential as spin qubits. Here we demonstrate double quantum dot devices in Ge hut wires. Low temperature transport measurements reveal…
Silicon spin qubits are among the most promising candidates for large scale quantum computers, due to their excellent coherence and compatibility with CMOS technology for upscaling. Advanced industrial CMOS process flows allow wafer-scale…
Qubits based on transistor-like Si MOS nanodevices are promising for quantum computing. In this work, we demonstrate a double quantum dot spin qubit that is all-electrically controlled without the need for any external components, like…
Quantum fluctuations in quasi-one-dimensional superconducting channels leading to spontaneous changes of the phase of the order parameter by $2\pi$, alternatively called quantum phase slips (QPS), manifest themselves as the finite…
Fast and high-fidelity quantum state detection is essential for building robust spin-based quantum information processing platforms in semiconductors. The Pauli spin blockade (PSB)-based spin-to-charge conversion and its variants are widely…
A nanodevice capable of separating spins of two electrons confined in a quantum dot formed in a gated semiconductor nanowire is proposed. Two electrons confined initially in a single quantum dot in the singlet state are transformed into the…
We provide an atomistic tight-binding description of a few carriers confined in ambipolar (n-p) double quantum dots defined in a semiconducting carbon nanotube. We focus our attention on the charge state of the system in which Pauli…
In semiconductor nanostructures, spin blockade (SB) is the most scalable mechanism for electrical spin readout, requiring only two bound spins for its implementation. In conjunction with charge sensing techniques, SB has led to…
We experimentally study the transport features of electrons in a spin-diode structure consisting of a single semiconductor quantum dot (QD) weakly coupled to one nonmagnetic (NM) and one ferromagnetic (FM) lead, in which the QD has an…