Related papers: Pauli spin blockade in CMOS double quantum dot dev…
We propose two potentially practical schemes to carry out two-qubit quantum gates on endohedral fullerenes $N@C_{60}$ or $P@C_{60}$. The qubits are stored in electronic spin degrees of freedom of the doped atom $N$ or $P$. By means of the…
Coulomb interactions strongly influence the spectrum and the wave functions of few electrons or holes confined in a quantum dot. In particular, when the confinement potential is not too strong, the Coulomb repulsion triggers the formation…
We report electron transport measurements of a silicon double dot formed in multi-gated metal-oxide-semiconductor structures with a 15-nm-thick silicon-on-insulator layer. Tunable tunnel coupling enables us to observe an excitation spectrum…
We perform an excited state spectroscopy analysis of a silicon corner dot in a nanowire field-effect transistor to assess the electric field tunability of the valley splitting. First, we demonstrate a back-gate-controlled transition between…
Controlling electron spins in double quantum dots allows individual electrons to be trapped and manipulated for next-generation solid-state qubit devices. In this paper, the study analyzes spin relaxation due to deformation potentials of…
Future universal quantum computers solving problems of practical relevance are expected to require at least $10^6$ qubits, which is a massive scale-up from the present numbers of less than 50 qubits operated together. Out of the different…
We present an experimental study of the fluctuations of Coulomb blockade peak positions of a quantum dot. The dot is defined by patterning the two-dimensional electron gas of a silicon MOSFET structure using stacked gates. This permits…
Spin splitting in p-type semiconductor nanowires is strongly affected by the interplay between quantum confinement and spin-orbit coupling in the valence band. The latter's particular importance is revealed in our systematic theoretical…
In a device with a superconductor coupled to two parallel quantum dots (QDs) the electrical tunability of the QD levels can be used to exploit non-classical current correlations due to the splitting of Cooper pairs. We experimentally…
We present low temperature charge sensing measurements of nanoscale phosphorus-implanted double-dots in silicon. The implanted phosphorus forms two 50 nm diameter islands with source and drain leads, which are separated from each other by…
Constructing a quantum computer capable of broad and important applications is likely to require millions of addressable physical qubits, posing the challenge of large-scale integration of quantum systems with classical electronics. Fully…
We implement a technique for measuring the singlet-triplet energy splitting responsible for spin-to-charge conversion in semiconductor quantum dots. This method, which requires fast, single-shot charge measurement, reliably extracts an…
We demonstrate that transport spectroscopy of single molecular magnets shows signatures of quantum tunneling at low temperatures. We find current and noise oscillations as function of bias voltage due to a weak violation of spin selection…
Holes in silicon quantum dots are receiving significant attention due to their potential as fast, tunable, and scalable qubits in semiconductor quantum circuits. Despite this, challenges remain in this material system including difficulties…
Spin qubits offer one of the most promising routes to the implementation of quantum computers. Very recent results in semiconductor quantum dots show that electrically-controlled gating schemes are particularly well-suited for the…
The spin of an electron confined in semiconductor quantum dots is currently a promising candidate for quantum bit (qubit) implementations. Taking advantage of existing CMOS integration technologies, such devices can offer a platform for…
Valley splitting is a key figure of silicon-based spin qubits. Quantum dots in Si/SiGe heterostructures reportedly suffer from a relatively low valley splitting, limiting the operation temperature and the scalability of such qubit devices.…
Scalable architectures for quantum computing using semiconductor quantum dots require interactions between qubits beyond adjacent quantum dots. Here, we propose using nanowires of electrons to mediate the interaction between two quantum…
Two-electron charged self-assembled quantum dot molecules exhibit a decoherence-avoiding singlet-triplet qubit subspace and an efficient spin-photon interface. Here, we demonstrate that the cycling transitions originating from auxiliary…
A simple model for the transmission of pairs of electrons through a weak electric link in the form of a nanowire made of a material with strong electron spin-orbit interaction (SOI) is presented, with emphasis on the effects of Coulomb…