Related papers: Selection Rules for Non-Radiative Carrier Relaxati…
The interplay between the illuminated excitation of carriers and subsequent thermalization and recombination leads to the formation of non-equilibrium distributions for the "hot" carriers and to heating of both electrons, holes and phonons.…
We theoretically study the relaxation of electron orbital states of a double quantum dot system due to two-phonon processes. In particular, we calculate how the relaxation rates depend on the separation distance between the quantum dots,…
Superconductors like other solids cannot relax instantaneously from excited states to thermodynamic equilibrium. In this paper, relaxation from thermal excitations is investigated, like after absorption of radiation or, under conductor…
We present a femtosecond time-resolved optical spectroscopy (TRS) as an experimental tool to probe the changes in the low energy electronic density of states as a result of short and long range charge density wave order. In these…
Knowing the characteristic relaxation time of free electrons in a dense plasma is crucial to our understanding of plasma equilibration and transport. However, experimental investigations of electron relaxation dynamics have been hindered by…
We describe how a local non-equilibrium nuclear polarisation can be generated and detected by electrical means in a semiconductor quantum point contact device. We show that measurements of the nuclear spin relaxation rate will provide clear…
Controlling the relaxation dynamics of excitons is key to improving the efficiencies of semiconductor--based applications. Confined semiconductor nanocrystals (NCs) offer additional handles to control the properties of excitons, for…
We report detailed studies of the slow relaxation of the photoinduced excess charge carriers in organic metal-insulator-semiconductor field effect transistors consisting of poly(3-hexylthiophene) as the active layer. The relaxation process…
We investigate theoretically a nuclear excitation mechanism involving absorption of non-resonant photons leveraged by the coupling to the atomic shell. The nuclear non-resonant photoexcitation is assisted by electron recombination which…
Many superconducting qubit systems use the dispersive interaction between the qubit and a coupled harmonic resonator to perform quantum state measurement. Previous works have found that such measurements can induce state transitions in the…
Collective decays of multiply-excited atoms become subradiant and bound in space when they are strongly coupled to the guided modes in an atom-waveguide interface. In this interface, we analyze their average density-density and modified…
Lattice vibrations of point defects are essential for understanding non-radiative electron and hole capture in semiconductors as they govern properties including persistent photoconductivity and Shockley-Read-Hall recombination rate.…
Recent results of meson photo-production at the existing electron machines with polarized real photon beams and the measurement of polarization observables of the final state baryons have provided high precision data that led to the…
We propose a time-resolved optical measurement scheme for sampling transient charge and spin currents in a bulk centrosymmetric semiconductor. The technique relies on emission of second harmonic light triggered by a pulsed below-gap optical…
Direct measurements of photoexcited carrier dynamics in nickel are made using few-femtosecond extreme ultraviolet (XUV) transient absorption spectroscopy at the nickel M$_{2,3}$ edge. It is observed that the core-level absorption lineshape…
We characterize the operation of semiconductor microring lasers in an excitable regime. Our experiments reveal a statistical distribution of the characteristics of noise-triggered optical pulses that is not observed in other excitable…
Ramsey interferometry is a widely used tool for precisely measuring transition frequencies between two energy levels of a quantum system, with applications in time-keeping, precision spectroscopy, quantum optics, and quantum information.…
Using ultrafast optical pump-probe spectroscopy, we have measured carrier relaxation times in epitaxial graphene layers grown on SiC wafers. We find two distinct time scales associated with the relaxation of nonequilibrium photogenerated…
Carrier relaxation due to both optical and nonradiative intraband transitions in silicon quantum dots in SiO$_2$ has been considered. Interaction of confined holes with optical phonons has been studied. The Huang-Rhys factor is calculated…
The intensity noise of a laser source represents one of the key factors limiting the ultimate sensitivity in laser-based systems for sensing and telecommunication. For advanced applications based on interferometry, the availability of a…