Related papers: Optical Characterization of PtSi/Si by Spectroscop…
Poly(3,4-ethylenedioxythiophene) : poly(styrene sulfonic acid (PEDOT:PSS), an optically transparent organic semi-conductor, constitutes a suspension of conducting PEDOT:PSS grains, shelled by an insulating layer of PSS. While a percolation…
The present work is essentially focused on the study of optical and structural properties of hydrogenated amorphous silicon thin films (a-Si:H) prepared by radio-frequency cathodic sputtering. We examine separately the influence of hydrogen…
Particle image (PI) overlap presents a significant challenge in single-camera particle tracking and sizing techniques such as Defocusing Particle Tracking Velocimetry (DPTV) and Interferometric Particle Imaging (IPI). In DPTV, overlap…
The dependence of the structure of a phospholipid layer (DSPC and SOPC) adsorbed on a hydrosol substrate on the concentration of NaOH in a solution of 5-nm silica particles has been studied by X-ray reflectrometry with the use of…
In this work, we have demonstrated a novel method to increase the electro-optic interaction in an intensity modulator at the C-band by optimizing the growth methodology of PZT with the metal (Ti/Pt) as a base material and the PZT poling…
This paper describes an experimental setup that has been developed to measure and characterise properties of Silicon Photomultipliers (SiPM). The measured SiPM properties are of general interest for a multitude of potential applications and…
Thin Ge layers deposited on Si(105) form a stable single-domain film structure with large terraces and rebonded-step surface termination, thus realizing an extended and ordered Ge/Si planar hetero-junction. At the coverage of four Ge…
We report the implementation of a fully on-chip, lensless microscopy technique termed optofluidic ptychography. This imaging modality complements the miniaturization provided by microfluidics and allows the integration of ptychographic…
Numerous applications in the extreme field science are possible with circularly polarized high peak power ultrashort pulses. Commonly used quarter wave plates are not applicable here, while multi-mirror schemes are very complicated. We…
Historically, the design of hybrid solar photovoltaic thermal (PVT) systems has focused on cooling crystalline silicon (c-Si)-based photovoltaic (PV) devices to avoid temperature-related losses. This approach neglects the associated…
Bi2Se3 is a prototypical topological insulator which has a small band gap (~0.3 eV) and topologically protected conducting surface states. This material exhibits quite strong thermoelectric effects. Here we show in a mechanically exfoliated…
We report a new approach for monolithic integration of III-V materials into silicon, based on selective area growth and driven by a molten alloy in metal-organic vapor epitaxy. Our method includes elements of both selective area and…
In this work, we perform steady-state continuous wave (cw) photoluminescence (PL) measurements on a MAPbI$_3$ thin film in the temperature range of 10-160 K, using excitation densities spanning over almost seven orders of magnitude, in…
Understanding the physical and chemical processes at the interface of metals and topological insulators is crucial for developing the next generation of topological quantum devices. Here we report the discovery of robust superconductivity…
The semiconducting half Heusler compound YPtSb was predicted theoretically to be capable of changing into topological insulator under proper strain. In this work, p type semiconducting half-Heusler YPtSb thin films were prepared by…
We examine the interactions between polyelectrolytes (PEs) and uncharged substrates at conditions corresponding to a dielectric discontinuity between the aqueous solution and the substrate. To this end, we vary the relevant system…
We propose a setup enabling electron energy loss spectroscopy to determine the density of the electrons accumulated by an electro-positive dielectric in contact with a plasma. It is based on a two-layer structure inserted into a recess of…
Experiments have been conducted in the DIII-D tokamak to explore the in-situ growth of silicon-rich layers as a potential technique for real-time replenishment of surface coatings on plasma-facing components (PFCs) during steady-state…
The stability of a metal thin films on a dielectric substrate is conditioned by the magnitude of the interactive forces at the interface. In the case of a non-reactive interface and weak adhesion, the minimization of free surface energy…
A modified model of metal-semiconductor contacts is applied to analyze the capacitance-voltage and current-voltage characteristics of metal-ferroelectric-metal structures. The ferroelectric polarization is considered as a sheet of surface…