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Related papers: Quantum decoherence dynamics of divacancy spins in…

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Qubits, the quantum mechanical bits required for quantum computing, must retain their fragile quantum states over long periods of time. In many types of electron spin qubits, the primary source of decoherence is the interaction between the…

Mesoscale and Nanoscale Physics · Physics 2010-05-18 Hendrik Bluhm , Sandra Foletti , Izhar Neder , Mark Rudner , Diana Mahalu , Vladimir Umansky , Amir Yacoby

In this paper, we study the electron spin decoherence of single defects in silicon carbide (SiC) nuclear spin bath. We find that, although the natural abundance of $^{29}\rm{Si}$ ($p_{\rm{Si}}=4.7\%$) is about 4 times larger than that of…

Mesoscale and Nanoscale Physics · Physics 2015-01-09 Li-Ping Yang , Christian Burk , Mattias Widmann , Sang-Yun Lee , Jörg Wrachtrup , Nan Zhao

Silicon is undoubtedly one of the most promising semiconductor materials for spin-based information processing devices. Its highly advanced fabrication technology facilitates the transition from individual devices to large-scale processors,…

The elimination of defects from SiC has facilitated its move to the forefront of the optoelectronics and power-electronics industries. Nonetheless, because the electronic states of SiC defects can have sharp optical and spin transitions,…

Silicon is promising for spin-based quantum computation because nuclear spins, a source of magnetic noise, may be eliminated through isotopic enrichment. Long spin decoherence times, $T_2$, have been measured in isotope-enriched silicon but…

Mesoscale and Nanoscale Physics · Physics 2010-10-29 Wayne M. Witzel , Malcolm S. Carroll , Andrea Morello , Lukasz Cywinski , S. Das Sarma

Decoherence largely limits the physical realization of qubits and its mitigation is critical to quantum science. Here, we construct a robust qubit embedded in a decoherence-protected subspace, obtained by hybridizing an applied microwave…

Magnetic fluctuations caused by the nuclear spins of a host crystal are often the leading source of decoherence for many types of solid-state spin qubit. In group-IV materials, the spin-bearing nuclei are sufficiently rare that it is…

Integrating solid-state spin defects into classical electronic devices can enable new opportunities for quantum information processing that benefit from existing semiconductor technology. We show, through bias control of an isotopically…

Despite the importance of isotopically purified samples in current experiments, there have been few corresponding studies of spin qubit decoherence using full quantum bath calculations. Isotopic purification eliminates the well-studied…

Quantum Physics · Physics 2016-01-06 J. E. Lang , R. Guichard , S. J. Balian , T. S. Monteiro

We report NMR experiments using high-power, RF decoupling techniques to show that a 29-Si nuclear spin qubit in a solid silicon crystal at room temperature can preserve quantum phase for 10^9 precessional periods. The coherence times we…

Quantum Physics · Physics 2007-05-23 T. D. Ladd , D. Maryenko , E. Abe , K. M. Itoh , Y. Yamamoto

We theoretically consider coherence times for spins in two quantum computer architectures, where the qubit is the spin of an electron bound to a P donor impurity in Si or within a GaAs quantum dot. We show that low temperature decoherence…

Mesoscale and Nanoscale Physics · Physics 2009-11-07 Rogerio de Sousa , S. Das Sarma

Divacancy spins in silicon carbide implement qubits with outstanding characteristics and capabilities in an industrial semiconductor host. On the other hand, there are still numerous open questions about the physics of divacancy point…

Mesoscale and Nanoscale Physics · Physics 2021-09-29 Oscar Bulancea Lindvall , Nguyen Tien Son , Igor A. Abrikosov , Viktor Ivády

We demonstrate that silicon carbide (SiC) with natural isotope abundance can preserve a coherent spin superposition in silicon vacancies over unexpectedly long time approaching 0.1 seconds. The spin-locked subspace with drastically reduced…

Materials Science · Physics 2017-04-12 D. Simin , H. Kraus , A. Sperlich , T. Ohshima , G. V. Astakhov , V. Dyakonov

Understanding and protecting the coherence of individual quantum systems is a central challenge in quantum science and technology. Over the last decades, a rich variety of methods to extend coherence have been developed. A complementary…

The loss of information about the relative phase between two quantum states, known as decoherence, strongly limits resolution in electron paramagnetic spectroscopy and hampers the use of molecules for quantum information processing. At low…

Quantum Physics · Physics 2025-04-28 Conor Ryan , Valerio Briganti , Cathal Hogan , Mark O'Neill , Alessandro Lunghi

A prerequisite for exploiting spins for quantum data storage and processing is long spin coherence times. Phosphorus dopants in silicon (Si:P) have been favoured as hosts for such spins because of measured electron spin coherence times (T2)…

Erbium-doped solids are prime candidates for optical quantum communication networks due to erbium's telecom C-band emission. A long-lived electron spin of erbium with millisecond coherence time is highly desirable for establishing…

Quantum Physics · Physics 2023-10-16 Shobhit Gupta , Xuntao Wu , Haitao Zhang , Jun Yang , Tian Zhong

Progress with quantum technology has for a large part been realized with the nitrogen-vacancy centre in diamond. Part of its properties, however, are nonideal and this drives research into other spin-active crystal defects. Several of these…

Coherence time is an essential parameter for quantum sensing, quantum information, and quantum computation. In this work, we demonstrate electron spin coherence times as long as 0.1 s for an ensemble of rubidium atoms trapped in a solid…

Atomic Physics · Physics 2020-07-22 Sunil Upadhyay , Ugne Dargyte , David Patterson , Jonathan D. Weinstein

Silicon spin qubits offer long coherence times, a compact footprint and compatibility with industrial CMOS manufacturing. Here, we investigate spin qubits hosted in quantum dots fabricated in a state-of-the-art 300 mm nanoelectronics…

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