Related papers: P-Type Tunnel FETs With Triple Heterojunctions
Ultrascaled GaSe field effect transistors are investigated through ab initio calculations. GaSe monolayers, 3 nm long, exhibit excellent performance with reduced short-channel effects and considerable high ON-current. Such device…
We investigated current-voltage characteristics of unshunted and externally shunted Josephson junctions (JJs) with high critical current densities, Jc, in order to extract their basic parameters and statistical characteristics for JJ…
Thermoelectric effects in metals are typically small due to the nearly-perfect particle-hole (PH) symmetry around their Fermi surface [1, 2]. Despite being initially considered paradoxical [3], thermophase effects [4-8] and linear…
We investigate the spin-dependent transport of GaMnAs-based magnetic tunnel junctions (MTJs) containing a paramagnetic AlMnAs barrier with various thicknesses. The barrier height of AlMnAs with respect to the Fermi level of GaMnAs is…
Ramp-type junctions of $\rm Au-Bi_2Se_3-NbN$ were prepared on top of a bottom gate comprised of a $\rm SrTiO_3$ gate-insulator film on $\rm NbN$ gate-electrode layer on (100) $\rm SrTiO_3$ wafer. Two wafers with gate-insulator thickness of…
Superconductor qubits typically use aluminum-aluminum oxide tunnel junctions to provide the non-linear inductance. Junctions with semiconductor barriers make it possible to vary the superconductor material and explore beyond aluminum. We…
Hybrid Superconductor/Ferromagnet structures have been investigated recently to address the interplay between ferromagnetism and superconductivity. They also open up new routes for the investigation of out of equilibrium superconductivity.…
We investigate the transport of holes through $AlAs/In_{.10}Ga_{.90}As$ resonant tunneling diodes which utilize $In_xGa_{1-x}As$ prewells in the emitter with $x=0,.10,$ and $.20$. The data show an increase in peak current and bias at…
We present the first principle calculations of the electrical properties of graphene sheet/h-BN heterojunction(GS/h-BN) and 11-armchair graphene nanoribbon heterojunction(11-AGNR/h-BN), which were carried out using the density functional…
We observe resonant tunneling in silicon split gate point contacts implanted with antimony and defined in a self-aligned poly-silicon double gate enhancement mode Si-MOS device structure. We identify which resonances are likely candidates…
The high-Q harmonic oscillator mode of a Josephson junction can be used as a novel probe of spurious two-level systems (TLSs) inside the amorphous oxide tunnel barriers of the junction. In particular, we show that spectroscopic transmission…
In this work, quantum ballistic simulation study of a III-V tri-gate MOSFET has been presented. At the same time, effects of device parameter variation on ballistic, subthrshold and short channel performance is observed and presented. The…
Probabilistic computers offer promising solutions for computationally hard problems in domains such as combinatorial optimization and machine learning. A key building block in these systems is the probabilistic bit (p-bit), which relies on…
We carefully investigate three important effects including postgrowth activation annealing, delta ({\delta}) dose and p+-GaN layer thickness and experimentally demonstrate their influence on the electrical properties of GaN p-n homojunction…
Superconducting junctions with a ferromagnet as the weak link, where triplet correlations can transport supercurrents over a substantial distance, have been of long-standing interest. In this work, we study the triplet transport in planar…
Tunneling field-effect transistors (TFETs) based on 2D materials are promising steep sub-threshold swing (SS) devices due to their tight gate control. There are two major methods to create the tunnel junction in these 2D TFETs: electrical…
Qubits on solid state devices could potentially provide the rapid control necessary for developing scalable quantum information processors. Materials innovation and design breakthroughs have increased functionality and coherence of qubits…
The performance of various superconducting devices operating at ultra-low temperatures is impaired by the presence of non-equilibrium quasiparticles. Inelastic quasiparticle (QP) tunneling across Josephson junctions in superconducting…
This work reports the demonstration of lateral p-NiOx/p-GaN/n-GaN-based super-heterojunction (SHJ) diodes using p-GaN with additional sputtered p-type nickel oxide (NiOx) layers to realize charge-balanced structures. The heterojunction…
The type I superconductor lead (Pb) has been theoretically predicted to be a two-band superconductor. We use scanning tunneling spectroscopy (STS) to resolve two superconducting gaps with an energy difference of 150$\,\mu$eV. Tunneling into…