Related papers: Proving Nontrivial Topology of Pure Bismuth by Qua…
Bismuth has been the key element in the discovery and development of topological insulator materials. Previous theoretical studies indicated that Bi is topologically trivial and it can transform into the topological phase by alloying with…
Using high-resolution angle-resolved photoemission spectroscopy, the electronic structure near the Fermi level and the topological property of the Bi(111) films grown on the Bi$_2$Te$_3$(111) substrate were studied. Very different from the…
While first-principles calculations with different levels of sophistication predict a topologically trivial $Z_2$ state for bulk bismuth, some photoemission experiments show surface states consistent with the interpretation of bismuth being…
Recent high-resolution angle-resolved photoemission spectroscopy experiments have given a reason to believe that pure bismuth is topologically non-trivial semimetal. We derive an analytic theory of surface and size-quantized states of Dirac…
We have investigated the structures and electronic properties of ultra-thin Bi(110) films grown on an s-wave superconductor substrate using low-temperature scanning tunneling microscopy and spectroscopy. Remarkably, our experimental results…
Bismuth-chalchogenides are model examples of three-dimensional topological insulators. Their ideal bulk-truncated surface hosts a single spin-helical surface state, which is the simplest possible surface electronic structure allowed by…
The passivation of thin Bi(1 1 1) films with hydrogen and oxide capping layers is investigated from first principles. Considering termination-related changes of the crystal structure, we show how the bands and density of states are…
Recently, there have been intense efforts in searching for new topological insulator (TI) materials. Based on first-principles calculations, we find that all the ultrathin Bi (111) films are characterized by a nontrivial Z2 number…
Recent experiments suggest that Bi impurities segregate to form bilayer films on Ni and Cu grain boundaries but do not segregate in Fe. To explain these phenomena, we study the total energies of Bi films on transition metal (TM)…
A recent experiment(Bollmann11) suggested that bismuth forms hexagonal close packed (HCP) films on the Ni(111) surface, of heights 3, 5 and 7 layers. A quantum size effect based on free electrons was proposed in explanation. To test this…
Quantum transport measurements including the Altshuler-Aronov-Spivak (AAS) and Aharonov-Bohm (AB) effects, universal conductance fluctuations (UCF), and weak anti-localization (WAL) have been carried out on epitaxial Bi thin films ($10-70$…
The topological characteristics of Bi and its alloys with Sb have fueled intense debate since the prediction of three-dimensional topological insulators. However, a definitive resolution has not been reached to date. Here, we provide…
Bismuth (Bi) films hold potential for spintronic devices and topological one-dimensional edge transport. Large-area high-quality (111) Bi ultrathin films are grown on InSb (111)B substrates. Strong film-substrate interactions epitaxially…
By using first-principles plane wave calculations, we systematically study the electronic properties of the thin film of antimony in (111) orientation. Considering the spin-orbit interaction, for stoichiometric surface, the topological…
We report on fabrication of a two-dimensional topological insulator-Bi(111) bilayer on Sb nanofilms via a sequential molecular beam epitaxy (MBE) growth technique. Our angle-resolved photoemission measurements demonstrate the evolution of…
By combining transport and photo emission measurements on (Bi1-xInx)2Se3 thin films, we report that this system transforms from a topologically non-trivial metal into a topologically trivial band insulator through three quantum phase…
The electrical conductance of molecular beam epitaxial Bi on BaF2(111) was measured as a function of both film thickness (4-540 nm) and temperature (5-300 K). Unlike bulk Bi as a prototype semimetal, the Bi thin films up to 90 nm are found…
In an ideal 3D topological insulator (TI), the bulk is insulating and the surface conducting due to the existence of metallic states that are localized on the surface; these are the topological surface states. Quaternary Bi-based compounds…
We discuss and compare two different types of confinement in bilayer graphene by top and bottom gating with symmetrical microelectrodes. Trivial confinement corresponds to the same polarity of all top gates, which is opposed to that of all…
We performed angle-resolved photoelectron spectroscopy of the Bi(111) surface to demonstrate that this surface support edge states of non-trivial topology. Along the $\bar{\Gamma}\bar{M}$-direction of the surface Brillouin zone, a…