Related papers: Theory of valley-dependent transport in graphene-b…
We show that the optical excitation of graphene with polarized light leads to the pure valley current where carriers in the valleys counterflow. The current in each valley originates from asymmetry of optical transitions and electron…
In this paper, we study the quantum properties of a bilayer graphene with (asymmetry) line defects. The localized states are found around the line defects. Thus, the line defects on one certain layer of the bilayer graphene can lead to an…
We theoretically study the transport properties of both monolayer and bilayer graphene in the presence of electron-hole puddles induced by charged impurities which are invariably present in the graphene environment. We calculate the…
We investigate the electronic confinement in bilayer graphene by topological loops of different shapes. These loops are created by lateral gates acting via gap inversion on the two graphene sheets. For large-area loops the spectrum is well…
2D materials based superlattices have emerged as a promising platform to modulate band structure and its symmetries. In particular, moir\'e periodicity in twisted graphene systems produces flat Chern bands. The recent observation of…
Electronic and transport properties of bilayer heterostructure under light irradiation are of fundamental interest to improve functionality of optoelectronic devices. We theoretically study the modification of transport properties of…
We investigate bilayer graphene systems with layer switching domain walls separating the two energetically equivalent Bernal stackings in the presence of an external magnetic field. To this end we calculate quantum transport and local…
Theory predicts that the application of an electric field breaks the inversion symmetry of AB and BA stacked domains in twisted bilayer graphene, resulting in the formation of a triangular network of one-dimensional valley-protected helical…
Graphene bilayer systems are known to exhibit a band gap when the layer symmetry is broken, by applying a perpendicular electric field. The resulting band structure resembles that of a conventional semiconductor with a parabolic dispersion.…
An analysis of electron transport in graphene is presented in the presence of various arrangement of delta-function like magnetic barriers. The motion through one such barrier gives an unusual non specular refraction leading to asymmetric…
Valley magnetic moments play a crucial role in valleytronics in 2D hexagonal materials. Traditionally, based on studies of quantum states in homogeneous bulks, it is widely believed that only materials with broken structural inversion…
Analytical treatments of tunneling in bilayer graphene have typically relied on minimal models including only the vertical interlayer hopping $\gamma_1$ and have been restricted to the weak interlayer bias regime $2\varepsilon \ll…
With its two degenerate valleys at the Fermi level, the band structure of graphene provides the opportunity to develop unconventional electronic applications. Herein, we show that electron and hole quasiparticles in graphene can be filtered…
Valley-contrasting Hall transport conventionally relies on the inversion symmetry breaking in two-dimensional systems, which greatly limits the selection range of valley materials. In particular, while monolayer transition metal…
Elastic deformations of graphene can significantly change the flow paths and valley polarization of the electric currents. We investigate these phenomena in graphene nanoribbons with localized out-of-plane deformations by means of…
We develop a theory of the valley Hall effect in high-quality graphene samples, in which strain fluctuation-induced random gauge potentials have been suggested as the dominant source of disorder. We find a near-quantized value of valley…
We study the quantum valley Hall effect and related domain wall modes in twisted bilayer graphene at a large commensurate angle. Due to the quantum valley and sub-valley Hall effect, a small deviation from the commensurate angle generates…
Bilayer graphene (BLG) with a tunable bandgap appears interesting as an alternative to graphene for practical applications, thus its transport properties are being actively pursued. Using density functional theory and perturbation analysis,…
A tight binding model is used to calculate the band structure of bilayer graphene in the presence of a potential difference between the layers that opens a gap $\Delta$ between the conduction and valence bands. In particular, a self…
It is shown that potential barriers in bilayer graphene (BLG) and monolayer transition metal dichalcogenides (TMDs) can split a valley unpolarized incident current into reflected and transmitted currents with opposite valley polarization.…