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Related papers: Band gap engineering of MoS$_2$ upon compression

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Molybdenum disulfide (MoS$_2$) is a high-potential material for nanoelectronic applications, especially when thinned to a few layers. Liquid phase exfoliation enables large-scale fabrication of thin films comprising single- and few-layer…

Materials Science · Physics 2024-11-19 Alireza Ghasemifard , Agnieszka Kuc , Thomas Heine

Recently emerging large-area single-layer MoS2 grown by chemical vapor deposition has triggered great interest due to its exciting potential for applications in advanced electronic and optoelectronic devices. Unlike gapless graphene, MoS2…

Molybdenum disulfide (MoS$_2$), a layered van der Waals material, has attracted considerable attention as a promising alternative to graphene for applications in field-effect transistors and nanophotonic devices because of its sizable band…

Materials Science · Physics 2026-04-16 Shunsuke Hirai , Ibuki Terada , Michi-To Suzuki

Single-layer MoS2 is a direct-gap semiconductor whose electronic band structure strongly depends on the strain applied to its crystal lattice. While uniaxial strain can be easily applied in a controlled way, e.g., by bending of a flexible…

Mesoscale and Nanoscale Physics · Physics 2015-10-01 G. Plechinger , A. Castellanos-Gomez , M. Buscema , H. S. J. van der Zant , G. A. Steele , A. Kuc , T. Heine , C. Schüller , T. Korn

Single layers of transition metal dichalcogenides such as MoS$_2$ are direct bandgap semiconductors with optical and electronic properties distinct from multilayers due to strong vertical confinement. Despite the fundamental monolayer limit…

Mesoscale and Nanoscale Physics · Physics 2017-09-14 Guohua Wei , Erik J. Lenferink , David A. Czaplewski , Nathaniel P. Stern

In light of the rise of transition metal dichalcogenides as 2D semiconductors for device applications, band engineering becomes very important from an application point of view. In many of these materials, such as the canonical example of…

Materials Science · Physics 2026-05-14 Maciej Bazarnik , Thorsten Deilmann , Marta Przychodnia , Anika Schlenhoff

Wrinkles and nanobubbles are an integral and often unavoidable part of integrating 2D van der Waals semiconductors into actual device architectures. Despite their ubiquitous nature, quantitative correlation between such spatially…

Materials Science · Physics 2026-04-01 Soumyadip Hazra , Sraboni Dey , Arijit Kayal , Narendra Shah , Renjith Nadarajan , Joy Mitra

Molybdenum disulfide (MoS2) is a particularly interesting member of the family of two-dimensional (2D) materials due to its semiconducting and tunable electronic properties. Currently, the most reliable method for obtaining high-quality…

Strain can efficiently modulate the bandgap and carrier mobilities in two-dimensional (2D) materials. Conventional mechanical strain-application methodologies that rely on flexible, patterned or nano-indented substrates are severely limited…

We characterize the electronic structure and elasticity of monolayer transition-metal dichalcogenides MX2 (M=Mo, W, Sn, Hf and X=S, Se, Te) with 2H and 1T structures using fully relativistic first principles calculations based on density…

Materials Science · Physics 2015-06-18 David M. Guzman , Alejandro Strachan

Two-dimensional (2D) transition metal dichalcogenides (TMDs) such as molybdenum disulfide (MoS2) have been intensively investigated because of their exclusive physical properties for advanced electronics and optoelectronics. In the present…

The quasiparticle (QP) band structures of both strainless and strained monolayer MoS$_{2}$ are investigated using more accurate many body perturbation \emph{GW} theory and maximally localized Wannier functions (MLWFs) approach. By solving…

Materials Science · Physics 2013-04-10 Hongliang Shi , Hui Pan , Yong-Wei Zhang , Boris I. Yakobson

{\it Ab initio} density functional theory calculations are performed to investigate the electronic structure of MoS$_2$ armchair nanoribbons in the presence of an external static electric field. Such nanoribbons, which are nonmagnetic and…

Mesoscale and Nanoscale Physics · Physics 2013-08-29 Kapildeb Dolui , Chaitanya Das Pemmaraju , Stefano Sanvito

The strain-induced magnetism is observed in single-layer MoS2 with atomic single vacancies from density functional calculations. Calculated magnetic moment is no less than 2muB per vacancy defect. The straininduced band gap closure is…

Materials Science · Physics 2014-03-04 Peng Tao , Huaihong Guo , Teng Yang , Zhidong Zhang

Strain engineering is an important method for tuning the properties of semiconductors and has been used to improve the mobility of silicon transistors for several decades. Recently, theoretical studies have predicted that strain can also…

Materials Science · Physics 2022-10-07 Isha M. Datye , Alwin Daus , Ryan W. Grady , Kevin Brenner , Sam Vaziri , Eric Pop

Semiconducting 2D materials, such as transition metal dichalcogenides (TMDs), are emerging in nanomechanics, optoelectronics, and thermal transport. In each of these fields, perfect control over 2D material properties including strain,…

Controlled variation of the electronic properties of 2D materials by applying strain has emerged as a promising way to design materials for customized applications. Using first principles density functional theory calculations, we show that…

Materials Science · Physics 2015-09-22 Babu Ram , Aaditya Manjanath , Abhishek K. Singh

We investigate the effect of mechanical strain on the dynamics of thin $\mathrm{MoS_2}$ nanodrum resonators. Using a piezoelectric crystal, compressive and tensile biaxial strain is induced in initially flat and buckled devices. In the flat…

Mesoscale and Nanoscale Physics · Physics 2015-09-11 E. Kramer , D. J. J. van Dorp , R. van Leeuwen , W. J. Venstra

Geometrical confinement effect in exfoliated sheets of layered materials leads to significant evolution of energy dispersion with decreasing layer thickness. Molybdenum disulphide (MoS2) was recently found to exhibit indirect to direct gap…

Materials Science · Physics 2014-03-13 Weijie Zhao , Zohreh Ghorannevis , Leiqiang Chua , Minglin Toh , Christian Kloc , Ping-Heng Tan , Goki Eda

The possibility of tailoring the critical strain of 2D materials will be crucial for the fabrication of flexible devices. In this paper, the fracture in polycrystalline MoS2 films with two different grain orientations is studied at the…

Applied Physics · Physics 2019-12-03 M. Sledzinska , G. Jumbert , M. Placidi , A. Arrighi , P. Xiao , F. Alzina , C. M. Sotomayor Torres