Related papers: Monolithic AlGaAs second-harmonic nanoantennas
The ability to generate phase-stabilised trains of ultrafast laser pulses by mode-locking underpins photonics research in fields such as precision metrology and spectroscopy. However, the complexity of conventional mode-locked laser…
Second and third harmonic generation in the opaque region of a GaAs wafer is experimentally observed both in transmission and reflection. These harmonic components can propagate through an opaque material as long as the pump is tuned to a…
Nonlinear optical effects have been studied extensively in microresonators as more photonics applications transition to integrated on-chip platforms. Due to low optical losses and small mode volumes, microresonators are demonstrably the…
Second-harmonic generation allows for coherently bridging distant regions of the optical spectrum, with applications ranging from laser technology to self-referencing of frequency combs. However, accessing the nonlinear response of a medium…
We demonstrate post-fabrication target-wavelength trimming with a gallium phosphide on silicon nitride integrated photonic platform using controlled electron-beam exposure of hydrogen silsesquioxane cladding. A linear relationship between…
Achieving high conversion efficiencies in second-order nonlinear optical processes is a key challenge in integrated photonics for both classical and quantum applications. This paper presents the first demonstration of Transverse…
A uniform array of single-grain Au nanodots, as small as 5-8 nm, can be formed on silicon using e-beam lithography. The as-fabricated nanodots are amorphous, and thermal annealing converts them to pure Au single crystals covered with a thin…
Gallium arsenide optical resonators have been identified as platforms for light-matter interactions ranging from optomechanics to quantum electrodynamics involving nonlinear optics. Here, we present a 5-mm-diameter whispering gallery mode…
The development of integrated photonic circuits utilizing gallium phosphide requires a robust, scalable process for fabrication of GaP-on-insulator devices. Here we present the first GaP photonic devices on SiO$_2$. The process exploits…
We present the first experimental demonstration of zero backscattering from nanoparticles at op- tical frequencies as originally discussed by Kerker et. al. [M. Kerker, D. Wang, and C. Giles, J. Opt. Soc. A 73, 765 (1983)]. GaAs pillars…
Plasmonic double helical antennas are a means to funnel circularly polarized light down to the nanoscale. Here, an existing design tool for single helices is extended to the case of double helices and used to design antennas that combine…
We present high-reflectivity substrate-transferred single-crystal GaAs/AlGaAs interference coatings at a center wavelength of 4.54 um with record-low excess optical loss below 10 parts per million. These high-performance mirrors are…
We demonstrate a chip-integrated semiconductor source that combines polarization and frequency entanglement, allowing the generation of entangled biphoton states in a hybrid degree of freedom without postmanipulation. Our AlGaAs device is…
High-index Mie-resonant dielectric nanostructures provide a new framework to manipulate light at the nanoscale. In particular their local field confinement together with their inherently low losses at frequencies below their band-gap energy…
Second-harmonic generation (SHG) is a second-order nonlinear optical process that is not allowed in media with inversion sym-metry. However, due to the broken symmetry at the surface, surface SHG still occurs, but is generally small. We…
Integrated thin-film lithium niobate platform has recently emerged as a promising candidate for next-generation, high-efficiency wavelength conversion systems that allow dense packaging and mass-production. Here we demonstrate efficient,…
Using pulsed laser ablation with arsenic over pressure, the growth conditions for GaAs nanowires have been systematically investigated and optimized. Arsenic over pressure with As$_2$ molecules was introduced to the system by thermal…
We have studied on optical second harmonic generations (SHGs) from atomically thin MoTe2 flakes with 2H and 1T' phases. From 2H-MoTe2 samples with odd (even) numbers of layers, strong (negligible) SHGs are observed due to the…
We report the design of GaAs-based monolithic valley phononic crystals (VPnCs) with multiple complete phononic bandgaps, which support simultaneous valley-protected edge states with different symmetries in the gigahertz (GHz) range.…
In this Letter, we report the observation of electroluminescence (EL) at around 866 nm from n-i-n unipolar (electron-transporting) III-V GaAs nanoLEDs. The devices consist of nanopillars with top diameter of 166 nm, arranged in a 10x10…