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The spin-orbit interaction (SOI) of the two-dimensional hole gas in the inversion symmetric semiconductor Ge is studied in a strained-Ge/SiGe quantum well structure. We observed weak anti-localization (WAL) in the magnetoconductivity…

Spin-orbit interaction (SOI) is a fundamental component for electrically driven spin qubits and hybrid superconducting-semiconducting systems. In particular, Rashba SOI (RSOI) is a key mechanism enabling all-electrical spin manipulation…

Mesoscale and Nanoscale Physics · Physics 2025-06-18 Patrick Del Vecchio , Stefano Bosco , Daniel Loss , Oussama Moutanabbir

Spin-orbit interaction in semiconductor structures with broken space inversion symmetry leads to spin splitting of electron and hole states even in the absence of magnetic field. We discover that, beyond the Rashba and Dresselhaus…

Mesoscale and Nanoscale Physics · Physics 2022-04-20 G. V. Budkin , S. A. Tarasenko

The structural inversion asymmetry-induced spin-orbit interaction of conduction band electrons in zinc-blende and wurtzite semiconductor structures is analysed allowing for a three-dimensional (3D) character of the external electric field…

Materials Science · Physics 2010-12-30 Eduard Takhtamirov , Roderick V. N. Melnik

Semiconductor Rashba nanowires are quasi-one dimensional systems that have large spin-orbit (SO) coupling arising from a broken inversion symmetry due to an external electric field. There exist parametrized multiband models that can…

Mesoscale and Nanoscale Physics · Physics 2020-08-25 Samuel D. Escribano , Alfredo Levy Yeyati , Elsa Prada

We propose a spin transistor using only non-magnetic materials that exploits the characteristics of bulk inversion asymmetry (BIA) in (110) symmetric quantum wells. We show that extremely large spin splittings due to BIA are possible in…

Materials Science · Physics 2009-11-10 K. C. Hall , Wayne H. Lau , K. Gundogdu , Michael E. Flatte , Thomas F. Boggess

We report the effect of the insertion of an InP/In$_{0.53}$Ga$_{47}$As Interface on Rashba spin-orbit interaction in In$_{0.52}$Al$_{0.48}$As/In$_{0.53}$Ga$_{0.47}$As quantum wells. A small spin split-off energy in InP produces a very…

Mesoscale and Nanoscale Physics · Physics 2009-11-10 Y. Lin , T. Koga , J. Nitta

This research investigates the implication of spin-orbit interaction (SOI) and symmetry on the band topology and spin texture at the (001) surface of BiInO$_3$. Using density functional theory (DFT) and symmetry analysis, the study explores…

Materials Science · Physics 2025-06-27 Ramsamoj Kewat , Nirmal Ganguli

Recently, we have found an additional spin-orbit (SO) interaction in quantum wells with two subbands [Phys. Rev. Lett. 99, 076603 (2007)]. This new SO term is non-zero even in symmetric geometries, as it arises from the intersubband…

Mesoscale and Nanoscale Physics · Physics 2008-10-20 Rafael S. Calsaverini , Esmerindo Bernardes , J. Carlos Egues , Daniel Loss

The Rashba effect, which plays a crucial role in fundamental materials physics and potential spintronics applications, has been engineered in diverse systems, including semiconductor quantum wells, oxide heterostructures, metallic surfaces,…

One-body mechanisms of spin splitting of the energy spectrum of 2D electrons in a one-side doped (001) GaAs/Al$_x$Ga$_{1-x}$As quantum well have been studied theoretically and experimentally. The interfacial spin splitting has been shown to…

Mesoscale and Nanoscale Physics · Physics 2014-10-10 Zh. A. Devizorova , A. V. Shchepetilnikov , Yu. A. Nefyodov , V. A. Volkov , I. V. Kukushkin

Spin-orbit interaction (SOI) in low-dimensional systems, namely Rashba systems and the edge states of topological materials, is extensively studied in this decade as a promising source to realize various fascinating spintronic phenomena,…

We study the effect of valence band spin-orbit interactions on the acoustic phonon assisted spin relaxation of holes confined in quantum dots. Heavy hole-light hole (hh-lh) mixing and all the spin-orbit terms arising from zinc-blende bulk…

Mesoscale and Nanoscale Physics · Physics 2013-09-09 Juan I. Climente , Carlos Segarra , Josep Planelles

We evaluate the distribution of Hall conductances in magnetic subbands of two-dimensional electron gas with Rashba spin-orbit (SO) coupling placed in a periodic potential and perpendicular magnetic field. In this semiconductor structure the…

Mesoscale and Nanoscale Physics · Physics 2009-11-13 V. Ya. Demikhovskii , A. A. Perov

The manipulation of Rashba-type spin-orbit coupling (SOC) in molecular beam epitaxy-grown Al$_x$In$_{1-x}$Sb/InSb/CdTe quantum well heterostructures is reported. The effective band bending provides robust two-dimensional quantum…

Spin-orbit interaction is investigated in a dual gated InAs/GaSb quantum well. Using an electric field the quantum well can be tuned between a single carrier regime with exclusively electrons as carriers and a two-carriers regime where…

We study the spin-orbit interaction (SOI) in InAs/ GaSb and InAs quantum wells. We show through temperature- and gate-dependent magnetotransport measurements of weak antilocalization that the dominant spin-orbit relaxation mechanism in our…

Mesoscale and Nanoscale Physics · Physics 2017-04-19 F. Herling , C. Morrison , C. S. Knox , S. Zhang , O. Newell , M. Myronov , E. H. Linfield , C. H. Marrows

We report the direct observation of interband spin-orbit (SO) coupling in a two-dimensional (2D) surface electron system, in addition to the anticipated Rashba spin splitting. Using angle-resolved photoemission experiments and…

Mesoscale and Nanoscale Physics · Physics 2015-06-04 Hendrik Bentmann , Samir Abdelouahed , Mattia Mulazzi , Juergen Henk , Friedrich Reinert

We investigate the relationship between the Zeeman interaction and the inversion asymmetry induced spin orbit interactions (Rashba and Dresselhaus SOIs) in GaAs hole quantum point contacts. The presence of a strong SOI results in crossing…

Mesoscale and Nanoscale Physics · Physics 2017-04-12 A. Srinivasan , D. S. Miserev , K. L. Hudson , O. Klochan , K. Muraki , Y. Hirayama , D. Reuter , A. D. Wieck , O. P. Sushkov , A. R. Hamilton

We have developed an 8-band Effective Mass Approximation model that describes the zero field spin splitting in the band structure of zincblende heterostructures due to bulk inversion asymmetry (BIA). We have verified that our finite…

Mesoscale and Nanoscale Physics · Physics 2007-05-23 X. Cartoixa , D. Z. -Y. Ting , T. C. McGill
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