Related papers: Thickness dependent interlayer transport in vertic…
Stacking two-dimensional van der Waals (vdW) materials rotated with respect to each other show versatility for the study of exotic quantum phenomena. Especially, anisotropic layered materials have great potential for such twistronics…
Single layers of transition metal dichalcogenides such as MoS$_2$ are direct bandgap semiconductors with optical and electronic properties distinct from multilayers due to strong vertical confinement. Despite the fundamental monolayer limit…
The discovery of the first high critical temperature (Tc) transition metal diboride superconductor, MgB2 structure alpha-MoB2 under pressure with Tc up to 32 K at 100 GPa, provides new input into some unexplained aspects of electron-phonon…
Rich dielectric properties in atomic transition metal dichalcogenides (TMDs) enhance light-matter interactions and contribute to a variety of optical phenomena. The direct transfer of TMDs onto photonic crystals facilitates optical field…
Two-dimensional (2D) transition metal dichalcogenides (TMDs) such as molybdenum disulfide (MoS2) have been intensively investigated because of their exclusive physical properties for advanced electronics and optoelectronics. In the present…
Superconducting quantum circuits provide a versatile platform for studying quantum materials by leveraging precise microwave control and utilizing the tools of circuit quantum electrodynamics (QED). Hybrid circuit devices incorporating…
MoTe2 is the least explored material in the Molybdenum-chalcogen family, which crystallizes in thermodynamically stable semiconducting 2H phase at \textless 500 C and 1T' metallic phase at higher temperatures. Molecular beam epitaxy (MBE)…
Structural, interfacial, optical, and transport properties of large-area MoS2 ultra-thin films on BN-buffered silicon substrates fabricated using magnetron sputtering are investigated. A relatively simple growth strategy is demonstrated…
Over the last few years, ReS2 has generated a myriad of unattended queries regarding its structure, the concomitant thickness dependent electronic properties and apparently contrasting experimental optical response. In this work, with…
Recent studies showed that the in-plane and inter-plane thermal conductivities of two-dimensional (2D) MoS2 are low, posing a significant challenge in heat management in MoS2-based electronic devices. To address this challenge, we design…
One important use of layered semiconductors such as molybdenum disulfide (MoS2) could be in making novel heterojunction devices leading to functionalities unachievable using conventional semiconductors. Here we demonstrate an ultrafast…
Monolayer transition metal dichalcogenides (e.g., MoS2) exhibit exceptionally large optical nonlinearities for high-order nonlinear light generation (NLG), yet their inherent atomic thickness fundamentally limits light-matter interactions…
Topological superconductors are appealing building blocks for robust and reliable quantum information processing. Most platforms for engineering topological superconductivity rely on a combination of superconductors, materials with…
A strained and undoped HgTe layer is a three-dimensional topological insulator, in which electronic transport occurs dominantly through its surface states. In this Letter, we present transport measurements on HgTe-based Josephson junctions…
The optical properties of the iron-chalcogenide superconductor K{0.8}Fe{2-y}Se2, with a critical temperature Tc = 31 K, have been measured over a wide frequency range in the a-b planes above and below Tc. The conductivity is incoherent at…
Van der Waals heterostructures provide a versatile platform for tailoring electronic properties through the integration of two-dimensional materials. Among these combinations, the interaction between bilayer graphene and transition metal…
MoTe2 is a Weyl semimetal, which exhibits unique non-saturating magnetoresistance and strongly reinforced superconductivity under pressure. Here, we demonstrate that a novel mesoscopic superconductivity at ambient pressure arises on the…
Monolayers of transition metal dichalcogenides are semiconducting materials which offer many prospects in optoelectronics. A monolayer of molybdenum disulfide (MoS2) has a direct bandgap of 1.88 eV. Hence, when excited with optical photon…
Developing novel techniques for depositing transition metal dichalcogenides is crucial for the industrial adoption of 2D materials in optoelectronics. In this work, the lateral growth of molybdenum disulfide (MoS2) over an insulating…
The atomic-scale determination of hydrogen positions in MoSH monolayers remains experimentally challenging, and existing studies are confined to Janus-type configurations. Here, we combine high-throughput structural screening with…